Structure and properties of silicon oxide films deposited in a dual microwave-rf plasma reactor

Thin plasma-polymerized layers of hexamethyldisiloxane for humidity sensor development

“…These values are slightly higher than 1.456 observed on nonporous silicon oxide but they are comparable with those reported for thin films deposited from pure HMDSO induced remote plasma [28]. The high values of the refractive indexes have been attributed to the presence of Si-H bonding groups in the layer and/or to the increase in carbon content [29]. Since the peak ratio of the CH x absorbance does not vary significantly (Table 1), we may think that the high values of the refractive index could be attributed to the presence of Si-H bonding groups.…”

“…9) showed that the increase in the discharge power induced a decease in the silanols group's proportion (Si-OH), due to hydrogen desorption and the increase of the Si-H peak intensity ( Table 2). The decrease of Si-OH groups and the increase of Si-H bonding groups, suggest a decrease in the film porosity and an increase in the film density [29]. Fig.…”

“…From these observations, we may believe that the potential interference of the PPHMDSO humidity sensor with other polar analytes is negligible and should not have any major effects on the results reported in the present work. Chemical analysis also revealed that the increase of polymerization time enhances the formation of the methyl radicals (CH 3 ) and the hydroxyl groups (Si-OH) may be replaced by Si-H [29]. The replacement of the hydroxyl groups by Si-H leads to the film densification [30].…”

Oxygen passivation of silicon nanocrystals: Influences on trap states, electron mobility, and hybrid solar cell performance

“…The FTIR spectrum of fresh Si NCs is shown in Figure 1a. Peaks around 668 cm À 1 and 2360 cm À 1 are assigned to CO 2 physisorbed during measurement, which does not influence particle properties and will be excluded from the following discussions [42]. The weak peak around 825 cm À 1 is related to Si-OH absorption [43].…”

Basic characteristics of the a-SiOC∶H thin films prepared by PE CVD

“…We can see a decreasing intensity of peaks related to Si-O-C 2 H 5 groups compared to the monomer spectrum. Newly increased absorption bands were assigned to the OH groups 3700÷3200 cm −1 [9], [10], [5], O 3 Si-H stretching at 2235 and 875 cm −1 [6], [11] Si-H, SiH 2 twist and bending at 800 cm −1 [5] and carbonyl stretching around 1710 cm −1 [5], [12], [13]. …”