Structural peculiarities of 0.67 Pb(Mg1/3Nb2/3)O3–0.33 PbTiO3 thin films grown directly on SrTiO3 substrates

Non-stoichiometry and its implications for the properties of PMN–PT thin films

“…Extensive Pb loss will result in the formation of Pb-deficient pyrochlore phases, which do not exhibit the desired functional properties and should therefore be avoided. In pulsed-laser deposition (PLD), the formation of 3 these secondary phases is more often than not circumvented by adjusting the process parameters [11][12][13][14][15][16][17] and/or making use of Pb-enriched targets [11,13,18]. While there are reports on pyrochlore-free films grown using stoichiometric targets [17,[19][20][21], the results are often not reproducible and the processes are limited to certain substrates.…”

Energy Storage and Leakage Current Characteristics of Low-Temperature-Derived Pb0.8La0.1Ca0.1Ti0.975O3 Thin Films Tailored by an Annealing Atmosphere

“…This finding has also been reported in the (Pb 0.9 La 0.1 )­Ti 0.975 O 3 and (Pb 0.76 Ca 0.24 )­TiO 3 films, as well as the (Pb,La)­TiO 3 /(Pb,Ca)­TiO 3 multilayer film. ,, Moreover, apparently, compared with that of the phase-pure PLCT@O 2 thin film, some detectable secondary phases, e.g., PbO x and pyrochlore PbTi 3 O 7 phases, are observed in the PLCT@air and PLCT@N 2 thin films. As is known to all, due to the volatility and valence fluctuation of lead, it is easy to produce some secondary phases in the lead-based thin films responsible for a high charge defect concentration, − , as discussed below in this study, which contributes to an increased leakage current and thus affects the leakage mechanism and ferroelectric and dielectric properties of PLCT thin films.…”

“…Among these currently known lead-based ferroelectrics, one of particular interest is a La/Ca-modified PbTiO 3 [(La/Ca,Pb)­TiO 3 ] thin film due to its enhanced electrical properties, including a large piezoelectric constant and polarization, a high pyroelectric coefficient and electrocaloric coefficient, as well as a significant photovoltaic current. − These features allow it to have great potential in the applications of various electronic devices, such as memories, microelectromechanical systems (MEMS), cooling devices, photoelectric sensors, and so on. ,,, At present, however, current applications of (La/Ca,Pb)­TiO 3 thin films are still limited due to the difficulties in controlling the film’s electrical quality. For instance, it is a great challenge to eradicate deteriorative impure phases and growth defects in (La/Ca,Pb)­TiO 3 films, such as pyrochlore phase and − cation/anion vacancy, − due to the volatility of lead oxide and the fluctuated valence of a Pb ion. These impure phases and growth defects are apt to induce a high leakage current in a (La/Ca,Pb)­TiO 3 thin film, which will essentially “wipe out” the ferroelectric polarization and its associated electrical properties.…”

Synthesis, Giant Dielectric, and Pyroelectric Response of [001]-Oriented Pr3+ Doped Pb(Mg1/3Nb2/3)O3-PbTiO3 Ferroelectric Nano-Films Grown on Si Substrates

“…As shown in Figure 1a,c, α 001 values are 86.6% and 73.6% in Pr-PMN-PT thin films annealed at 650 °C for 2 and 3 min respectively, presenting the highly (001)-oriented textured structure. The preferred orientation was related to many factors, such as substrate materials [33], growth method, doping elements [31], annealing temperatures [34], and so forth. For Pr-PMN-PT thin films, the nucleation was in random direction at the start of thin film growth on the surface of Pt.…”