Structural, Surface Morphology and Optical Properties of ZnS Films by Chemical Bath Deposition at Various Zn/S Molar Ratios

Yu, Fei-Peng; Ou, Sin-Liang; Yao, Pin-Chuan; Wu, Bing-Rui; Wuu, Dong−Sing

doi:10.1155/2014/594952

Cited by 18 publications

(12 citation statements)

References 19 publications

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“…No diffraction peaks corresponding to the hexagonal phase of ZnS were detected. The observed XRD pattern for ZnS is in good agreement with the observations reported earlier .…”

Section: Resultssupporting

confidence: 91%

Nanocrystalline and monophasic thin films of metal chalcogenide (FeS, ZnS) and oxide (ZnO) by chemical bath deposition (CBD)

Akhtar

Mehmood

Ahmad

et al. 2017

Phys. Status Solidi A

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FeS, ZnS, and ZnO nanostructured thin films have been deposited by Chemical Bath Deposition (CBD), a simple and cost effective technique. These materials with different morphologies such as nano‐flakes, nanoparticles and nanorods for FeS, ZnS, and ZnO, respectively were deposited onto the glass substrates. The crystallite sizes have been estimated from Scherrer's equation and were found to be 14 nm for nano‐flakes of FeS, 9.09 nm for nanoparticles of ZnS, and 49 nm for nanorods of ZnO. The average values of the band gaps were found to be 1.97, 3.43, and 3.74 eV for FeS, ZnO, and ZnS thin films, respectively. These nanostructured semiconducting materials have wide applications in advanced optoelectronic devices.

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“…No diffraction peaks corresponding to the hexagonal phase of ZnS were detected. The observed XRD pattern for ZnS is in good agreement with the observations reported earlier .…”

Section: Resultssupporting

confidence: 91%

Nanocrystalline and monophasic thin films of metal chalcogenide (FeS, ZnS) and oxide (ZnO) by chemical bath deposition (CBD)

Akhtar

Mehmood

Ahmad

et al. 2017

Phys. Status Solidi A

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“…This charge can be both of the biographical origin, and induced in the bulk by the surface states of the opposite sign. The latter, as it is well known, is associated with the oxygen centers of adsorption origin, the negative charge of which is related with the capture of electrons from the near-surface region of the material [30][31][32].…”

Section: Peculiarities Of Charge Formation and Localization In Zns Filmsmentioning

confidence: 99%

Semiconductor surface spectroscopy using transverse acousto-electric effect: Role of surface charge in photo-processes at the ZnS/Si interface

Tatyanenko¹

2018

Semicond. Phys. Quantum Electron. Optoelectron

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The effect of illumination in the visible spectral range on the magnitude of transverse acoustoelectric effect (TAE) in ZnS/Si structures was studied using a noncontact surface acoustic wave device based on the acoustoelectronic structure with an air gap. ZnS films were obtained using pyrolysis of the chelate organometallic complex, zinc diethyldithiocarbamate, on Si substrates within the temperature range 220 to 260 °С. It has been established that the charge of the adsorption origin on the external surface of the ZnS film strongly influences the photo-processes in the structure under consideration. For the samples with a small surface charge, the value of TAE decreases rapidly with the increase in illumination power due to an increase in the concentration of non-equilibrium carriers. For the samples with a large surface charge, the barrier-trap mechanism of photogeneration is observed, in which the appearance of non-equilibrium carriers is accompanied by their capture and subsequent thermalization. This compensating mechanism explains well both stabilization of the magnitude of TAE by a distributed system of traps with rather large capacitance, and the specific shape of dependence of the TAE magnitude on illumination power. The technique developed by us on the basis of the transverse acoustoelectric effect in the layered piezodielectric / air-gap / semiconductor structure is a powerful tool for noncontact determination of the charge state of film structures, depending on their deposition parameters and various external conditions.

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“…In this study, the ZnO layers were deposited on ZnS seed films to fabricate the PDs. Firstly, ZnS thin films with a thickness approximately 80 nm were grown on c-plane sapphire substrates using the CBD method 37 . The zinc sulfate (ZnSO 4 ) and thiourea (SC(NH 2 ) 2 ) solutions were employed in the CBD growth, and their concentrations were kept at 1.4 × 10 −3 and 0.105 M, respectively.…”

Section: Methodsmentioning

confidence: 99%

Transformation from Film to Nanorod via a Sacrifical Layer: Pulsed Laser Deposition of ZnO for Enhancing Photodetector Performance

2017

Sci Rep

Self Cite

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A novel fabrication method for single crystalline ZnO nanorods by pulsed laser deposition (PLD) using a chemical-bath-deposited ZnS seed layer is proposed. For the substrate temperature (Ts) lower than 700 °C, the PLD-ZnO showed a polycrystalline phase and film-type morphology, resulting from the ZnS seed layer with a cubic phase. However, the ZnS film became a sacrifical layer and single crystalline ZnO(002) nanorods can be achieved at Ts of 900 °C, where ZnS was decomposed to zinc metals and sulfur fumes. The transformation from ZnO film to nanorod microstructure was demonstrated with the change of ZnS layer into Zn grains. Enhanced performance of the metal-semiconductor-metal photodetectors were fabricated with ZnO/ZnS samples grown at Ts of 500, 700, and 900 °C. The responsivities (@1 V and 370 nm) of these three devices were 1.71, 6.35, and 98.67 A/W, while their UV-to-visible discrimination ratios were 7.2, 16.5, and 439.1, respectively. Obviously, a higher light-capturing efficiency was obtained in the 900 °C-grown ZnO/ZnS device owing to its one-dimensional nanostructure with high crystal quality. The results indicate PLD combined with a sacrifical nanostructure is a promising method for obtaining high-quality ZnO nanorods, which paves the way for the fabrication of high performance ZnO-based devices.

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Structural, Surface Morphology and Optical Properties of ZnS Films by Chemical Bath Deposition at Various Zn/S Molar Ratios

Cited by 18 publications

References 19 publications

Nanocrystalline and monophasic thin films of metal chalcogenide (FeS, ZnS) and oxide (ZnO) by chemical bath deposition (CBD)

Nanocrystalline and monophasic thin films of metal chalcogenide (FeS, ZnS) and oxide (ZnO) by chemical bath deposition (CBD)

Semiconductor surface spectroscopy using transverse acousto-electric effect: Role of surface charge in photo-processes at the ZnS/Si interface

Transformation from Film to Nanorod via a Sacrifical Layer: Pulsed Laser Deposition of ZnO for Enhancing Photodetector Performance

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