1986
DOI: 10.1103/physrevb.33.3657
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Structure and growth of crystalline superlattices: From monolayer to superlattice

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Cited by 633 publications
(282 citation statements)
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“…If heteroepitaxial growth takes place close to equilibrium conditions, the growth mode depends on the surface free energies of the substrate γ s and the film γ f as well as on the interfacial energy γ i,n [263]. The interfacial energy γ i,n depends on the specific chemical interaction between film and substrate atoms at the interface.…”
Section: Discussionmentioning
confidence: 99%
“…If heteroepitaxial growth takes place close to equilibrium conditions, the growth mode depends on the surface free energies of the substrate γ s and the film γ f as well as on the interfacial energy γ i,n [263]. The interfacial energy γ i,n depends on the specific chemical interaction between film and substrate atoms at the interface.…”
Section: Discussionmentioning
confidence: 99%
“…[7] As a result, the deposition speed increased and island growth became dominant, leading to a porous structure of the film. [8][9][10] It could be shown that an elevated substrate temperature compensated this effect in part, but leading to a lower deposition speed. However, these films were characterized by high internal tension causing reduced substrate adhesion.…”
Section: Introductionmentioning
confidence: 99%
“…[6] It could be shown that this discharge mode in conjunction with a symmetric mixing of the vaporized precursor with the surrounding cylindrically rotating plasma at the outlet of the capillary leads to a significantly enhanced homogeneity of the profile and chemical composition of the deposited films as compared to a plasma jet with irregular discharge filaments. [6] SiO x films with exceptionally low carbon content and a high degree of cross-linkage could be deposited using OMCTS [octamethylcyclotetrasiloxane, Si 4 8 ]. An experimental study on the influence of the O 2 versus OMCTS concentration on the chemical composition of the films and their radial gradients over the static deposition profile is carried out by means of XPS and ATR-FTIR.…”
Section: Introductionmentioning
confidence: 99%
“…Recently, there has been much interest [1][2][3][4][5][6][7][8][9][10][11][12][13][14] in growth of epitaxial metal films and superlattices due to their unusual physical properties. The quality and structure of these systems is of paramount importance for applications.…”
Section: Introductionmentioning
confidence: 99%