“…According to the inductively coupled plasma optical emission spectroscopy analysis, the purity of metallurgical silicon is about 99.4%, and the contents of impurity elements are 3658, 2175, 298, 25, and 11 ppm for Fe, Al, Ca, P, and B, respectively. Considering the high concentration of the impurities in metallurgical silicon, it can be regarded as a heavily P-doped polysilicon, and the minor carrier mobility μ n in the highly doped region was restricted around 10 1 to 10 2 cm/V s. ,,, The minor carrier lifetime τ n derived from transient photoluminescence spectra as 1.09 ns was measured as shown in Figure .…”