2019
DOI: 10.1007/s10854-018-00626-w
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Structure and optoelectronic properties of AZO/Al/AZO tri-layer films grown on flexible substrates

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Cited by 7 publications
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“…Its success is mainly due to its lateral conductivity improvement as well as its good optical and surface passivation properties [ 15 ]. Moreover, it has a direct wide bandgap of 3.37 eV and a large exciton binding energy of ~60 meV [ 16 ]. It is also mechanically resistant [ 17 ], exhibits an intrinsic n-type behavior due to crystal defects and allows heavy doping [ 18 ], in addition to being abundant, inexpensive and non-toxic [ 19 ].…”
Section: Introductionmentioning
confidence: 99%
“…Its success is mainly due to its lateral conductivity improvement as well as its good optical and surface passivation properties [ 15 ]. Moreover, it has a direct wide bandgap of 3.37 eV and a large exciton binding energy of ~60 meV [ 16 ]. It is also mechanically resistant [ 17 ], exhibits an intrinsic n-type behavior due to crystal defects and allows heavy doping [ 18 ], in addition to being abundant, inexpensive and non-toxic [ 19 ].…”
Section: Introductionmentioning
confidence: 99%