Structural transformations in the As–Se system under high pressures and temperatures

Lityagina, L. M.; Kulikova, L. F.; Зибров, И. П.; Dyuzheva, T. I.; Николаев, Н. А.; Бражкин, В. В.

doi:10.1016/j.jallcom.2015.05.069

Cited by 8 publications

(4 citation statements)

References 6 publications

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“…At 1050 °C and 7 GPa, As 2 Se 3 is reported to disproportionate to AsSe and AsSe 2 , the latter of which has an MoS 2 -type structure (space group R3m). 619 Similarly, orpiment (As 2 S 3 ) disproportionates above 6 GPa and 600 °C to AsS and AsS 2 . 620 The structure of AsS (space group Pca2 1 ) has As−As bonds of 2.4−2.6 Å and consists of washboard-like layers separated by vdW gaps reminiscent of the sw/aw structure motif observed in the group V elements and group IV monochalcogenides.…”

Section: Structures and Properties Of 2d Group IV Metalmentioning

confidence: 99%

“…α-As 2 Se 3 is reported to transition to the β phase (α-As 2 Te 3 ) at pressures of 3–5 GPa and temperatures of 300–650 °C, and subsequently changes to γ-As 2 Se 3 at 7 GPa and 950 °C, both of which are stable at room temperature and atmospheric pressure. , The structural details of γ-As 2 Se 3 are unknown. At 1050 °C and 7 GPa, As 2 Se 3 is reported to disproportionate to AsSe and AsSe 2 , the latter of which has an MoS 2 -type structure (space group R 3 m ) . Similarly, orpiment (As 2 S 3 ) disproportionates above 6 GPa and 600 °C to AsS and AsS 2 .…”

Section: Post-transition Metal Chalcogenidesmentioning

confidence: 99%

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Polymorphism in Post-Dichalcogenide Two-Dimensional Materials

2021

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Two-dimensional (2D) materials exhibit a wide range of atomic structures, compositions, and associated versatility of properties. Furthermore, for a given composition, a variety of different crystal structures (i.e., polymorphs) can be observed. Polymorphism in 2D materials presents a fertile landscape for designing novel architectures and imparting new functionalities. The objective of this Review is to identify the polymorphs of emerging 2D materials, describe their polymorph-dependent properties, and outline methods used for polymorph control. Since traditional 2D materials (e.g., graphene, hexagonal boron nitride, and transition metal dichalcogenides) have already been studied extensively, the focus here is on polymorphism in post-dichalcogenide 2D materials including group III, IV, and V elemental 2D materials, layered group III, IV, and V metal chalcogenides, and 2D transition metal halides. In addition to providing a comprehensive survey of recent experimental and theoretical literature, this Review identifies the most promising opportunities for future research including how 2D polymorph engineering can provide a pathway to materials by design.

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Section: Structures and Properties Of 2d Group IV Metalmentioning

confidence: 99%

Section: Post-transition Metal Chalcogenidesmentioning

confidence: 99%

Polymorphism in Post-Dichalcogenide Two-Dimensional Materials

2021

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“…This value is lower than the room temperature thermal energy (25 meV at 300 K). Hence, it seems that the R 3m phase is experimentally possible to be synthesized in Sb 2 Se 3 , as it has been synthesized in As 2 Te 3 and As 2 Se 3 [63,64]. Since the rhombohedral phase is expected to show novel topological properties under high-pressure conditions, the first prospect would be to crystallize the Sb 2 Se 3 in the R 3m phase in various available synthesis routes (like high-pressure high-temperature synthesis) and study them systematically.…”

Section: A 2 X 3 Compoundsmentioning

confidence: 99%

Pressure induced topological and topological crystalline insulators

Rajaji

Manjón

Narayana

2022

J. Phys.: Condens. Matter

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Research on topological and topological crystalline insulators is one of the most intense and exciting topics due to its fascinating fundamental science and potential technological applications. Pressure (strain) is one potential pathway to induce the non-trivial topological phases in some topologically trivial (normal) insulating or semiconducting materials. In the last ten years, there have been substantial theoretical and experimental efforts from condensed-matter scientists to characterize and understand pressure-induced topological quantum phase transitions. In particular, a promising enhancement of the thermoelectric performance through pressure-induced topological quantum phase transition has been recently realized; thus evidencing the importance of this subject in society. Since the pressure effect can be mimicked by chemical doping or substitution in many cases, these results have opened a new route to develop more efficient materials for harvesting green energy at ambient conditions. Therefore, a detailed understanding of the mechanism of pressure-induced topological quantum phase transitions in various classes of materials with spin-orbit interaction is crucial to improve their properties for technological implementations. Hence, this review focuses on the emerging area of pressure-induced topological quantum phase transitions to provide a comprehensive understanding of this subject from both theoretical and experimental points of view. In particular, it covers the Raman signatures of detecting the topological transitions (under pressure), some of the important pressure-induced topological and topological crystalline insulators of the various classes of spin-orbit coupling materials, and provide future research directions in this interesting field.

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“…However, this does not necessarily mean that the R% 3m phase of these compounds cannot be synthesized, as R% 3m As 2 Se 3 can be prepared at high pressure and high temperature, which indicates that the tetradymite-like structure of As 2 Se 3 is metastable under ambient conditions. 80,[100][101][102] It is therefore possible that tetradymitelike As 2 S 3 , Sb 2 S 3 and Bi 2 S 3 could also potentially be synthesized under the right conditions.…”

Section: On the Observation Of The R% 3m Phase Of A 2 X 3 Sesquichalc...mentioning

confidence: 99%