Structure and energy storage performance of lanthanide elements doped AgNbO3 lead-free antiferroelectric ceramics

Synergistic design of a new PbHfO3-based antiferroelectric solid solution with high energy storage and large strain performances under low electric fields

“…In order to further illustrate the advantages of the designed and prepared ceramics in energy storage properties at low electric fields, the W reco of the x = 0.05 ceramic is compared with that of the previously reported representative AFE ceramics, 7,13,15,27–39 as well as other FE/RFE systems, 40–43 as summarized in Fig. 5f.…”

“…The W reco value is improved by about 4.65 J cm −3 (or 118%) in the x = 0.05 ceramic in comparison with that of PHf and its E cr is much lower than that of PHf. 27 In order to further illustrate the advantages of the designed and prepared ceramics in energy storage properties at low electric elds, the W reco of the x = 0.05 ceramic is compared with that of the previously reported representative AFE ceramics, 7,13,15,[27][28][29][30][31][32][33][34][35][36][37][38][39] as well as other FE/RFE systems, [40][41][42][43] as summarized in Fig. 5f.…”

Ultrahigh energy storage performance realized in AgNbO 3-based antiferroelectric materials via multiscale engineering

“…where RA, RB, and RO are the ionic radii of A-site cations, B-site cations and oxygen anion, respectively). AFE phase is favored at t < 1 and FE phase is stabilized at t > 1 [40]. Based on the tolerance factor t as listed in Table 3, the AFE stability of ASN and ASNT MLCCs should be the same and stronger than that of ANT MLCC due to the same ionic radius of Ta 5+ (0.64 Å, CN=6) and Nb 5+ (0.64 Å, CN=6).…”

Enhanced energy storage performance in reaction-sintered AgNbO3 antiferroelectric ceramics

“…in Li-doped AN the ferroelectricity increased when decreasing the t factor. 23 The three most common paths adopted in the literature to achieve mentioned goals are: (1) doping the A site with Yb, 24 Sm, 7,[25][26][27] Lu, 28 Gd, 25,29 Eu, 25 La, 30,31 Tb, 25 Dy, 25 Ho, 25 Er, 25 Tm, 25 Na, 23 Ca, 32 Mn, 20 Nd, 33,34 Bi, 35,36 Ba, 37 Sr, 38 Ce, 39 and the B site with Sb, 40 Hf, 41 Ta, 31,42 W, 20,43 Sc, 36 and Zr. 44,45 (2) Compositing with other dielectric materials such as 0.925Bi 0.5 Na 0.5 TiO 3 -0.075BaTiO 3 , 46 CaZrO 3 , 47 CaTiO 3 , 19 and PVDF.…”