Structural stability and Raman scattering of ZnSe nanoribbons under high pressure

Study of semiconducting nanomaterials under pressure

“…Figure 4a shows that P T of ZnSe nanoribbons of thickness 20-80 nm and width 0.2-2 μm and bulk ZnSe remains close to each other. The computed value of volume collapse, 12.76% at P T 012.6 GPa for nanoribbons and 15.04% at P T 013 GPa for bulk ZnSe, are close to their measured value of 13% for nanoribbons and 15% for bulk phase [7,12]. The variation of bulk modulus with the pressure behaves differently as compared to that in other members of this family, i.e., ZnO and ZnS.…”

“…The pressure induced structural phase transition has been observed experimentally in some semiconducting nanomaterials : ZnO (nanorods), ZnS (2.8, 5, 10 and 25.3 nm), ZnSe (nanoribbons), GaN (2-8 nm), CdSe (4.2 nm), CoO (50 nm), CeO 2 (9-15 nm), SnO 2 (3, 8, 14 nm), SiC (20,30,50, and 130 nm), c-BC 2 N (5-8 nm) and β-Ga 2 O 3 (14.8 ±1.9 nm), using in-situ energy dispersive X-ray diffraction at room temperature [6][7][8][9][10][11][12][13][14][15][16][17][18][19][20][21][22]. The high pressure behavior of two samples of ZnO nanorods with different grain sizes (sample A : diameter 150 nm, length 12000 nm and sample B : diameter 10 nm, length 230 nm) have been studied and compared with their corresponding bulk phase by Xiang et al [6].…”

“…ZnSe too crystallizes in B3 phase at ambient conditions and transforms to B1 phase at high pressures [7]. The B3 to B1 structural phase transformation has been studied in ZnSe nanoribbons with 20-80 nm thickness and width 0.2-2 μm under pressure [12]. The B4 to B1 structural phase transition from has been studied in both nano (0.2-0.8 nm) and bulk phases of wide band gap semiconductor GaN [13,14].…”

Study on Raman spectra of zinc selenide nanopowders synthesized by hydrothermal method

“…The above properties of different ZnSe nanostructures indicate that they will have a broad range of potential applications for electroluminescent devices, field effect transistors, sensors, light-emitting, and solar cells [7,8]. For their applications, it is necessary to understand their structure variation and Raman spectroscopy is extensively used to characterize them [1][2][3]7,9]. The characterization of ZnSe nanostructures from Raman spectroscopy shows two main peaks centered at about 205 and 253 cm −1 which are attributed to the transverse optic (TO) and longitudinal optic (LO) phonon modes of ZnSe [1][2][3], respectively.…”

Ab initio calculation of vibrational frequencies of ZnSe and the Raman spectra

“…It showed that the Raman peak become invisible for pressure higher than 14.8 GPa due to the transition between semiconductor -metal. The Raman frequencies showed value at 251 and 205 cm -1 at low pressure [6]. The elastic and dynamical properties of zinc sulfate (ZnS) and ZnSe has been discuss theoretically using density functional theory (DFT) calculated by ABINIT.…”