Structural refinement, optical and ferroelectric properties of microcrystalline Ba(Zr0.05Ti0.95)O3 perovskite

Badapanda, T.; Sarangi, S.N.; Behera, Banarji; Sahoo, Pratap K.; Anwar, Shahid; Sinha, T. P.; Luz, Geraldo E.; Longo, Elson; Cavalcante, L. S.

doi:10.1016/j.cap.2014.02.015

Cited by 47 publications

(16 citation statements)

References 71 publications

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“…Barium titanate (BaTiO 3 , BTO), ferroelectric material with excellent dielectric, piezoelectric and ferroelectric properties, has been attracting increasing attention due to its widespread application in multilayer ceramic capacitor, thermistor, ferroelectric random access memory, resonator, temperature sensor, piezoelectric sensor, photoelectric device, actuator, etc. [1,2]. In order to further reduce the dielectric loss at low frequencies and increase the stability of the dielectric constant at bias voltages, Zr 4+ was usually chosen as dopant to form barium zirconate titanate (Ba(Zr x Ti 1-x )O 3 , BZT) [3,4].…”

Section: Introductionmentioning

confidence: 99%

Effects of sintering temperature and holding time on the microstructure and electric properties of Ba(Zr0.3Ti0.7)O3 ceramics

Zhang

Chen

et al. 2018

PAC

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Ba(Zr 0.3 Ti 0.7)O 3 (BZT) ceramics was prepared by using conventional solid state reaction. The effects of sintering temperature and holding time on the crystal structure, surface morphology, dielectric, ferroelectric and piezoelectric properties of the BZT ceramics were systematically investigated. X-ray diffraction (XRD) results confirm single cubic perovskite phase in all the sintered samples. Microstructure analysis using scanning electron microscopy (SEM) reveals that the grain sizes increase with increasing the sintering temperature. Dielectric spectroscopy performed in the range of 20 Hz to 2 MHz at room temperature shows that the dielectric constant increases with the sintering temperature and the dielectric constant of the BZT ceramics sintered at 1400°C for 8 h is around 11500. The ferroelectric hysteresis loops show that the coercive field decreases with the holding time, while the remnant polarization does not change obviously. The maximum strain is 0.023% for the sample sintered at 1400°C for 4 h. It is found that the maximum value of the direct piezoelectric coefficient (d 33) of the BZT ceramics sintered at 1400°C for 8 h measured at room temperature is 36.7 pC/N.

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Section: Introductionmentioning

confidence: 99%

Effects of sintering temperature and holding time on the microstructure and electric properties of Ba(Zr0.3Ti0.7)O3 ceramics

Zhang

Chen

et al. 2018

PAC

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“…Note that Sn 4 þ doping causes the cut-on wavelength of BMN system to red shift from 292 nm (4.25 eV) to 410 nm (3.03 eV). This red shift may be attributed to the alteration of the band structure, which is directly related to order-disordered structure as a consequence of the symmetry breaking between O-Mg-O, O-Nb-O, O-Sn-O and/or O-Ba-O bonds (oxygen vacancies) and/or distortions on octahedral clusters [29]. The cut-on wavelength of Sn 4 þ doped BMN ceramics is located on the edge of the visible region via the electronic structure modification, which results in effective ultraviolet absorption and a potential application of eyesight protection.…”

Section: Resultsmentioning

confidence: 97%

Structure and optical properties of Sn4+ doped Ba(Mg1/3Nb2/3)O3 transparent ceramics

Shi

Shen

Zhou

et al. 2015

Ceramics International

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“…The result of grain boundaries decrease will cause an increasing of polarization value, because the grain boundary has a low permittivity. Another factor that may be included is the existence of space charge in the grain boundary which causes the depolarization field 26 . This similar phenomenon has also been observed by Didier et al on BTS films 20 .In As we compared, BaZr 0.1 Ti 0.9 O 3 have a larger size and higher polarization than BaZr 0.08 Ti 0.92 O 3 .…”

Section: Ferroelectric Resultsmentioning

confidence: 99%

The Electrical Hysteresis Loop and Polarization Value of BaZrxTi1-xO3 Multilayer Films Material at Different Annealing Temperature (x = 0.1 and 0.08) based on Sawyer Tower Circuit

Ode

Hikam²,

Soegijono³

et al. 2014

Proceedings of the 2014 International Conference on Physics and Its Applications

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The crystallographic properties and ferroelectric state of BZT multilayer films which deposited on Si (100) substrate was studied in this work. XRD pattern peaks show that BaZr 0.1 T 0.9 O 3 and BaZr 0.08 Ti 0.92 O 3 are found wellcrystallized at 800 o C for 3 hours corresponding to vary annealed temperature. The BZT multilayerfilms are identified as tetragonal-perovskite structure. This is supported by the existence of a measured hysteresis loops which the instrument and the system is on own works.Fundamentally of theoretical in physics field, the Sawyer-Tower Circuit has been concluded to ferroelectric phenomenon analysis on sample of material with experimental result as P-E hysteresis curve.The Sawyer-Tower Circuit method was used to measure the electrical polarization with triangle wave signal at fixed frequencies 50 Hz( = 0), and maximum electrical field (E max) were injected continuously at the 40 Volt/cm. The system plotted the electrical field with respect to polarization (P-E curves), include its value. This data was used as a parameter for determining electric property of material. These results have shown the maximum value of electric field which could be used as measurement parameter. The highest maximum polarization, 34.12 µC/cm 2 , have been determined and obtained on BaZr 0.1 T 0.9 O 3 at 800 o C for 3 hours annealing process and its maximum electric field is noted to be about 38.3 Volt/cm on all samples.In the normal manner,theresultcan provide an explanation of polarization and electrical behavior of ferroelectric sample for further research.

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Structural refinement, optical and ferroelectric properties of microcrystalline Ba(Zr0.05Ti0.95)O3 perovskite

Cited by 47 publications

References 71 publications

Effects of sintering temperature and holding time on the microstructure and electric properties of Ba(Zr0.3Ti0.7)O3 ceramics

Effects of sintering temperature and holding time on the microstructure and electric properties of Ba(Zr0.3Ti0.7)O3 ceramics

Structure and optical properties of Sn4+ doped Ba(Mg1/3Nb2/3)O3 transparent ceramics

The Electrical Hysteresis Loop and Polarization Value of BaZrxTi1-xO3 Multilayer Films Material at Different Annealing Temperature (x = 0.1 and 0.08) based on Sawyer Tower Circuit

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