Structure analysis of LaAlO3() surfaces by low energy neutral scattering spectroscopy

Kawanowa, H.; Ozawa, Haruo; Ohtsuki, M.; Gotoh, Y.; Souda, Ryūtarō

doi:10.1016/s0039-6028(01)01802-7

Cited by 34 publications

(23 citation statements)

References 16 publications

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“…24 Since our films are being grown at 700°C, it is thus reasonable to consider the ͑100͒ LAO surface terminated by a La-O plane. In the high temperature range ͑i.e., 400-1000 K͒, the LAO surface is terminated with a La-O layer.…”

Section: B Structural Properties and Epitaxial Relationshipsmentioning

confidence: 99%

Structural, optical, and electrical properties of epitaxial titanium oxide thin films on LaAlO3 substrate

Sbai

Perrière

Gallas

et al. 2008

Journal of Applied Physics

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Articles you may be interested inEffect of SnO2 concentration on the tuning of optical and electrical properties of ZnO-SnO2 composite thin films Electrical and optical properties of transparent conducting In4+xSn3−2xSbxO12 thin films J. Appl. Phys. 110, 033702 (2011); 10.1063/1.3605552Structure-related optical properties of ( Pb , La ) ( Zr , Ti ) O 3 thin films on indium tin oxide∕quartz substrates Titanium oxide thin films were prepared by pulsed-laser deposition on LaAlO 3 single crystal substrate at 700°C. Pure anatase films are obtained at high oxygen pressure ͑10 −1 mbar͒, while the rutile phase is evidenced at low oxygen pressure ͑10 −5 mbar͒ despite a large oxygen deficiency ͑O / Ti= 1.75͒. From asymmetric x-ray diffraction measurements, the in-plane epitaxial relationships be0tween the substrate and the titanium oxide phases are highlighted. Optical constants ͑refractive index n and extinction coefficient k͒ were deduced from ellipsometric measurements. The optical band gap energies of the anatase and rutile films are found to be 3.4 and 3.3 eV, respectively. Since the nearly stoichiometric anatase films are resistive ͑Ͼ10 3 ⍀ cm͒, the large oxygen deficiency in rutile films leads to noticeable increase in the conductivity due to the Ti 3+ species, which supply electrons in the conduction band. At low temperature ͑T Ͻ 200 K͒ the resistivity of rutile films versus temperature may be explained by a variable range hopping mechanism based on both two or three dimensional electron transfer between the Ti 3+ and Ti 4+ species.

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Section: B Structural Properties and Epitaxial Relationshipsmentioning

confidence: 99%

Structural, optical, and electrical properties of epitaxial titanium oxide thin films on LaAlO3 substrate

Sbai

Perrière

Gallas

et al. 2008

Journal of Applied Physics

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“…This surface charge compensation can be achieved, for instance, by desorbing native ions or adsorbing foreign charged entities on the surface [19]. The LAO (001) surface has been extensively studied both theoretically and experimentally [20][21][22][23][24][25][26][27][28][29][30][31][32].…”

Section: Introductionmentioning

confidence: 99%

First-principles study of polar LaAlO (001) surface stabilization by point defects

Seo

Demkov

2011

Phys. Rev. B

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We use density functional theory to investigate the influence of surface vacancies on the surface stability of a stoichiometric free-standing LaAlO 3 (001) thin film. Defect-free three and five unit cell thick LaAlO 3 (001) thin films show macroscopic electric fields of 0.28 V/Å and 0.22 V/Å, respectively. The built-in electric field is sufficiently strong for the five unit cell thick film to undergo a dielectric breakdown in the local density approximation. We show that the electric field can be effectively compensated by La vacancies on the LaO surface, O vacancies on the AlO 2 surface, or both types of vacancy present at the same time. Comparing surface Gibbs free energies we show that several surface vacancy structures are thermodynamically stable.

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“…In the crystalline form, LaAlO 3 is a layered, perovskite-type structure with alternate Al-O 2 and La-O layers comprising the lattice units. [12] LaAlO 3 has been of interest from the crystallographic point of view, [12][13][14] since it may be grown epitaxially on silicon, [15] SrTiO 3 , [16] and other materials. [17,18] The structural compatibility of LaAlO 3 with other multicomponent oxides enables its use as a substrate material in advanced material applications, such as waveguides and spintronics.…”

Section: Introductionmentioning

confidence: 99%

Atomic Layer Deposition and Properties of Lanthanum Oxide and Lanthanum‐Aluminum Oxide Films

Kukli

Ritala

Pore

et al. 2006

Chemical Vapor Deposition

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Atomic layer deposition (ALD) of lanthanum oxide on glass and silicon substrates was examined using lanthanum silylamide, La[N(SiMe 3 ) 2 ] 3 , and water as precursors in the substrate temperature range of 150-250°C. The effect of pulse times and precursor evaporation temperature on the growth rate and refractive index was investigated. The films remained amorphous regardless of the deposition conditions. The resulting La 2 O 3 films contained noticeable amounts of hydrogen and silicon and were chemically unstable while stored in ambient air. Lanthanum aluminum oxide films were achieved with stoichiometry close to that of LaAlO 3 at 225°C from La[N(SiMe 3 ) 2 ] 3 , Al(CH 3 ) 3 , and H 2 O. The lanthanum b-diketonate precursor, La(thd) 3 , was used as the reference precursor.

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Structure analysis of LaAlO3() surfaces by low energy neutral scattering spectroscopy

Cited by 34 publications

References 16 publications

Structural, optical, and electrical properties of epitaxial titanium oxide thin films on LaAlO3 substrate

Structural, optical, and electrical properties of epitaxial titanium oxide thin films on LaAlO3 substrate

First-principles study of polar LaAlO (001) surface stabilization by point defects

Atomic Layer Deposition and Properties of Lanthanum Oxide and Lanthanum‐Aluminum Oxide Films

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