Structure and lattice dynamics of nonmagnetic defective AIIBIII2XIV4 compounds and alloys

Razzetti, C.; Lottici, Pier Paolo; Antonioli, G.

doi:10.1016/0146-3535(87)90009-8

Cited by 24 publications

(21 citation statements)

References 76 publications

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“…[1][2][3][4] In particular, ZnGa 2 Se 4 has a high photosensitivity and strong luminescence, 2 can be used for phase change memories, 5 and has been proposed as a candidate for electronic device applications forming part of heterojunction diodes. 6 The properties of ZnGa 2 Se 4 have been characterized by x-ray diffraction (XRD), 7,8 neutron and electron diffraction, [9][10][11][12] extended x-ray absorption fine structure, 13 infrared (IR), 14,15 Raman spectroscopy, [15][16][17][18][19][20][21][22][23][24] and magnetic 25 measurements. To this respect, while some authors claim that ZnGa 2 Se 4 crystallizes in the tetragonal ordered defect chalcopyrite (DC) structure with space group (SG) I-4 [see Fig.…”

Section: Introductionmentioning

confidence: 99%

High-pressure Raman scattering study of defect chalcopyrite and defect stannite ZnGa2Se4

Vilaplana

Gomis

Pérez-González

et al. 2013

Journal of Applied Physics

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High-pressure Raman scattering measurements have been carried out in ZnGa 2 Se 4 for both tetragonal defect chalcopyrite and defect stannite structures. Experimental results have been compared with theoretical lattice dynamics ab initio calculations and confirm that both phases exhibit different Raman-active phonons with slightly different pressure dependence. A pressure-induced phase transition to a Raman-inactive phase occurs for both phases; however, the sample with defect chalcopyrite structure requires slightly higher pressures than the sample with defect stannite structure to fully transform into the Raman-inactive phase. On downstroke, the Raman-inactive phase transforms into a phase that could be attributed to a disordered zincblende structure for both original phases; however, the sample with original defect chalcopyrite structure compressed just above 20 GPa, where the transformation to the Raman-inactive phase is not completed, returns on downstroke mainly to its original structure but shows a new peak that does not correspond to the defect chalcopyrite phase. The pressure dependence of the Raman spectra with this new peak and those of the disordered zincblende phase is also reported and discussed. V C 2013 AIP Publishing LLC.

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Section: Introductionmentioning

confidence: 99%

High-pressure Raman scattering study of defect chalcopyrite and defect stannite ZnGa2Se4

Vilaplana

Gomis

Pérez-González

et al. 2013

Journal of Applied Physics

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“…Different degrees of cation disorder can also be found in this compound. A rather accurate structure determination of CdIn 2 Se 4 with electron microscopy revealed that different degrees of order or different structures coexist within this compond [11], as shown in Fig. 1.3.…”

Section: Fig 11 Grimm-sommerfeld Splitting Diagram For Tetrahedral mentioning

confidence: 92%

“…As concerns A II B III 2 X VI 4 compounds, according to the number of octahedral ( ) and tetrahedral (τ) cationic sites, one has spinel (2 + 1 τ), layered (l + 2 τ) and tetragonal structures (3 τ) as shown in Fig. 1.4 [11,15].…”

Section: Fig 11 Grimm-sommerfeld Splitting Diagram For Tetrahedral mentioning

confidence: 99%

“…In the system Cd(Ga x In 1−x ) 2 Se 4 the order-disorder transition temperature is a function of composition and the order collapse is tied to the disordering of the vacancy sublattice which leads to a disordered sphalerite structure [11,14], as shown by the phase diagram of this alloy system ( Fig. 1.6).…”

Section: Fig 11 Grimm-sommerfeld Splitting Diagram For Tetrahedral mentioning

confidence: 99%

“…By introducing vacancies into the Grimm-Sommerfeld splitting procedure, one may obtain different defective structures containing one or more vacancy per unit cell [11].…”

Section: Fig 11 Grimm-sommerfeld Splitting Diagram For Tetrahedral mentioning

confidence: 99%

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Relation of $$\mathrm{A}^{\mathrm{II}}\mathrm{B}^{\mathrm{III}}_{2}\mathrm{X}^{\mathrm{VI}}_{4}$$ Compounds to Other Materials, Their Properties and Applications (Instead of Introduction)

Ursaki

Tiginyanu

2014

Pressure-Induced Phase Transitions in AB2X4 Chalcogenide Compounds

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This chapter provides a review of A II B III 2 X VI 4 compounds as a class of materials in a wide family of ternary compounds. The origin and the place of these materials in the hierarchy of ternary compounds are presented. The technological methods for the growth of these compounds are analyzed and the procedures for obtaining larger crystals for practical applications are evidenced. The crystal structure and the energy band structure are discussed in terms of the production of spinel, layered, or tetragonal structure according to the number of octahedral and tetrahedral cationic sites. The "ordered-vacancy compounds" are analyzed taking into account different degrees of possible disorder. The relationship of the electronic band structures of these compounds with the band structure of their parent chalcopyrite compounds A I B III X VI 2 and their grand parent A II B VI compounds is clarified. The influence of the crystallographic structure upon the energy band structure is evidenced by comparing crystal modifications with different space groups. Optical, radiative, and vibrational properties are discussed and the energy level scheme explaining the extrinsic optical properties of A II B III 2 X VI 4 semiconductors is presented. It is shown that a source of interest in A II B III 2 X VI 4 compounds is their crystal structures derived from the diamond type, but modified to accommodate three or more atoms of different sizes, allowing additional symmetries and thus an increase in the selection of electro-optic, acousto-optic, and non-linear materials for device applications. Another source of interest related to the variety of A II B III 2 X VI 4 crystal structures comes from their importance for the investigation of the role of structure and composition in a response to the applied pressure.

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Defective Pseudoternary Alloys The CdGa2Se4-CdIn2Se4 System

Razzetti

Besagni²,

Bini

et al. 1989

Phys. Stat. Sol. (a)

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Crystalline samples of the alloy Cd(Ga1−xInx)2Se4 are synthesized and the lattice parameters are determined by X‐ray diffraction. A complete solubility is obtained in the whole composition range, but for intermediate compounds a discontinuity in the lattice parameters is observed. This fact should indicate that a phase transition from the I4 structure of CdGa2Se4 to the I42m structure of CdIn2Se4 takes place through a disordered intermediate phase.

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Structure and lattice dynamics of nonmagnetic defective AIIBIII2XIV4 compounds and alloys

Cited by 24 publications

References 76 publications

High-pressure Raman scattering study of defect chalcopyrite and defect stannite ZnGa2Se4

High-pressure Raman scattering study of defect chalcopyrite and defect stannite ZnGa2Se4

Relation of $$\mathrm{A}^{\mathrm{II}}\mathrm{B}^{\mathrm{III}}_{2}\mathrm{X}^{\mathrm{VI}}_{4}$$ Compounds to Other Materials, Their Properties and Applications (Instead of Introduction)

Defective Pseudoternary Alloys The CdGa2Se4-CdIn2Se4 System

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