Structural properties of the graphene-SiC(0001) interface as a key for the preparation of homogeneous large-terrace graphene surfaces

Riedl, Christian; Starke, Ulrich; Bernhardt, J.; Franke, Martin; Heinz, K.

doi:10.1103/physrevb.76.245406

Cited by 352 publications

(470 citation statements)

References 31 publications

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“…2,23 Figure 1b is the STM image of a boundary between monolayer (ML) and bilayer (BL) graphene, clearly showing moiré pattern and atomic lattice of graphene with a background due to the   30 ) 3 6 3 6 ( R reconstructed buffer layer. 24 The BL graphene appears much smoother than the ML. Because the graphene layer is formed through the graphitization of SiC (0001), a ML-BL boundary almost always coincides with an underlying substrate step.…”

Section: Graphene Domain Boundaries On Sicmentioning

confidence: 99%

Spatially Resolved Mapping of Electrical Conductivity across Individual Domain (Grain) Boundaries in Graphene

et al. 2013

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All large-scale graphene films contain extended topological defects dividing graphene into domains or grains. Here, we spatially map electronic transport near specific domain and grain boundaries in both epitaxial graphene grown on SiC and CVD graphene on Cu subsequently transferred to a SiO 2 substrate, with one-to-one correspondence to boundary structures.Boundaries coinciding with the substrate step on SiC exhibit a significant potential barrier for electron transport of epitaxial graphene due to the reduced charge transfer from the substrate near the step edge. Moreover, monolayer-bilayer boundaries exhibit a high resistance that can change depending on the height of substrate step coinciding at the boundary. In CVD graphene, the resistance of a grain boundary changes with the width of the disordered transition region between adjacent grains. A quantitative modeling of boundary resistance reveals the increased electron Published in ACS Nano 7, 7956 (2013).

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Section: Graphene Domain Boundaries On Sicmentioning

confidence: 99%

Spatially Resolved Mapping of Electrical Conductivity across Individual Domain (Grain) Boundaries in Graphene

et al. 2013

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“…The structure of EG was confi rmed by in situ low energy electron diffraction (LEED), STM, and photoemission spectroscopy (PES) [76]. Since the characteristic STM images of carbon nanomesh and single layer graphene are quite different, the appearance of single layer EG can be detected by monitoring the phase evolution from carbon nanomesh to graphene by in situ STM during the thermal annealing of SiC [76,79]. However, the STM images for single layer and bilayer EG on SiC are very similar.…”

Section: Nano Researchmentioning

confidence: 99%

Raman spectroscopy and imaging of graphene

et al. 2008

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Graphene has many unique properties that make it an ideal material for fundamental studies as well as for potential applications. Here we review recent results on the Raman spectroscopy and imaging of graphene. We show that Raman spectroscopy and imaging can be used as a quick and unambiguous method to determine the number of graphene layers. The strong Raman signal of single layer graphene compared to graphite is explained by an interference enhancement model. We have also studied the effect of substrates, the top layer deposition, the annealing process, as well as folding (stacking order) on the physical and electronic properties of graphene. Finally, Raman spectroscopy of epitaxial graphene grown on a SiC substrate is presented and strong compressive strain on epitaxial graphene is observed. The results presented here are highly relevant to the application of graphene in nano-electronic devices and help in developing a better understanding of the physical and electronic properties of graphene.

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“…[56][57][58] It can be decoupled to form a quasi-freestanding bilayer graphene (QFS-bilayer) through hydrogen atoms intercalation. 59 The intercalating atoms diffuse underneath the buffer layer and bound themselves to the topmost Si atoms of the SiC substrate converting the buffer layer to a mostly sp2-hybridized monolayer graphene.…”

Section: Introductionmentioning

confidence: 99%

Step-edge-induced resistance anisotropy in quasi-free-standing bilayer chemical vapor deposition graphene on SiC

Ciuk

Çakmakyapan

Özbay

et al. 2014

Journal of Applied Physics

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The transport properties of quasi-free-standing (QFS) bilayer graphene on SiC depend on a range of scattering mechanisms. Most of them are isotropic in nature. However, the SiC substrate morphology marked by a distinctive pattern of the terraces gives rise to an anisotropy in graphene's sheet resistance, which may be considered an additional scattering mechanism. At a technological level, the growth-preceding in situ etching of the SiC surface promotes step bunching which results in macro steps ∼ 10? nm in height. In this report, we study the qualitative and quantitative effects of SiC steps edges on the resistance of epitaxial graphene grown by chemical vapor deposition. We experimentally determine the value of step edge resistivity in hydrogen-intercalated QFS-bilayer graphene to be ∼ 190? Ωμ m for step height hS? =? 10? nm and provide proof that it cannot originate from mechanical deformation of graphene but is likely to arise from lowered carrier concentration in the step area. Our results are confronted with the previously reported values of the step edge resistivity in monolayer graphene over SiC atomic steps. In our analysis, we focus on large-scale, statistical properties to foster the scalable technology of industrial graphene for electronics and sensor applications. © 2014 AIP Publishing LLC

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Structural properties of the graphene-SiC(0001) interface as a key for the preparation of homogeneous large-terrace graphene surfaces

Cited by 352 publications

References 31 publications

Spatially Resolved Mapping of Electrical Conductivity across Individual Domain (Grain) Boundaries in Graphene

Spatially Resolved Mapping of Electrical Conductivity across Individual Domain (Grain) Boundaries in Graphene

Raman spectroscopy and imaging of graphene

Step-edge-induced resistance anisotropy in quasi-free-standing bilayer chemical vapor deposition graphene on SiC

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