2014
DOI: 10.1016/j.tsf.2014.05.067
|View full text |Cite
|
Sign up to set email alerts
|

Structural transformation and functional properties of vanadium oxide films after low-temperature annealing

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1

Citation Types

0
5
0

Year Published

2015
2015
2024
2024

Publication Types

Select...
9

Relationship

0
9

Authors

Journals

citations
Cited by 20 publications
(5 citation statements)
references
References 34 publications
0
5
0
Order By: Relevance
“…The W profile in Figure b shows that the content of W in different depths in the film retain an average value of 1.70% in the near-surface region and is in accordance with purpose doping contents. The average ratio of O/V is 1.801 in the film with the V middle layer of the sputtering time 3 s. According to the report of Goltvyanskyi et al on the phase components of the VO x (1.8 < x < 2.2), the single-phase-ordered VO 2 phase with a high TCR value, low hysteresis parameters, and resistivity at room temperature can be easily formed, displaying a high thermochromic effect and sensitivity to infrared radiation …”
Section: Results and Discussionmentioning
confidence: 96%
See 1 more Smart Citation
“…The W profile in Figure b shows that the content of W in different depths in the film retain an average value of 1.70% in the near-surface region and is in accordance with purpose doping contents. The average ratio of O/V is 1.801 in the film with the V middle layer of the sputtering time 3 s. According to the report of Goltvyanskyi et al on the phase components of the VO x (1.8 < x < 2.2), the single-phase-ordered VO 2 phase with a high TCR value, low hysteresis parameters, and resistivity at room temperature can be easily formed, displaying a high thermochromic effect and sensitivity to infrared radiation …”
Section: Results and Discussionmentioning
confidence: 96%
“…The average ratio of O/V is 1.801 in the film with the V middle layer of the sputtering time 3 s. According to the report of Goltvyanskyi et al on the phase components of the VO x (1.8 < x < 2.2), the single-phase-ordered VO 2 phase with a high TCR value, low hysteresis parameters, and resistivity at room temperature can be easily formed, displaying a high thermochromic effect and sensitivity to infrared radiation. 28 3.2. Optical and Electrical Properties.…”
Section: Resultsmentioning
confidence: 99%
“…3 a Tauc plot is a beneficial correlation in bandgap between VO 2 synthesized here and reported pristine VO 2 structures. The spectrum indicates that the crystals in solution are VO 2 , since the determined bandgap between V 3d 8 and 3p* of B0.72 eV is characteristic for pristine VO 2 , [56][57][58][59][60][61][62] while other possible vanadium oxides such as V 2 O 5 feature wider gaps of B2.35 eV. 62,63 These measurements confirm that there are no other vanadium oxides present since the bandgap measures is characteristic to VO 2 .…”
Section: Composition Optical Bandgap Raman Spectra and Surface Morphology Of Vo 2 Crystalsmentioning
confidence: 75%
“…Transitions in structure and composition have been reported for VO x films as function of atmosphere and annealing temperature [19].…”
Section: Discussionmentioning
confidence: 99%