Structural properties of amorphous silicon prepared from hydrogen-diluted silane

Zeman, Miro; Elzakker, G. van; Tichelaar, F.D.; Šutta, P.

doi:10.1080/14786430902960137

Cited by 31 publications

(23 citation statements)

References 32 publications

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“…XRD patterns were collected from 25 to 65 degrees (θ − θ ) and from 25 to 75 degrees (ω − 2θ ), [15]. In order to identify the phase composition and basic microstructure parameters (crystallite sizes and micro-strains) of the films Crystallite sizes and micro-strains were evaluated by procedures based on the Voigt function [16,17,18]. UV VIS spectrophotometry was used to obtain additional microstructural (void volume fraction) and optical parameters of the films (refractive indices, absorption coefficients, optical band gap energies).…”

Section: Methodsmentioning

confidence: 99%

Optical properties of zinc titanate perovskite prepared by reactive RF sputtering

Müllerová

Šutta

Medlín

et al. 2017

Journal of Electrical Engineering

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In this paper we report results from optical transmittance spectroscopy complemented with data on structure from XRD measurements to determine optical properties of a series of ZnTiO 3 perovskite thin films deposited on glass by reactive magnetron co-sputtering. The members of the series differ by the titanium content that was revealed as an origin of the changes not only in structure but also in dispersive optical properties. Low porosity has been discovered and calculated using the Bruggeman effective medium approximation. An apparent blue-shift of the optical band gap energies with increasing titanium content was observed. The observed band gap engineering is a good prospective for eg optoelectronic and photocatalytic applications of ZnTiO 3 .

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Section: Methodsmentioning

confidence: 99%

Optical properties of zinc titanate perovskite prepared by reactive RF sputtering

Müllerová

Šutta

Medlín

et al. 2017

Journal of Electrical Engineering

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“…The only evidence of structure changes is the shift of the broad 2 peaks at ∼ 28 degrees with increasing deposition temperature that can be assigned to the ordered Si 4 H regions similarly as observed in [5]. These structure features can be considered responsible for the sample inhomogeneities.…”

Section: Structure By Xrd Measurementsmentioning

confidence: 94%

“…The standard position of diffraction lines of crystalline Si and ordered domains of Si 4 H of tetragonal lattice structure are included in Fig. 1 for the purpose of comparison [5,6].…”

Section: Structure By Xrd Measurementsmentioning

confidence: 99%

“…displays, thin-film LEDs, imaging devices, photo sensors etc. and especially devices based on the solar energy conversion [1][2][3][4][5][6][7]. During plasma enhanced chemical vapour deposition (PECVD) hydrogen dilution of silane results in an inhomogeneous growth during which the material evolves from amorphous hydrogenated silicon (a-Si:H) to microcrystalline hydrogenated silicon (µc-Si:H).…”

Section: Introductionmentioning

confidence: 99%

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Influence of deposition temperature on amorphous structure of PECVD deposited a-Si:H thin films

Müllerová¹,

Fischer²,

Netrvalová³

et al. 2011

Open Physics

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Abstract:The effect of deposition temperature on the structural and optical properties of amorphous hydrogenated silicon (a-Si:H) thin films deposited by plasma-enhanced chemical vapour deposition (PECVD) from silane diluted with hydrogen was under study. The series of thin films deposited at the deposition temperatures of 50 − 200°C were inspected by XRD, Raman spectroscopy and UV Vis spectrophotometry. All samples were found to be amorphous with no presence of the crystalline phase. Ordered silicon hydride regions were proved by XRD. Raman measurement analysis substantiated the results received from XRD showing that with increasing deposition temperature silicon-silicon bond-angle fluctuation decreases. The optical characterization based on transmittance spectra in the visible region presented that the refractive index exhibits upward trend with increasing deposition temperature, which can be caused by the densification of the amorphous network. We found out that the scale factor of the Tauc plot increases with the deposition temperature. This behaviour can be attributed to the increasing ordering of silicon hydride regions. The Tauc band gap energy, the iso-absorption value their difference were not particularly influenced by the deposition temperature. Improvements of the microstructure of the Si amorphous network have been deduced from the analysis.

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“…The total thickness of the complete cell is the same as for a single junction solar cell, but each component cell is thinner and therefore less sensitive to the light-induced defects. Another way to minimize the Staebler-Wronski effect is to develop an amorphous silicon material that is more stable against light exposure [5].…”

Section: Thin-film Silicon Solar Cell Structuresmentioning

confidence: 99%

Thin-Film Silicon PV Technology

Zeman¹

2010

Journal of Electrical Engineering

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Thin-film silicon solar cell technology is one of the promising photovoltaic technologies for delivering low-cost solar electricity. Today the thin-film silicon PV market ( 402 MWp produced in 2008) is dominated by amorphous silicon based modules; however it is expected that the tandem amorphous/microcrystalline silicon modules will take over in near future. Solar cell structures based on thin-film silicon for obtaining high efficiency are presented. In order to increase the absorption in thin absorber layers novel approaches for photon management are developed. Module production and application areas are described.

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Structural properties of amorphous silicon prepared from hydrogen-diluted silane

Cited by 31 publications

References 32 publications

Optical properties of zinc titanate perovskite prepared by reactive RF sputtering

Optical properties of zinc titanate perovskite prepared by reactive RF sputtering

Influence of deposition temperature on amorphous structure of PECVD deposited a-Si:H thin films

Thin-Film Silicon PV Technology

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