The dearth of
n
-type sulfides with thermoelectric
performance comparable to that of their
p-
type analogues
presents a problem in the fabrication of all-sulfide devices. Chalcopyrite
(CuFeS
2
) offers a rare example of an
n
-type sulfide. Chemical substitution has been used to enhance the
thermoelectric performance of chalcopyrite through preparation of
Cu
1-
x
Sn
x
FeS
2
(0 ≤
x
≤ 0.1). Substitution
induces a high level of mass and strain field fluctuation, leading
to lattice softening and enhanced point-defect scattering. Together
with dislocations and twinning identified by transmission electron
microscopy, this provides a mechanism for scattering phonons with
a wide range of mean free paths. Substituted materials retain a large
density-of-states effective mass and, hence, a high Seebeck coefficient.
Combined with a high charge-carrier mobility and, thus, high electrical
conductivity, a 3-fold improvement in power factor is achieved. Density
functional theory (DFT) calculations reveal that substitution leads
to the creation of small polarons, involving localized Fe
2+
states, as confirmed by X-ray photoelectron spectroscopy. Small
polaron formation limits the increase in carrier concentration to
values that are lower than expected on electron-counting grounds.
An improved power factor, coupled with substantial reductions (up
to 40%) in lattice thermal conductivity, increases the maximum figure-of-merit
by 300%, to
zT
≈ 0.3 at 673 K for Cu
0.96
Sn
0.04
FeS
2
.