Structural properties of ZnSe/InSe/ZnSe heterostructures grown by molecular beam epitaxy on GaAs(001) substrates

Avdienko, P. S.; Кириленко, Д. А.; Sedova, I. V.; Sorokin, Sergey

doi:10.1088/1742-6596/1482/1/012006

Cited by 2 publications

(6 citation statements)

References 11 publications

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“…However, the orientation of the ZnSe layer remains unchanged in those parts of the structure where there are no InSe islands. The existence of the (111)-oriented ZnSe phase in the structure was also confirmed by SAED measurements [ 101 ]. We suppose that the growth of ZnSe with a (111) orientation onto the InSe(0001) van der Waals surface is caused by the proximity of the InSe and ZnSe(111) lattice parameters (Δa/a ~ 1% or less, a(InSe) = 4.005 Å [ 41 ]).…”

Section: Resultsmentioning

confidence: 82%

“…The top ZnSe layer on the InSe surface was grown at T S = 300 °C. The details of MBE growth of ZnSe/InSe/ZnSe QW heterostructures as well as studies of their surface morphology were recently reported by Avdienko et al [ 101 ]. Here, we focus mainly on the structural and optical properties of these QW structures.…”

Section: Resultsmentioning

confidence: 99%

“…Therefore, the InSe islands provide the epitaxial orientation of the upper ZnSe layer, despite the weak interaction between them. In this case, the island-like growth of ZnSe(111) can be explained in terms of minimizing the elastic energy of the growing layer [ 101 ].…”

Section: Resultsmentioning

confidence: 99%

“…As mentioned above, one of the main problem in the MBE growth of different layered III-VI’s is the formation of numerous “parasitic” phases, i.e., In 4 Se 3 and In 2 Se 3 [ 73 , 101 ] or Ga 2 Se 3 [ 28 , 30 ] in the case of MBE growth of InSe and GaSe, respectively. For the Ga-Te system, the other possible stable phase is Ga 2 Te 3 [ 105 ].…”

Section: Resultsmentioning

confidence: 99%

“…The growth conditions of InSe on ZnSe(001) surface were chosen the same as in the case of InSe/GaSe heteroepitaxy: T S = 450 • C and flux ratio Se/In (BEP)~5-6. The top ZnSe layer on the InSe surface was grown at T S = 300 • C. The details of MBE growth of ZnSe/InSe/ZnSe QW heterostructures as well as studies of their surface morphology were recently reported by Avdienko et al [101]. Here, we focus mainly on the structural and optical properties of these QW structures.…”

Section: Figurementioning

confidence: 99%

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Molecular Beam Epitaxy of Layered Group III Metal Chalcogenides on GaAs(001) Substrates

et al. 2020

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Development of molecular beam epitaxy (MBE) of two-dimensional (2D) layered materials is an inevitable step in realizing novel devices based on 2D materials and heterostructures. However, due to existence of numerous polytypes and occurrence of additional phases, the synthesis of 2D films remains a difficult task. This paper reports on MBE growth of GaSe, InSe, and GaTe layers and related heterostructures on GaAs(001) substrates by using a Se valve cracking cell and group III metal effusion cells. The sophisticated self-consistent analysis of X-ray diffraction, transmission electron microscopy, and Raman spectroscopy data was used to establish the correlation between growth conditions, formed polytypes and additional phases, surface morphology and crystalline structure of the III–VI 2D layers. The photoluminescence and Raman spectra of the grown films are discussed in detail to confirm or correct the structural findings. The requirement of a high growth temperature for the fabrication of optically active 2D layers was confirmed for all materials. However, this also facilitated the strong diffusion of group III metals in III–VI and III–VI/II–VI heterostructures. In particular, the strong In diffusion into the underlying ZnSe layers was observed in ZnSe/InSe/ZnSe quantum well structures, and the Ga diffusion into the top InSe layer grown at ~450 °C was confirmed by the Raman data in the InSe/GaSe heterostructures. The results on fabrication of the GaSe/GaTe quantum well structures are presented as well, although the choice of optimum growth temperatures to make them optically active is still a challenge.

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Section: Resultsmentioning

confidence: 82%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Figurementioning

confidence: 99%

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Molecular Beam Epitaxy of Layered Group III Metal Chalcogenides on GaAs(001) Substrates

et al. 2020

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Structural and optical properties of quasi-2D GaTe layers grown by molecular beam epitaxy on GaAs (001) substrates

Avdienko

Kolyada

Firsov

et al. 2020

J. Phys.: Conf. Ser.

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Quasi-two-dimensional GaTe layers were grown by molecular beam epitaxy on GaAs (001) substrates at Ts = 450–520°C. The effect of the growth temperature on the GaTe surface morphology has been studied by scanning electron microscopy. It is shown that GaTe layer grown at high Ts = 520°C exhibits pronounced surface relief anisotropy. This sample demonstrates also near band-edge photoluminescence (PL) at T = 11K with the peak energy of ∼1.72 eV, which can be associated with the emission of excitons bound at the acceptor. The nature of 1.45 eV and 1.57 eV peaks appearing in the PL spectra is also discussed in detail.

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Structural properties of ZnSe/InSe/ZnSe heterostructures grown by molecular beam epitaxy on GaAs(001) substrates

Cited by 2 publications

References 11 publications

Molecular Beam Epitaxy of Layered Group III Metal Chalcogenides on GaAs(001) Substrates

Molecular Beam Epitaxy of Layered Group III Metal Chalcogenides on GaAs(001) Substrates

Structural and optical properties of quasi-2D GaTe layers grown by molecular beam epitaxy on GaAs (001) substrates

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