Structural, optical, FTIR and photoluminescence studies of CdS1−xSex thin films by chemical bath deposition method

Simplistic construction of cadmium sulfoselenide thin films via a hybrid chemical process for enhanced photoelectrochemical performance

“…Seven diffraction peaks correspond to (002), (101), (102), (110), (103), ( 200) and (112) at 2q 26.02 , 28.40 , 31.13 , 42.80 , 44.93 , 50.89 and 52.07 of the pure hexagonal crystal structure. All diffraction peak positions are consistent with other reported data, 42,43 conrming the formation of a pure phase material. The observed d-values are in good agreement with standard d-values from the JCPDS data card (49-1459) (Table 3).…”

Effect of oxidation on structural, optical and electrical properties of CdS thin films grown by sputtering

“…The weak bands observed at 1647 cm -1 is due to the bending vibration of CdS. The presence of the weak absorption band observed at 2859 cm −1 and 2927 cm −1 are due to the Cd-O vibrations [19,20]. From these FTIR studies, it is confirmed that O 2 is substituted into the Cd-S lattice.…”

Studies on structural, optical, and photoelectric properties of CdS1-xSexfilms fabricated by selenization of chemical bath deposited CdS films

“…CdS 1– x Se x film with tunable band gap between 1.72 (for CdSe) and 2.42 eV (for CdS) will be a good choice to enhance both light absorption and photoactivity. Many efforts have been made to prepare CdS 1– x Se x film, such as epitaxial growth , spray pyrolysis , evaporation , laser ablation technique , and chemical bath deposition (CBD) . Among these techniques, chemical bath deposition is considered to be a promising method because it is a simple and economical technique.…”

“…This will bring some difficulties to the mass production. In addition, from the literatures [13][14][15][16][17], it seems that obtaining CdS 1-x Se x film with compact surface and large grains is difficult. The compactness of the film and large grains are basically promise the excellent electrical properties of polycrystalline semiconductor films.…”