Structure and electrical behavior of silicon nanowires prepared by MACE process

Plugaru, R.; Fakhri, Elham; Romanițan, Cosmin; Mihalache, I.; Crăciun, G.; Plugaru, N.; Árnason, Hákon Örn; Sultan, M. T.; Nemneş, George Alexandru; Ingvarsson, Snorri; Svavarsson, H. G.; Manolescu, Andrei

doi:10.1016/j.surfin.2022.102167

Cited by 7 publications

(3 citation statements)

References 39 publications

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“…Among these methods, MACE is the simplest and most versatile one [26]. It relies on catalyzed etching with assistance from a perforated metal template film (typically gold or silver) [27] or randomly distributed metallic nanoparticles (typically gold or silver) [28,29] spread on the Si-wafer. To date, studies have been focused on using different gas types to apply direct pressure on SiNWs, either single SiNW or arrays of SiNWs [19,30], and have neglected the SiNWs response under isostatic pressure, which creates a load uniformly distributed on the sample surface.…”

Section: Introductionmentioning

confidence: 99%

Piezoresistance Characterization of Silicon Nanowires in Uniaxial and Isostatic Pressure Variation

Fakhri

Plugaru

Sultan

et al. 2022

Sensors

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Silicon nanowires (SiNWs) are known to exhibit a large piezoresistance (PZR) effect, making them suitable for various sensing applications. Here, we report the results of a PZR investigation on randomly distributed and interconnected vertical silicon nanowire arrays as a pressure sensor. The samples were produced from p-type (100) Si wafers using a silver catalyzed top-down etching process. The piezoresistance response of these SiNW arrays was analyzed by measuring their I-V characteristics under applied uniaxial as well as isostatic pressure. The interconnected SiNWs exhibit increased mechanical stability in comparison with separated or periodic nanowires. The repeatability of the fabrication process and statistical distribution of measurements were also tested on several samples from different batches. A sensing resolution down to roughly 1m pressure was observed with uniaxial force application, and more than two orders of magnitude resistance variation were determined for isostatic pressure below atmospheric pressure.

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Section: Introductionmentioning

confidence: 99%

Piezoresistance Characterization of Silicon Nanowires in Uniaxial and Isostatic Pressure Variation

Fakhri

Plugaru

Sultan

et al. 2022

Sensors

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show abstract

“…Silicon nanowires (SiNWs) are part of nanomaterials which play a crucial role; indeed they have a wide range potential applications in the field of optics, electronic components, electronic connectors, sensors, Li-ion battery electrodes and magnetic recording media [1][2][3][4][5]. It is worth to note that SiNws have a wide range of possible applications, whether they are combined or not with other materials by means of various methods.…”

Section: Introductionmentioning

confidence: 99%

Temperature Etching and Metallic Agent Concentration Effect on Structure, Morphology and Wettability of Silicon Nanowires

Lamrani,

Hadjersi,

Amirouche

et al. 2024

JNanoR

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Abstract. Structural, Morphologycal and Wettability of SiliconNanowires (SiNWs) elaborated using Ag assisted electroless chemical etching are investigated. Prior the etching, Ag nanoparticles (AgNPs) were deposited at room temperature in a HF/AgNO3 solution with different concentration of AgNO3. The XRD spectra of the Ag NPs deposit show a good crystallinity. The effects of temperature etching bath and concentrations of AgNO3 on the etching process were examined. The morphological study, performed using a Scanning Electron Microscopy (SEM), shows porous silicon layer of 2µm for the lower temperature etching. For 25°C, perpendicular silicon nanowires about 15µm were formed. For the higher etching temperature (50°C), the silicon nanowire about 50 nm in diameter and 50µm in length were formed. The impact of Ag concentration on the SiNWs formation is examined in the second part of the present work. It is shown that the etching depth decreases as the Ag concentration decreases with values of 2.8 μm and 2 μm for concentrations of 0.025M and 0.0125M, respectively. The hydrophobicity of the samples was monitored by measuring the contact angle between a drop of water and the sample surface. It was established that the morphology is strongly influenced by etching conditions and their wettability changes from superhydrophilic to hydrophobic. FTIR analysis confirms the oxide-free silicon nanowires.

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“…Among these methods, MACE is the simplest and most versatile one. It relies on catalyzed etching with assistance of a perforated metal template film (typically gold or silver) [25] or randomly distributed metallic nanoparticles (typically gold or silver) [26,27] spread on the Si-wafer. To date, studies have been focused on uniaxial load and have neglected the SiNWs response under isostatic pressure, which creates a load uniformly distributed on the sample surface.…”

Section: Introductionmentioning

confidence: 99%

Piezoresistance characterization of silicon nanowires in uniaxial and isostatic pressure variation

Fakhri¹,

Plugaru²,

Sultan³

et al. 2022

Preprint

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Silicon nanowires (SiNWs) are known to exhibit large piezoresistance (PZR) effect, making it suitable for various sensing applications. Here, we report the results of a PZR investigation on randomly distributed and interconnected vertical silicon nanowire arrays as a pressure sensor. The samples were produced from p-type (100) Si wafers using a silver catalysed top-down etching process. The piezoresistance response of these SiNW arrays was analysed by measuring their I-V characteristics under applied uniaxial as well as isostatic pressure. The interconnected SiNWs exhibit increased mechanical stability in comparison with separated or periodic nanowires. The repeatability of the fabrication process and statistical distribution of measurements were also tested on several samples from different batches. A sensing resolution down to roughly 1 mbar pressure was observed with uniaxial force application, and more than two orders of magnitude resistance variation was determined for isostatic pressure below atmospheric pressure.

show abstract

Structure and electrical behavior of silicon nanowires prepared by MACE process

Cited by 7 publications

References 39 publications

Piezoresistance Characterization of Silicon Nanowires in Uniaxial and Isostatic Pressure Variation

Piezoresistance Characterization of Silicon Nanowires in Uniaxial and Isostatic Pressure Variation

Temperature Etching and Metallic Agent Concentration Effect on Structure, Morphology and Wettability of Silicon Nanowires

Piezoresistance characterization of silicon nanowires in uniaxial and isostatic pressure variation

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