Structural Origins of Light-Induced Phase Segregation in Organic-Inorganic Halide Perovskite Photovoltaic Materials

Beal, Rachel E.; Hagström, Nanna Zhou; Barrier, Julien; Gold‐Parker, Aryeh; Prasanna, Rohit; Bush, Kevin A.; Passarello, Donata; Schelhas, Laura T.; Brüning, Karsten; Tassone, Christopher J.; Steinrueck, Hans-Georg; McGehee, Michael D.; Toney, Michael F.; Nogueira, Ana Flávia

doi:10.1016/j.matt.2019.11.001

Cited by 136 publications

(173 citation statements)

References 44 publications

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“…This is exemplified by double-and triple-cation systems such as FA 0.83 Cs 0.17 Pb(I 1-x Br x ) 3 and FA 0.79 MA 0.15 Cs 0.06 Pb(I 1-x Br x ) 3 , which require significantly longer illumination times to completely redshift their PL spectra [70,71]. Other stable mixed cation/mixed halide compositions have also been reported [11,12,69]. In general, these observations are not well understood and remain fully empirical in nature.…”

Section: Choice Of Cationmentioning

confidence: 98%

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Photoinduced Anion Segregation in Mixed Halide Perovskites

Brennan

Ruth²,

Kamat

et al. 2020

Trends in Chemistry

149

237

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Section: Choice Of Cationmentioning

confidence: 98%

“…This is supported by pXRD measurements of x b 0. [69] recently showed photostability of FA y Cs 1-y Pb(I 1-x Br x ) 3 thin films with mixed α/β-phase structures. However, they also found that crystal phase is not the sole determining factor behind photostability.…”

Section: Photoinduced Loss Of I -mentioning

confidence: 99%

Photoinduced Anion Segregation in Mixed Halide Perovskites

Brennan

Ruth²,

Kamat

et al. 2020

Trends in Chemistry

149

237

View full text Add to dashboard Cite

“…This heterogeneity, however, is very important as it has been suggested that this strongly impacts photostability and environmental stability. [23,54,55]…”

Section: Crystallization During Thermal Annealingmentioning

confidence: 99%

Impact of Processing on Structural and Compositional Evolution in Mixed Metal Halide Perovskites during Film Formation

Abdelsamie

Bruening

et al. 2020

Adv Funct Materials

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Understanding crystallization processes and their pathways in metal‐halide perovskites is of crucial importance as this strongly affects the film microstructure, its stability, and device performance. While many approaches are developed to control perovskite formation, the mechanisms of film formation are still poorly known. Using time‐resolved in situ grazing incidence wide‐angle X‐ray scattering, the film formation of perovskites is investigated with average stoichiometry Cs0.15FA0.85PbI3, where FA is formamidinium, using the popular antisolvent dropping and gas jet treatments and this is contrasted with untreated films. i) The crystallization pathways during spin coating, ii) the subsequent postdeposition thermal annealing, and iii) crystallization during blade coating are studied. The findings reveal that the formation of a nonperovskite FAPbI3 phase during spin coating is initially dominant regardless of the processing and that the processing treatment (e.g., antisolvent dropping, gas jet) has a significant impact on the as‐cast film structure and affects the phase evolution during subsequent thermal treatment. It is shown that blade coating can be used to overcome the nonperovskite phase formation via solvothermal direct crystallization of perovskite phase. This work shows how real‐time investigation of perovskite formation can help to establish processing–microstructure–functionality relationships.

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“…[ 72,74,79,80,88–90 ] All these factors result in a larger open‐circuit‐voltage ( V OC ) deficit (defined by E g /q − V OC ) for wide‐bandgap PSCs (>≈0.5 V) as compared to state‐of‐the‐art low‐bandgap PSCs (≈0.35–0.4 V), negating a linear increase of V OC with increasing bandgap. [ 3,52 ] We would like to stress that the relative contribution of the above mentioned factors to the V OC deficit is a complicated function of the exact perovskite composition, [ 69,72,91 ] film surface nature, [ 78,84,90 ] defect density as well as the charge extraction layers employed. [ 79,86,87 ] One popular approach to reduce the V OC deficit is to deposit a large organic cation on the surface of a 3D perovskite film, which acts as a 2D passivation agent and/or improves the energetic alignment with the charge transport layer.…”

Section: Introductionmentioning

confidence: 99%

2D/3D Heterostructure for Semitransparent Perovskite Solar Cells with Engineered Bandgap Enables Efficiencies Exceeding 25% in Four‐Terminal Tandems with Silicon and CIGS

Gharibzadeh

Hossain

Faßl

et al. 2020

Adv Funct Materials

129

118

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Wide-bandgap perovskite solar cells (PSCs) with optimal bandgap (E g ) and high power conversion efficiency (PCE) are key to high-performance perovskite-based tandem photovoltaics. A 2D/3D perovskite heterostructure passivation is employed for double-cation wide-bandgap PSCs with engineered bandgap (1.65 eV ≤ E g ≤ 1.85 eV), which results in improved stabilized PCEs and a strong enhancement in open-circuit voltages of around 45 mV compared to reference devices for all investigated bandgaps. Making use of this strategy, semitransparent PSCs with engineered bandgap are developed, which show stabilized PCEs of up to 25.7% and 25.0% in fourterminal perovskite/c-Si and perovskite/CIGS tandem solar cells, respectively. Moreover, comparable tandem PCEs are observed for a broad range of perovskite bandgaps. For the first time, the robustness of the four-terminal tandem configuration with respect to variations in the perovskite bandgap for two state-of-the-art bottom solar cells is experimentally validated.

show abstract

Structural Origins of Light-Induced Phase Segregation in Organic-Inorganic Halide Perovskite Photovoltaic Materials

Cited by 136 publications

References 44 publications

Photoinduced Anion Segregation in Mixed Halide Perovskites

Photoinduced Anion Segregation in Mixed Halide Perovskites

Impact of Processing on Structural and Compositional Evolution in Mixed Metal Halide Perovskites during Film Formation

2D/3D Heterostructure for Semitransparent Perovskite Solar Cells with Engineered Bandgap Enables Efficiencies Exceeding 25% in Four‐Terminal Tandems with Silicon and CIGS

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