Structural variations in indium tin tellurides and their thermoelectric properties

Structural Complexity and Thermoelectric Properties of Quaternary and Quinary Tellurides (GexSn1–x)0.8(InySb1–y)0.13Te with 0 ≤ x,y ≤ 1

“…locally observed in HRTEM images of Sn 0.8 In 0.067 Sb 0.067 Te (Figure 5a), comparable to Sn 0.8 Sb 0.13 Te (Figure S15, Supporting Information) and Sn 0.8 In 0.13 Te; [33] diffraction patterns show almost no diffuse streaks. Similar to studies on Ge 0.4 Sn 0.4 Sb 0.13 Te or Ge 0.8 In 0.13 Te, [23,24] the presence of Ge seems to facilitate the formation of irregularly spaced finite vacancy layers in Ge 0.4 Sn 0.4 In 0.13 Te and Ge 0.4 Sn 0.4 In 0.067 Sb 0.067 Te indicated by typical "comet-shaped" diffuse streaks (Figure 5b, c).…”

“…The formation and dissolution of In-rich precipitates has been discussed in this context. [33] Regarding substitution of individual elements, the maximal Seebeck coefficient changes significantly (ca. 180 μV•K -1 for Ge 0.8 In 0.13 Te, ca.…”

“…400 °C). [33] Syntheses of quinary samples like Ge 0.4 Sn 0.4 In 0.067 Sb 0.067 Te (normalized to Te 1 ) address the question how higher complexity correlates with structural effects and changes of thermoelectric properties; and they promise to afford intriguing samples for transmission electron microscopy (TEM). Due to the lacking scattering contrast of Sn, In, and Sb in conventional diffraction experiments, resonant X-ray scattering is required in order to elucidate the element distribution.…”