2018
DOI: 10.1007/s12633-017-9751-6
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Structure and Properties of Metallurgical-grade Silicon

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Cited by 9 publications
(5 citation statements)
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“…Carbon and high purity quartz react in the electric arc furnace at temperatures as high as 2,000 • C. The received metallurgical Si can be widely used in alloy metallurgy, semiconductor industry and organosilicone chemical engineering. The higher purity electro-grade and solar-grade Si ingots can be obtained by the modified Siemens method or Czochralski method (Kawado et al, 1986;Yoshikawa and Morita, 2012;Zhilkashinova et al, 2018). Nanostructured Si, especially porous Si and Si nanowires can be produced by etching Si wafers in an HF or alkaline solution.…”
Section: Preparation Methods Of Silicon-based Negative Electrode Matementioning
confidence: 99%
“…Carbon and high purity quartz react in the electric arc furnace at temperatures as high as 2,000 • C. The received metallurgical Si can be widely used in alloy metallurgy, semiconductor industry and organosilicone chemical engineering. The higher purity electro-grade and solar-grade Si ingots can be obtained by the modified Siemens method or Czochralski method (Kawado et al, 1986;Yoshikawa and Morita, 2012;Zhilkashinova et al, 2018). Nanostructured Si, especially porous Si and Si nanowires can be produced by etching Si wafers in an HF or alkaline solution.…”
Section: Preparation Methods Of Silicon-based Negative Electrode Matementioning
confidence: 99%
“…In order to select reinforcing and liquid-phase additives for SiC ceramic sintering, it is necessary to select the optimal ratio, amount and calculate the eutectic of impurities promoting ceramic sintering at a temperature of 1800 °C in a weakly reducing CO atmosphere. The significant affinity of aluminum for oxygen, as well as the cubic lattice of the synthesized yttrium aluminum garnet, make it possible to prevent the carbidization of the complex oxide up to a temperature of 2040 °C [22][23][24][25]. Metals that form oxides of the cubic system have the highest affinity for oxygen.…”
Section: Resultsmentioning
confidence: 99%
“…According to the inductively coupled plasma optical emission spectroscopy analysis, the purity of metallurgical silicon is about 99.4%, and the contents of impurity elements are 3658, 2175, 298, 25, and 11 ppm for Fe, Al, Ca, P, and B, respectively. Considering the high concentration of the impurities in metallurgical silicon, it can be regarded as a heavily P-doped polysilicon, and the minor carrier mobility μ n in the highly doped region was restricted around 10 1 to 10 2 cm/V s. ,,, The minor carrier lifetime τ n derived from transient photoluminescence spectra as 1.09 ns was measured as shown in Figure .…”
Section: Resultsmentioning
confidence: 99%
“…In that aspect, metallurgical silicon should be the better material. However, the impurity content in metallurgical silicon is more than 1%, which introduces defects and recombination centers up to 10 21 cm –3 and significantly deteriorates the electrical properties of silicon including conductivity, carrier mobility, minor carrier lifetime, and so on. , Because of the limited electrical properties of metallurgical silicon, which is known as an electronically dead material, purification and refinement are needed for further utilization . The complex purification step required high energy consumption, which is neither economically feasible nor environment-friendly.…”
Section: Introductionmentioning
confidence: 99%