Structural studies of III–V and group IV semiconductors at high pressure

Nelmes, R. J.; McMahon, M. I.; Wright, Nick; Allan, David R.; Liu, H.; Loveday, J. S.

doi:10.1016/0022-3697(94)00236-3

Cited by 65 publications

(32 citation statements)

References 24 publications

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“…Therefore, the hysteresis at room temperature is > 4 GPa. This high value is not really surprising because, in fact, large hysteresis has been reported before in other III±V semiconductors like GaAs (6 to 7 GPa) [17,18], InSb (2.5 GPa) [11] or InAs (4 GPa) [19]. However, the reasons for such behavior in these compounds are still not well known.…”

Section: Phase Diagramsupporting

confidence: 53%

X-Ray Diffraction Measurements in GaSb under High Pressure and Temperature

Martínez‐García¹,

Godec

Syfosse

et al. 1999

phys. stat. sol. (b)

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Section: Phase Diagramsupporting

confidence: 53%

X-Ray Diffraction Measurements in GaSb under High Pressure and Temperature

Martínez‐García¹,

Godec

Syfosse

et al. 1999

phys. stat. sol. (b)

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“…Further evidence for the origin of the D band is obtained from the ambient-pressure PL spectrum after a pressure cycle through the zincblende to rocksalt transition which for bulk InAs occurs between 7 and 8 GPa [10,11]. Above 7.2 GPa the luminescence of the sample is fully quenched.…”

Section: Resultsmentioning

confidence: 99%

Pressure dependence of photoluminescence spectra of self‐assembled InAs/GaAs quantum dots

Manjón

Goñi

Syassen

et al. 2003

Physica Status Solidi (b)

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Photoluminescence (PL) measurements have been performed in InAs/GaAs self-assembled quantum dots (QDs) under high excitation conditions at low temperatures and under high hydrostatic pressures up to 10 GPa. Mechanically polished samples for high pressure experiments exhibited PL emission from the QD ground state but not from the excited states. Instead, a new broad band is observed in the energy range of the first excited state, which is tentatively attributed to emission from smaller dots formed during the mechanical thinning of the sample. With increasing pressure we found a similar blue shift for the PL maxima of the QD ground state (65 meV/GPa) and of the new broad band (69 meV/ GPa). These pressure coefficients are 20% and 40% lower than those reported for dots of less than half the height as in our case and for the wetting layer, respectively. Our results point to a systematic reduction of the pressure coefficient of the InAs QDs with the increase of the dot height.

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“…1 and 2). Bulk InAs undergoes a phase transition to the rock-salt (RS) phase at 7 GPa [21], but the QWrs emission is observed up to nearly 10 GPa, pressure at which the PL signal from QWrs and QWs disappears, most probably due to the transition to de RS phase, as observed in Fig. 4.…”

Section: Resultsmentioning

confidence: 79%

Pressure dependence of photoluminescence of InAs/InP self‐assembled quantum wires

Ruiz-Castillo

Segura²,

Sans

et al. 2006

Physica Status Solidi (b)

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This paper investigates the electronic structure of self-assembled InAs quantum wires (QWrs), grown under different conditions by molecular beam epitaxy on InP, by means of photoluminescence measurements under pressure. In samples with regularly distributed QWrs, room pressure photoluminescence spectra consist of a broad band centred at about 0.85 eV, which can be easily de-convoluted in a few Gaussian peaks. In samples with isolated QWrs, photoluminescence spectra exhibit up to four clearly resolved bands. Applying hydrostatic pressure, the whole emission band monotonously shifts towards higher photon energies with pressure coefficients ranging from 72 to 98 meV/GPa. In contrast to InAs quantum dots on GaAs, quantum wires photoluminescence is observed up to 10 GPa, indicating that InAs QWrs are metastable well above pressure at which bulk InAs undergoes a phase transition to the rock-salt phase (7 GPa).

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Structural studies of III–V and group IV semiconductors at high pressure

Cited by 65 publications

References 24 publications

X-Ray Diffraction Measurements in GaSb under High Pressure and Temperature

X-Ray Diffraction Measurements in GaSb under High Pressure and Temperature

Pressure dependence of photoluminescence spectra of self‐assembled InAs/GaAs quantum dots

Pressure dependence of photoluminescence of InAs/InP self‐assembled quantum wires

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