Structure and physical properties of plasma-grown amorphous hydrogenated carbon films

Couderc, P; Catherine, Y.

doi:10.1016/0040-6090(87)90343-9

Cited by 255 publications

(61 citation statements)

References 26 publications

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“…The profilometer was also used to measure the degree of bending of the silicon substrate, induced by the stress in the deposited films. From the bending radius, the thickness and Young's modulus of the substrate, the compressive stress within the deposited film was calculated by a conventional formula 21 • The density of the films was determined from the measured mass of. the film and its volume.…”

Section: Film C-haracterizationmentioning

confidence: 99%

Formation of hydrogenated amorphous carbon films of controlled hardness from a methane plasma

et al. 1990

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Section: Film C-haracterizationmentioning

confidence: 99%

Formation of hydrogenated amorphous carbon films of controlled hardness from a methane plasma

et al. 1990

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“…Then the structureless transmission losses (due to light scattering and absorption at the surface and in the bulk of the specimen) were fitted in the range of 2600 to 3300 cm ±1 using an appropriate (second or third order) polynom approximation. The concentration of carbon±hydrogen groups was in the range of 50 to 1000 ppm as estimated from the integral intensity of CH x stretching mode vibrations in the IR spectra according to [10]. The oscillator strength was assumed to be independent of hybridization.…”

Section: Ir Absorptionmentioning

confidence: 99%

“…3 (sample #C-86), where integral intensities of all CH x bands, and separately of the 2820 cm ±1 band are given as a function of annealing temperature. The intensities are re-calculated to absolute concentrations (ppm) according to [10]. There is a little or no evolution of hydrogen up to 1000 C, then an increment of CH x content 40 A. Khomich et al 3.…”

Section: Ir Absorptionmentioning

confidence: 99%

Optical Properties and Defect Structure of CVD Diamond Films Annealed at 900-1600 �C

Хомич

Ralchenko²,

Nistor

et al. 2000

phys. stat. sol. (a)

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Optical absorption evolution is studied for 150±800 mm thick diamond films grown by microwave plasma enhanced CVD technique and annealed in vacuum at temperatures 900±1600 C. A noticeable internal degradation (darkening) of the films takes place at T > 1300 C. Changes in the concentration of different CH x groups are revealed from the IR spectra starting at T > 1000 C. Up to 25% of the total amount of hydrogen in as-grown films is found to be unbonded. An interesting effect of reduced absorption in UV range due to the formation of new C±H bonds by reaction of primarily unbonded hydrogen is observed. The diamond darkening correlating with the bonded hydrogen loss process, is ascribed to the appearance of a graphite-like phase (being under a high stress) presumably at grain boundaries, that is revealed by the appearance of a specific absorption peak in UV spectra.

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“…Other C-H absorption bands are associated with CH (olefinic), CH (aromatic) and CH 2 (olefinic) stretching modes at 3025, 3060 and 3080 cm -1 respectively. For these modes, H atoms are bonded to sp 2 -type carbon [34,35]. Figure 3 shows the curve fittings of stretching mode absorption bands.…”

Section: Experimental Methodsmentioning

confidence: 99%

Effects of discharge voltage on the characteristics of a-C:H films prepared by H-assisted Plasma CVD method

Dong

Koga

Yamashita

et al. 2015

Trans. Mat. Res. Soc. Japan

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Hydrogen bonding configurations and hydrogen content of a-C:H films deposited by H-assisted plasma CVD were investigated by Fourier transform infrared spectroscopy. Plasma parameters related to deposition rate were derived using optical emission spectroscopy. The a-C:H films contain a large number of sp 3 configurations (93%) and a few sp 2 configurations (7%). Most of the hydrogen is bonded in methyl groups which shows the structure of deposited a-C:H films is polymer-like carbon. The mass density has nearly linear decreases with increasing the hydrogen atom density, indicating that control of hydrogen content is crucial to obtain a-C:H films of high mass density. A slight increase in radical generation rate and significant increases in etching rate by hydrogen atoms lead to decrease the deposition rate when the discharge voltage increases from 170 V to 180 V.

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Structure and physical properties of plasma-grown amorphous hydrogenated carbon films

Cited by 255 publications

References 26 publications

Formation of hydrogenated amorphous carbon films of controlled hardness from a methane plasma

Formation of hydrogenated amorphous carbon films of controlled hardness from a methane plasma

Optical Properties and Defect Structure of CVD Diamond Films Annealed at 900-1600 �C

Effects of discharge voltage on the characteristics of a-C:H films prepared by H-assisted Plasma CVD method

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