1984
DOI: 10.1016/0375-9601(84)90219-6
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Structural phase transitions in Si and Ge under pressures up to 50 GPa

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Cited by 388 publications
(184 citation statements)
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“…The hydrostatic transition pressures (call P hydro hereafter) are 11.4 GPa and 13.7 GPa for the diamond-to-βSn and βSn-to-sh transitions respectively. These are consistent with previous studies [13,14] . In the present studies, we did not include a phase of space group Imma which have been identified, both experimentally [15] and theoretically [14,16] , to be stable between the βSn and sh phases.…”
Section: Results At Hydrostatic Conditionsupporting
confidence: 94%
See 1 more Smart Citation
“…The hydrostatic transition pressures (call P hydro hereafter) are 11.4 GPa and 13.7 GPa for the diamond-to-βSn and βSn-to-sh transitions respectively. These are consistent with previous studies [13,14] . In the present studies, we did not include a phase of space group Imma which have been identified, both experimentally [15] and theoretically [14,16] , to be stable between the βSn and sh phases.…”
Section: Results At Hydrostatic Conditionsupporting
confidence: 94%
“…2. They are in good agreement with the experimental and previous theoretical results [13,14] . Within the pressure ranges we considered in this study, i.e.…”
Section: Results At Hydrostatic Conditionsupporting
confidence: 92%
“…Changes in near edge region are observed above 11 GPa because of a structural transition from a cubic diamond phase to a tetragonal β-Sn phase [8][9][10] . The large energy decrease (∼ 1 eV) around 11 GPa in the pressure evolution of the absorption edge in Fig.2 (b), is consistent with the semiconductor to metal transition occurring simultaneously with the structural transformation [8][9][10] . The EXAFS signal χ(k), was obtained by subtracting the embedded-atom absorption background from the measured absorption coefficient and normalizing by the edge step.…”
Section: Experimental Results and Quantitative Data Analysismentioning
confidence: 99%
“…Crystalline Ge was chosen as a reference system since the structural transition observed at approximately 11 GPa has been widely investigated [8][9][10] . We demonstrate that the use of ND addresses the problem caused by diamond glitches.…”
Section: Introductionmentioning
confidence: 99%
“…Apart from aluminum, for which the fcc structure remains unchanged up to 100 GPa at room temperature, a phase transformation from diamond Si to ¢Sn at around 12 GPa has been corroborated according to the literature (Duclos et al, 43) Yang et al, 44) Bundy, 45) Voronin et al, 46) Olijnyk et al, 48) Yin et al, 50) and McMahon et al 71) ). In this case, Fig.…”
Section: Siliconmentioning
confidence: 59%