Structural study of lanthanum nickelate thin films deposited on different single crystal substrates

Faucheux, Vincent; Pignard, S.; Audier, M.

doi:10.1016/j.jssc.2004.10.016

Cited by 12 publications

(11 citation statements)

References 23 publications

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“…27 The deviation in the composition transfer between vapor and condensed phases is typical for MOCVD processes and occurs because each individual precursor has a different decomposition temperature which induces a different deposition yield for each element. The deposited lanthanum nickelates were nickel-rich compared with the injected precursor solution, as previously observed by Lane et 23 Increasing the deposition temperature gave rise to highly c-axis oriented La 2 NiO 4+␦ phases, showing for films deposited around 750°C the narrowest XRD peaks and the best surface morphology uniformity. Films with different thickness were prepared, at these optimized conditions, by simply varying the number of droplets injected into the reactor.…”

Section: Resultssupporting

confidence: 82%

Electrical Conductivity and Oxygen Exchange Kinetics of La[sub 2]NiO[sub 4+δ] Thin Films Grown by Chemical Vapor Deposition

García

Burriel

Bonanos

et al. 2008

J. Electrochem. Soc.

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Epitaxial c-axis oriented La 2 NiO 4+␦ films were deposited onto SrTiO 3 and NdGaO 3 substrates by the pulsed injection metal organic chemical vapor deposition technique. Experimental conditions were optimized in order to accurately control the composition, thickness, and texture of the layers. X-ray diffraction was used to confirm the high crystalline quality of the obtained material. Electrical characterizations were performed on thin ͑50 nm͒ and thick ͑335 nm͒ layers. The total specific conductivity, which is predominantly electronic, was found to be larger for the thinner films measured ͑50 nm͒, probably due to the effect of the strain present in the layers. Those thin films ͑50 nm͒ showed values even larger than those observed for single crystals and, to our knowledge, are the largest conductivity values reported to date for the La 2 NiO 4+␦ material. The oxygen exchange kinetics was studied by the electrical conductivity relaxation technique, from which the surface exchange coefficient was determined.

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Section: Resultssupporting

confidence: 82%

Electrical Conductivity and Oxygen Exchange Kinetics of La[sub 2]NiO[sub 4+δ] Thin Films Grown by Chemical Vapor Deposition

García

Burriel

Bonanos

et al. 2008

J. Electrochem. Soc.

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“…31 Polycrystalline La 2 NiO 4 films with a different degree of orientation have been previously obtained by spray pyrolysis, 29,32 sol-gel technique, 33,34 and pulsed injection metal organic chemical vapor deposition (PIMOCVD) technique. 30,35,36 However, to our knowledge, there is only one recent report in the literature about high quality c-axisoriented La 2 NiO 4 epitaxial films, deposited in that case by pulsed laser deposition. 37 In this work, we present our results on the deposition of epitaxial lanthanum-nickel oxide thin films by the liquid PIMOCVD technique.…”

Section: Introductionmentioning

confidence: 99%

“…Studies concerning the preparation of lanthanum nickel oxide epitaxial films are rather scarce, particularly for La 2 NiO 4 , − and have demonstrated the difficulty to prepare pure phases, intergrowth defects being common in these compounds, particularly for n > 1 . Polycrystalline La 2 NiO 4 films with a different degree of orientation have been previously obtained by spray pyrolysis, , sol−gel technique, , and pulsed injection metal organic chemical vapor deposition (PIMOCVD) technique. ,, However, to our knowledge, there is only one recent report in the literature about high quality c -axis-oriented La 2 NiO 4 epitaxial films, deposited in that case by pulsed laser deposition …”

