Structural phase modification in Cu incorporated nanostructured zinc sulfide thin films

Effect of oxygen pressure on the structural and optical properties of BaSnO3 films prepared by pulsed laser deposition method

“…Where λ is the wavelength of the X-ray radiation, k is a constant which can be taken as 0. The factors such as the internal stress, thermal stress, strain and lattice distortion in the films can broaden the XRD peaks and hence the crystallite size estimated using the Scherer formula can be smaller than the actual value of the crystalline size [31,32]. The Williamson-Hall relation can be used to study the effect of strain induced broadening of crystallite size in the full width at half maximum (FWHM) of XRD peaks [33] and it is shown in Fig.2c.…”

“…where d is the thickness of the film and T is the transmittance of the film. The band gap energy g E of the can be estimated from the following relation [32] ( ) (…”

“…The values of n for direct allowed and direct forbidden transitions will be ½ and 3/2 respectively. For the indirect allowed and indirect forbidden transitions n can take values 2 and 3 respectively [32,42,43]. The band gap is determined for all the films from the plot of ( ) n 1 α versus photon energy ν h on the xaxis by extrapolating the linear portion of the graph to the 0 = ν h .…”

Effect of RF Power on the Structural and Optical Properties of Zinc Sulfide Films

“…The presence of more sharp and well-defined Raman bands in the Z150 film compared to the Z120 and Z180 films indicates the enhanced crystalline nature of this film, as revealed in the XRD results. The intense Raman band at ~348 cm -1 can be assigned to the longitudinal optical (LO) phonon [7,8,32,33], and the medium intensity band ~266 cm -1 can be assigned to the transverse optical (TO) phonon [7,8,33]. The Raman bands at approximately 140 cm -1 and 171 cm -1 can be attributed to the disorderactivated, second-order acoustic phonons [7,8,34,35].…”

“…ZnS thin films can be prepared using various techniques, such as sputtering [7][8][9][10][11], metal organic chemical vapor deposition [12], molecular beam epitaxy [13], atomic layer epitaxy [14], sol-gel [15] and pulsed laser deposition [16]. Among these techniques, radio frequency (RF) magnetron sputtering is a relatively simple and costeffective technique for the preparation of ZnS films [17].…”