Structural properties of the ZnSe/GaAs system grown by molecular-beam epitaxy

Petruzzello, J.; Greenberg, B.; Cammack, D. A.; Dalby, R. J.

doi:10.1063/1.341044

Cited by 159 publications

(44 citation statements)

References 15 publications

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“…and the critical thickness (hc ) for other arrangements of dislocations, including that for complete relaxation of misfit by an array of misfit dislocations [5]. In observations of dislocations in {001} later structures, the equilibrium Lomer array is found only for very large misfits or for h » h c [5,9,10]. Instead, 1/2(110) dislocations form on inclined {111} planes and glide to deposit on interface.…”

Section: Resultsmentioning

confidence: 99%

Study of Misfit Dislocations Profiles in ZnSe/GaAs Structures by Raman Scattering

1993

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In this paper we present the Raman scattering measurements of the ZnSe epilayers grown on (001) GaAs substrate by molecular beam epitaxy method. We have studied dependence of the frequency shift of LO(ZnSe) mode in the Raman spectra vs. thickness of the ZnSe layer. The intensity of LO(ZnSe)/LO(GaAs) ratio vs. orientation angle α of the E vector of the exciting light on the ZnSe/GaAs interface relatively to the sample orientation is presented too.

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Section: Resultsmentioning

confidence: 99%

Study of Misfit Dislocations Profiles in ZnSe/GaAs Structures by Raman Scattering

1993

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“…25,36,37 For example, Petruzello et al 25 found by high-resolution transmission microscopy that most MDs in ZnSe/GaAs (001) were 60°dislocations lying in the interface parallel to h110i directions, but one sample also exhibited kinks at which MDs changed line direction from 110 ½ and 110 Â Ã : Chen et al 36 studied ZnSe/GaAs (001) by transmission electron microscopy and also found that most MDs were parallel to h110i directions in the interface, but they also observed some irregular dislocations tending along [100] and [010] directions. An important underlying assumption here is that dislocations are predominantly of 60°t ype on {111} glide planes, and that dislocations with other geometries have a negligible effect on the observed x-ray diffraction profiles.…”

Section: Methodsmentioning

confidence: 97%

“…24 However, the total thickness of the ZnSe buffer was chosen so that it would be less than the experimentally determined critical layer thickness. 25,26 The graded ZnS y Se 1Ày was grown at 360°C with 39 mW/cm 2 photoirradiation. (A neutral density filter with 63% transmission was used.)…”

Section: Methodsmentioning

confidence: 99%

Asymmetric Dislocation Densities in Forward-Graded ZnS y Se1−y /GaAs (001) Heterostructures

Ocampo

Bertoli

Rago

et al. 2010

Journal of Elec Materi

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We report an experimental and modeling study of ZnS y Se 1Ày /GaAs (001) structures, all of which comprised a uniform top layer of ZnS 0.014 Se 0.986 grown on a compositionally graded buffer layer or directly on the GaAs substrate. High-resolution x-ray diffraction was used to estimate dislocation densities on type A slip systems, with misfit dislocation (MD) line segments oriented along the ½1 " 10 direction, and type B slip systems, with MD line segments oriented along a [110] direction. A control sample having no graded buffer exhibits equal dislocation densities on the two types of slip systems (D A % D B % 1.5 9 10 8 cm À2 ), but a forward-graded (FG) structure (grading coefficient of 27 cm À1 ) exhibits 20% more dislocations on the type B slip systems (D A % 1.6 9 10 8 cm À2 and D B % 1.9 9 10 8 cm À2 ) and a steep forwardgraded structure (grading coefficient of 54 cm À1 ) exhibits 50% more type B dislocations (D A % 2 9 10 8 cm À2 and D B % 3 9 10 8 cm À2 ). The insertion of an overshoot interface reduced the dislocation densities in the uniform top layer by promoting annihilation and coalescence reactions, but type B dislocations were removed more effectively. Based on equilibrium calculations the overshoot graded layer in the steep graded overshoot structure is expected to exhibit large compressive and tensile strains, with a reversal in the sign of the strain near its middle, which may promote annihilation and coalescence reactions between threading dislocations.

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“…The total thickness of the two ZnSe buffer layers was varied from 135 to 270 nm, in order to span the pseudomorphic/ nonpseudomorphic transition. 22 ZnSySe1_y was grown on top of the ZnSe buffer layers at a temperature of 360 or 400~ and with the incident irradiation intensity adjusted to 36 mW/cm 2 or 12 mW/cm 2, for a growth time of 45 min. The reactant mole fractions were 10 4 (DMZn), 2 to 4 • 10 -~ (DMSe) and 0 to 6 • 10 4 (DES).…”

Section: Methodsmentioning

confidence: 99%

Structural properties of ZnSy Se1−yZnSe/GaAs (001) heterostructures grown by photoassisted metalorganic vapor phase epitaxy

Zhang

Kalisetty

Robinson

et al. 1997

Journal of Elec Materi

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ZnS Se~/ZnSe/GaAs (001) heterostructures have been grown by photoassisted metalorganic vapor phase epitaxy, using the sources dimethylzinc, dimethylselenium, diethylsulfur, and irradiation by a Hg arc lamp. The solid phase composition vs gas phase composition characteristics have been determined for ZnSySe~ ~ grown with different mole fractions of dimethylselenium and different temperatures. Although the growth is not mass-transport controlled with respect to the column VI precursors, the solid phase composition vs gas phase composition characteristics are sufficiently gradual so that good compositional control and lattice matching to GaAs substrates can be readily achieved by photoassisted growth in the temperature range 360~ < T < 400~ ZnSe/GaAs (001) single heterostructures were grown by a two-step process with ZnSe thicknesses in the range from 54 nm to 776 nm. Based on 004 x-ray rocking curve full width at half maximums (FWHMs), we have determined that the critical layer thickness is h c <200 nm. Using the classical method involving strain, lattice relaxation is undetectable in layers thinner than 270 nm for the growth conditions used here. Therefore, the rocking curve FWHM is a more sensitive indicator of lattice relaxation than the residual strain. For ZnS Sel. o .. y .--3 layers grown on ZnSe buffers at 400 C, the measured dislocation densitythickness product Dh increases monotonically with the room temperature mismatch. Lower values of the Dh product are obtained for epitaxy on 135 nm buffers compared to the case of 270 nm buffers 9 This difference is due to the fact that the 135 nm ZnSe buffers are pseudomorphic as deposited For ZnS Se 1 9 , . " , Y . -Y layers grown on 135 nm ZnSe buffers at 360~ the minimum dislocation density corresponds approximately to room-temperature lattice matching (y --5.9%), rather than growth temperature lattice matching (y = 7.6%) 9 Epitaxial layers with lower dislocation densities demonstrated superior optical quality, as judged by the near-band edge/deep level emission peak intensity ratio and the near band edge absolute peak intensity from 300K photoluminescence measurements.

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Structural properties of the ZnSe/GaAs system grown by molecular-beam epitaxy

Cited by 159 publications

References 15 publications

Study of Misfit Dislocations Profiles in ZnSe/GaAs Structures by Raman Scattering

Study of Misfit Dislocations Profiles in ZnSe/GaAs Structures by Raman Scattering

Asymmetric Dislocation Densities in Forward-Graded ZnS y Se1−y /GaAs (001) Heterostructures

Structural properties of ZnSy Se1−yZnSe/GaAs (001) heterostructures grown by photoassisted metalorganic vapor phase epitaxy

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