Section: Introductionmentioning

confidence: 99%

Enhanced High-Temperature Electronic Transport Properties in Nanostructured Epitaxial Thin Films of the La_n₊₁Ni_nO₃_n₊₁ Ruddlesden−Popper Series (n = 1, 2, 3, ∞)

et al. 2007

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Epitaxial thin films of lanthanum nickel oxide Ruddlesden−Popper series (La n +1Ni n O3 n +1) have been prepared on different single-crystal substrates by metal organic chemical vapor deposition. Varying the La/Ni composition ratio in the precursor solution allows deposition of films with controlled La/Ni stoichiometry ranging between 1 and 2. Epitaxial La2NiO4 (n = 1) and LaNiO3 (n = ∞) pure phases were obtained for La/Ni close to 2 and 1, respectively. For intermediate La/Ni composition, films with a microstructure consisting of a disordered stacking of nanodomains with progressively increasing average n value were obtained. Similarly with bulk samples, the electronic conductivity of the nanostructured films increases with the measured average n value, opening the possibility to prepare new mixed ionic and electronic conducting nanocomposite thin films with tailored properties

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“…8) The lattice parameters of hexagonal and orthorhombic bulk HoMnO 3 , and various substrates are summarized in Table I. [13][14][15][16] However, for the HoMnO 3 film on the SrTiO 3 (100) substrate, the possible crystalline orientation is as follows: HoMnO 3 -(110) k SrTiO 3 -(001) or HoMnO 3 -(001)k SrTiO 3 -(001). The structure type and crystalline orientations described above seem to be consistent with the XRD data Table I.…”

Section: Experimental Methodsmentioning

confidence: 99%

“…Lattice parameters of hexagonal (HX) and orthorhombic (OT) bulk HoMnO 3 , and various substrates. [13][14][15][16] …”

Section: Experimental Methodsmentioning

confidence: 99%

Substrate-Dependent Growth of HoMnO₃ Films

Han¹,

Lin

et al. 2010

Jpn. J. Appl. Phys.

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Manganites with small rare earths (RE ¼ Ho, Er, Tm, Yb, Lu, or Y) and hexagonal structures belong to a class of materials known as hexagonal ferroelectrics, in contrast to those with large rare earths and orthorhombic, perovskite-related structures showing different physical properties. In this work, we study the effects of growth conditions on the stabilization of HoMnO 3 films with both hexagonal and orthorhombic structures. Based on our experimental results, a HoMnO 3 film with a hexagonal structure can be stabilized on Si(111) at 850 C and above. Pure orthorhombic phases grow on SrTiO 3 (100), SrTiO 3 (110), LaAlO 3 (100), and LaAlO 3 (110) in a temperature range from 750 to 850 C. Multiphase samples can be grown on MgO(100) at all temperatures. #

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Structural study of lanthanum nickelate thin films deposited on different single crystal substrates

Cited by 12 publications

References 23 publications

Electrical Conductivity and Oxygen Exchange Kinetics of La[sub 2]NiO[sub 4+δ] Thin Films Grown by Chemical Vapor Deposition

Electrical Conductivity and Oxygen Exchange Kinetics of La[sub 2]NiO[sub 4+δ] Thin Films Grown by Chemical Vapor Deposition

Enhanced High-Temperature Electronic Transport Properties in Nanostructured Epitaxial Thin Films of the La_n₊₁Ni_nO₃_n₊₁ Ruddlesden−Popper Series (n = 1, 2, 3, ∞)

Substrate-Dependent Growth of HoMnO₃ Films

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Structural study of lanthanum nickelate thin films deposited on different single crystal substrates

Cited by 12 publications

References 23 publications

Electrical Conductivity and Oxygen Exchange Kinetics of La[sub 2]NiO[sub 4+δ] Thin Films Grown by Chemical Vapor Deposition

Electrical Conductivity and Oxygen Exchange Kinetics of La[sub 2]NiO[sub 4+δ] Thin Films Grown by Chemical Vapor Deposition

Enhanced High-Temperature Electronic Transport Properties in Nanostructured Epitaxial Thin Films of the Lan+1NinO3n+1 Ruddlesden−Popper Series (n = 1, 2, 3, ∞)

Substrate-Dependent Growth of HoMnO3 Films

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Enhanced High-Temperature Electronic Transport Properties in Nanostructured Epitaxial Thin Films of the La_n₊₁Ni_nO₃_n₊₁ Ruddlesden−Popper Series (n = 1, 2, 3, ∞)

Substrate-Dependent Growth of HoMnO₃ Films