Structural properties of zinc oxide thin films prepared by r.f. magnetron sputtering

Ondo-Ndong, R.; Pascal‐Delannoy, F.; Boyer, Alexandre; Giani, Alain; Foucaran, A.

doi:10.1016/s0921-5107(02)00406-3

Cited by 126 publications

(54 citation statements)

References 16 publications

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“…The film growth rate, depending on the substrate temperature, the oxygen pressure and the filament current of the electron beam, has ranged from 3 to 4 Å.s -1 . In previous studies, ZnO deposition by magnetron sputtering has been investigated and an optimum temperature growth of 100 °C has been found [7,8]. The target was metallic zinc with 99.95 % purity.…”

Section: Methodsmentioning

confidence: 99%

“…Several deposition techniques, e.g. R.F or D.C sputtering [7,8], pulsed laser deposition [9], metal organic chemical vapor deposition (MOCVD) [10], spray pyrolysis [11] and others can be used to grow ZnO thin films on a variety of substrates. Its electrical and optical properties make it highly suitable for many applications in different devices, in particular in the fabrication of acousto-and electro-optical devices [12,13].…”

Section: Introductionmentioning

confidence: 99%

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Structural and optical properties of ZnO fabricated by reactive e‐beam and rf magnetron sputtering techniques

Asmar¹,

Ferblantier²,

Mailly³

et al. 2005

phys. stat. sol. (c)

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Zinc oxide thin films have been grown on (100)-oriented silicon substrate by reactive e-beam evaporation and rf magnetron sputtering techniques and a comparative study is discussed in this paper. Structural, electrical and optical characteristics have been studied before and after annealing in air by measurements of X-ray diffraction, real parts of the dielectric coefficient, and electrical resistivity. X-ray diffraction measurements have shown that ZnO films are highly c-axis-oriented with a full width at half maximum (FWMH) lower than 0.5°. The electrical resistivity is about 1011 Ω.cm for magnetron sputtered films and it increases from 10 -2 Ω.cm to about 10 9 Ω.cm after annealing at 750 °C for electron beam evaporated films. Ellipsometry measurements have shown some improvement of the real dielectric coefficient after annealing treatment at 750 °C of the ZnO evaporated by electron beam. The AFM images show that the surfaces of the e-beam evaporated ZnO and of the sputtered ZnO are relatively smooth.

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Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Structural and optical properties of ZnO fabricated by reactive e‐beam and rf magnetron sputtering techniques

Asmar¹,

Ferblantier²,

Mailly³

et al. 2005

phys. stat. sol. (c)

View full text Add to dashboard Cite

show abstract

“…The unusual reduction in the extent of c-axis preferred orientation in sputtered ZnO films at intermediate temperatures and its subsequent enhancement at higher temperatures has been reported earlier [14], though without much explanation. There are also some reports on ZnO films deposited by sputtering [10,15] and MOCVD [16], showing a strong caxis preferred orientation near room temperature, followed by its reduction with increase in substrate temperature to the range of 150-300°C. In a recent review, Kajikawa [17] has extensively analyzed the issue of preferred orientation in sputtered ZnO films by compiling the relevant experimental observations and explanations put forth for the preferred orientation behaviour.…”

Section: Microstructural Studiesmentioning

confidence: 99%

“…As a deposition technique, sputtering offers several advantages due to its simplicity, versatility and scalability, and has been extensively used for the deposition of ZnO films [4]. Epitaxial ZnO films [5][6][7][8][9] as well as high quality polycrystalline ZnO films on noncrystalline substrates [10][11][12] have been deposited by various forms of sputtering.…”

Section: Introductionmentioning

confidence: 99%

Substrate temperature dependence of growth mode, microstructure and optical properties of highly oriented zinc oxide films deposited by reactive sputtering

et al. 2008

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“…The RF sputtering process has some advantage in terms of: simple low-cost deposition system, absence of toxic/pyrophoric gases from the process and the possibility of sequential deposition of different films in the same system. These advantages have led to several recent research publications focusing on RF sputtering technique as a viable method of preparing dielectric/semiconductor films for MEMS applications (Folta et al 1994;Hurley & Gamble 2003) While RF sputtered piezoelectric films of ZnO are extensively investigated over the past 20 years (Chu et al 2003;Ondo-Ndong et al 2003;Mitsuyu et al 1980), the ferroelectric films of lead zirconate titanate (PZT) and its derivatives are also now being prepared by RF sputtering and their application in MEMS being explored. ZnO films have recently been investigated as a sacrificial layer also in surface micromachining process (Bhatt et al 2005).…”

Section: Introductionmentioning

confidence: 99%

RF sputtering: A viable tool for MEMS fabrication

Chandra

Bhatt

Singh

2009

Sadhana

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Fabrication of Micro-Electro-Mechanical-Systems (MEMS) requires deposition of films such as SiO 2 , Si 3 N 4 , ZnO, polysilicon, phosphosilicate glass (PSG), Al, Cr-Au, Pt, etc. for use as structural, sacrificial, piezoelectric and conducting material. Deposition of these materials at low temperature is desirable for fabricating sensors/actuators on temperature-sensitive substrates and also for integrating MEMS structures on silicon in post-CMOS processing procedures. Plasma enhanced chemical vapour deposition (PECVD) and sputtering are amongst potential techniques for preparing films for MEMS fabrication at comparatively low temperatures. The sputtering technique has an added advantage that the process is carried out in an inert ambient (argon) and chemically sensitive substrate/sacrificial layers can be used in realization of MEMS. Furthermore, the same system can be used for depositing dielectric, piezoelectric and conducting materials as per requirement in the fabrication sequence. This enables rapid low-cost prototyping of MEMS with minimum fabrication facilities.In the present work, we report preparation, characterization and application of RF sputtered SiO 2 , Si 3 N 4 and ZnO films for MEMS fabrication. The effect of RF power, sputtering pressure and target-to-substrate spacing was investigated on the structural and other properties of the films. The residual stress in the films was obtained using wafer curvature measurement technique. The deposition parameters are optimized to obtain low stress films of SiO 2 and Si 3 N 4 . The self-heating of the substrate during deposition was advantageously exploited to obtain highly c-axis oriented films of ZnO without any external heating. A variety of MEMS structures such as cantilever beams, micro-bridges, diaphragms, etc. are demonstrated using bulk, surface and surface-bulk micromachining techniques.

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Structural properties of zinc oxide thin films prepared by r.f. magnetron sputtering

Cited by 126 publications

References 16 publications

Structural and optical properties of ZnO fabricated by reactive e‐beam and rf magnetron sputtering techniques

Structural and optical properties of ZnO fabricated by reactive e‐beam and rf magnetron sputtering techniques

Substrate temperature dependence of growth mode, microstructure and optical properties of highly oriented zinc oxide films deposited by reactive sputtering

RF sputtering: A viable tool for MEMS fabrication

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