Structure and dielectric properties of solid solutions Bi7Ti4 + x W x Ta1–2x O21 (x = 0–0.5)

Effects of LiF-Addition on Sintering Behavior and Dielectric Response of LaPO4 Ceramics at Microwave and Terahertz Frequency for LTCC Applications

“…Figure 9 represents the real (ε ) and imaginary (ε ) parts. The scattering of phonons and the overlap of peaks make the real part (ε = 6.83) less than the measured dielectric constant (ε r = 10.04) [37][38][39]. Figure 9c shows the observed dielectric loss (2.16 × 10 −4 ) in the same order of magnitude as the measured dielectric loss (1.72 × 10 −4 ), indicating that phonon vibration affects dielectric loss.…”

Crystal structure and dielectric properties of layered perovskite-like solid solutions Bi3−xGdxTiNbO9 (x=0, 0.1, 0.2, 0.3) with high Curie temperature

“…The Curie temperatures T c of the studied APs increase with a decrease in the unit cell parameters a and b and its volume V and a decrease in parameter c. This dependence is directly related to the correlation between the tolerance-factor and the value of T C characteristic of APs. 19,21 Tolerance factor t was introduced by Goldschmidt 34 as a parameter that determines the ionic packing in cubic cells:…”

“…[12][13][14][15][16] Bi 3 TiNbO 9 (BTNO) with m ¼ 2 that consists of (Bi 2 O 2 ) 2þ layers between which there are (BiTiNbO 7 ) 2À layers is a promising material for fabricating high-temperature piezoelectric sensors because of their very high Curie temperature T C (914-921 ○ C), 5,17 despite the fact that the piezoelectric modulus of BTNO ceramic is fairly low (d 33 < 7 pC/N). 18 Numerous examples [19][20][21][22][23][24][25][26][27][28][29][30][31] showed that replacements of atoms in A and also in B positions of an APs crystal lattice led to the change in the structure, the dielectric properties and significantly influenced the polarization processes in these compounds. In this work, we have synthesized a number of new solid solutions of layered perovskite-like oxides Bi 3Àx Gd x TiNbO 9 (x ¼ 0, 0.1, 0.2, 0.3) in which proportions between amounts of Bi 3þ and Lu 3þ ions entering in position A was varied and have studied their crystal lattices, the dielectric and electrophysical characteristics.…”

The Structural and Dielectric Properties of Bi3−xNdxTi1.5W0.5O9 (x = 0.25, 0.5, 0.75, 1.0)

“…Bi 3 TiNbO 9 (BTNO) with m = 2 that consists of (Bi 2 O 2 ) 2+ layers between which there are (BiTiNbO 7 ) 2layers [26] is a promising material for fabricating high temperature piezoelectric sensors because of their very high Curie temperature T C (914-921 • C) [14,15], despite the fact that the piezoelectric modulus of BTNO ceramic is fairly low (d 33 < 7 pC/N) [27]. Numerous examples [28][29][30][31][32][33][34][35][36][37][38][39][40][41][42] showed that replacements of atoms in Aand also in B-positions of an AP's crystal lattice led to a change in the structure, the dielectric properties and significantly influenced the polarization processes in these compounds.…”