Structural variations induced by difference of the inert pair effect in the stibnite-bismuthinite solid solution series (Sb,Bi)<sub>2</sub>S<sub>3</sub>

Kyono, Atsushi; Kimata, Mitsuyoshi

doi:10.2138/am-2004-0702

Cited by 82 publications

(46 citation statements)

References 21 publications

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“…The experimental 5 powder patterns of Sb 2 S 3 and the XRD pattern simulated from the reported data were found to be in good agreement. 35 The sample was then used for high pressure Raman and resistivity studies. High pressure Raman studies were carried out using a Mao-Bell type Diamond Anvil Cell (DAC).…”

Section: Methodsmentioning

confidence: 99%

Pressure-induced electronic topological transition in Sb₂S₃

Sorb

Rajaji

Malavi

et al. 2015

J. Phys.: Condens. Matter

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Pressure induced electronic topological transitions in the wide band gap semiconductor Sb 2 S 3 (E g = 1.7-1.8 eV) with similar crystal symmetry (SG: Pnma) to its illustrious analog, Sb 2 Se 3 , has been studied using Raman spectroscopy, resistivity and the available literature on the xray diffraction studies. In this report, the vibrational and the transport properties of Sb 2 S 3 have been studied up to 22 GPa and 11 GPa, respectively. We observed the softening of phonon modes A g (2), A g (3) and B 2g and a sharp anomaly in their line widths at 4 GPa. The resistivity studies also shows an anomaly around this pressure. The changes in resistivity as well as Raman line widths can be ascribed to the changes in the topology of the Fermi surface which induces the electron-phonon and the strong phonon-phonon coupling, indicating a clear evidence of the electronic topological transition (ETT) in Sb 2 S 3 . The pressure dependence of a/c ratio plot obtained from the literature showed a minimum at ~ 5 GPa, which is consistent with our high pressure Raman and resistivity results. Finally, we give the plausible reasons for the non-existence of a non-trivial topological state in Sb 2 S 3 at high pressures.

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Section: Methodsmentioning

confidence: 99%

Pressure-induced electronic topological transition in Sb₂S₃

Sorb

Rajaji

Malavi

et al. 2015

J. Phys.: Condens. Matter

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“…reveal several different orientations of

{Bi}_{2} S_{3}

. For comparison, we use the relative intensities of powder material calculated with PowderCell () using orthorhombic crystal parameters

a = 1.1316

nm,

b = 1.1178

nm, and

c = 0.39709

nm (). All determined reflection peaks can be attributed to stoichometric

{Bi}_{2} S_{3}

, except the AZO peak, so that we exclude the presence of other phases.…”

Section: Structural Propertiesmentioning

confidence: 99%

Detailed photoluminescence study of vapor deposited films of different surface morphology

Sträter

Haaf

Brüggemann

et al. 2014

Physica Status Solidi (b)

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authorenWe present a temperature‐ and intensity‐dependent photoluminescence (PL) study of the binary semiconductor Bi2S3 on the mm‐scale and a laterally resolved PL measurement with a resolution of x≈900nm. The films can show a rather rough surface with needles and flakes of Bi2S3 with different orientations as well as very flat and smooth surface morphology. Despite a band gap of Eg≈1.3eV the films show a splitting of quasi‐Fermi levels (QFL) of μ≈700meV at room temperature. By means of temperature‐dependent PL we have located several radiative and non‐radiative defect states in the band gap. For a better understanding of this thin film semiconductor a full analysis of the laterally resolved PL measurement including the integrated PL yield, energetic position of the PL maximum, optical band gap, splitting of quasi‐Fermi levels and defect absorption of both sample morphologies is presented to avoid misinterpretation of experimental data.

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“…with a non-isostructural nature of the basic structural units) could play role in the deviations observed for the experimental data. Therefore, the crystal structure of corresponding As 2 S 3 , Sb 2 S 3 and Bi 2 S 3 materials was analyzed in detail [13][14][15].…”

Section: Contributedmentioning

confidence: 99%

Ab initio calculations and the effect of atomic substitution in the Raman spectra of As(Sb,Bi)₂S₃ films

Kondrat

Popovich

Holomb

et al. 2010

Phys. Status Solidi (c)

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The comparative analysis of the calculated and experimental Raman spectra of non‐crystalline As2S3, Bi2S3 and Sb2S3 films (i.e. with exchanging As to Sb, Bi) obtained by flash evaporation on glassy and silicon substrates was performed. The spectra were interpreted and analysed using the results of molecular modelling and ab initio calculations. The structural models used for calculations include both basic building blocks and other types of atomic clusters known for As‐S, Bi‐S, and Sb‐S binary systems. The influence of atomic substitution on the nanostructure of flash evaporated As(Sb,Bi)2S3 films were investigated, observed photo‐induced phenomena and related peculiarities were analysed using results of ab initio calculations and discussed in detail. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Structural variations induced by difference of the inert pair effect in the stibnite-bismuthinite solid solution series (Sb,Bi)₂S₃

Cited by 82 publications

References 21 publications

Pressure-induced electronic topological transition in Sb₂S₃

Pressure-induced electronic topological transition in Sb₂S₃

Detailed photoluminescence study of vapor deposited films of different surface morphology

Ab initio calculations and the effect of atomic substitution in the Raman spectra of As(Sb,Bi)₂S₃ films

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Structural variations induced by difference of the inert pair effect in the stibnite-bismuthinite solid solution series (Sb,Bi)2S3

Cited by 82 publications

References 21 publications

Pressure-induced electronic topological transition in Sb2S3

Pressure-induced electronic topological transition in Sb2S3

Detailed photoluminescence study of vapor deposited films of different surface morphology

Ab initio calculations and the effect of atomic substitution in the Raman spectra of As(Sb,Bi)2S3 films

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Product

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Structural variations induced by difference of the inert pair effect in the stibnite-bismuthinite solid solution series (Sb,Bi)₂S₃

Pressure-induced electronic topological transition in Sb₂S₃

Pressure-induced electronic topological transition in Sb₂S₃

Ab initio calculations and the effect of atomic substitution in the Raman spectra of As(Sb,Bi)₂S₃ films