2010
DOI: 10.1080/00150193.2010.482459
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Structure and Electric Properties of Sm Doped BaTiO3Ceramics

Abstract: BaTiO 3 ceramics with Sm additions in the range of 1 mol% to 8 mol% were prepared through a solid-state reaction sintering in nitrogen atmosphere. The ceramic structure and morphology, temperature dependences of the dielectric constant and I-V properties were characterized. The results indicated that Sm 3+ ions incorporated into BaTiO 3 inhibited the grain growth and no secondary phases was detected, and the doped samples become semiconductive.

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Cited by 23 publications
(8 citation statements)
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“…, all of the samples have the similar emission and excitation peak patterns, and the peak intensity of 1 D 2 → 3 H 4 transition (602 nm) tends to increase with Pr 3+ concentration, and reaches to their maximum at a definite concentration, subsequently decreases with further increasing Pr contents due to the concentration‐quenching effect. However, the concentration‐quenching effect is varied by different sintering temperature, namely, the intensity of emission reaches the maximum at a lower concentration of Pr 3+ as the sintering temperature increases, which is well understood that the substitution of Pr 3+ into A site in ABO 3 lattice generates an extra positive charge, then the samples at higher temperature (1400°C) and doping content tend to semiconductor, at the same time, we also found that the obtained Pr‐doped samples exhibit black color related to the presence of Ti 3+ as like reported in literatures, the detailed mechanism may be coming from the following: (a) a direct donor‐doping process:. PrBa,CaPrBa,Ca+e, Ti4++eTi3+; (b) the loss of oxygen during high‐temperature sintering: normalO×trueV¨normalO+2e+1/2normalO2.…”
Section: Resultssupporting
confidence: 85%
“…, all of the samples have the similar emission and excitation peak patterns, and the peak intensity of 1 D 2 → 3 H 4 transition (602 nm) tends to increase with Pr 3+ concentration, and reaches to their maximum at a definite concentration, subsequently decreases with further increasing Pr contents due to the concentration‐quenching effect. However, the concentration‐quenching effect is varied by different sintering temperature, namely, the intensity of emission reaches the maximum at a lower concentration of Pr 3+ as the sintering temperature increases, which is well understood that the substitution of Pr 3+ into A site in ABO 3 lattice generates an extra positive charge, then the samples at higher temperature (1400°C) and doping content tend to semiconductor, at the same time, we also found that the obtained Pr‐doped samples exhibit black color related to the presence of Ti 3+ as like reported in literatures, the detailed mechanism may be coming from the following: (a) a direct donor‐doping process:. PrBa,CaPrBa,Ca+e, Ti4++eTi3+; (b) the loss of oxygen during high‐temperature sintering: normalO×trueV¨normalO+2e+1/2normalO2.…”
Section: Resultssupporting
confidence: 85%
“…The replacement of Ba 2+ (1.61 Å) [24] ions by smaller Sm 3+ (1.24 Å) [24] ions caused the contraction of V 0 . It was consistent with the previous report that Sm ions preferentially occupy Ba sites at Ba/Ti < 1 [25]. Tsur et al [26] have also reported that Sm incorporates mainly into Ba sites.…”
Section: Resultssupporting
confidence: 92%
“…It is effective in significantly increasing the dielectric constant of BT ceramics with rare-earth doping (Caballero et al, 2000;Morrison et al, 2001). Sun et al (2010) reported the enhancement of dielectric properties in the Sm doped BT ceramics. Sm doping can inhibit the growth of the crystal grains and make the BT ceramics possess semiconductor characteristics.…”
Section: Rare-earth Doped Bt Ceramicmentioning
confidence: 99%