Structural, optical and thermoelectric properties of Al-doped ZnO thin films prepared by spray pyrolysis

Ambedkar, Anit K.; Singh, M. P.; Kumar, Vipin; Kumar, Virendra; Singh, Beer; Kumar, Ashwani; Gautam, Yogendra K.

doi:10.1016/j.surfin.2020.100504

Cited by 54 publications

(23 citation statements)

References 47 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The development of alternative materials with low cost and high mobility is necessary. Among all materials, aluminum-doped zinc oxide (Al:ZnO) is the most widely researched n-type TCOs owing to its excellent properties similar to ITO and comparability to various deposition techniques, such as sputter [13], spray pyrosis [14], plasma enhanced chemical vapor deposition [15], and pulsed laser deposition [16]. However, the Al:ZnO is generally used as an interconnection layer in optoelectronics, such as tandem thin film solar cells and polymer solar cells, but not used as an electrode since the ITO still outperform Al:ZnO in this aspect.…”

Section: Introductionmentioning

confidence: 99%

Air Annealing Effect on Oxygen Vacancy Defects in Al-doped ZnO Films Grown by High-Speed Atmospheric Atomic Layer Deposition

Hsu

Geng

et al. 2020

Molecules

View full text Add to dashboard Cite

In this study, aluminum-doped zinc oxide (Al:ZnO) thin films were grown by high-speed atmospheric atomic layer deposition (AALD), and the effects of air annealing on film properties are investigated. The experimental results show that the thermal annealing can significantly reduce the amount of oxygen vacancies defects as evidenced by X-ray photoelectron spectroscopy spectra due to the in-diffusion of oxygen from air to the films. As shown by X-ray diffraction, the annealing repairs the crystalline structure and releases the stress. The absorption coefficient of the films increases with the annealing temperature due to the increased density. The annealing temperature reaching 600 °C leads to relatively significant changes in grain size and band gap. From the results of band gap and Hall-effect measurements, the annealing temperature lower than 600 °C reduces the oxygen vacancies defects acting as shallow donors, while it is suspected that the annealing temperature higher than 600 °C can further remove the oxygen defects introduced mid-gap states.

show abstract

Section: Introductionmentioning

confidence: 99%

Air Annealing Effect on Oxygen Vacancy Defects in Al-doped ZnO Films Grown by High-Speed Atmospheric Atomic Layer Deposition

Hsu

Geng

et al. 2020

Molecules

View full text Add to dashboard Cite

show abstract

“…To obtain the energy band gap, optical absorption measurements were carried out to produce the energy band gap of the ZnO thin film. The band gap energy of ZnO thin film is calculated using the following formula [19]: (1) where B denotes the value of the constant coefficient, α is the absorption coefficient value, Eg is the energy band gap, hv is the energy of the photon, n is the index of determines the character of optical absorption. graphed the relationship between the absorption coefficient (α) and the photon energy (hv) for the direct transition is (αhv) 2 = hv -Eg, The Eg value indicates the energy band gap of the thin film.…”

Section: Optical Band Gap Measurementsmentioning

confidence: 99%

“…ZnO also has a large excitation binding energy of 60 meV. [1]. ZnO has many applications such as light emitting diodes [2], field-effect transistors [3], gas sensors [4], photodiode ( [5], solar cell [6], Photocatalys [7].…”

Section: Introductionmentioning

confidence: 99%

Analysis of the optical properties of ZnO thin films deposited on a glass substrate by the So-gel method

Amananti

Ardiyanto

Sutanto

et al. 2022

J. Nat. Scien. & Math. Res.

View full text Add to dashboard Cite

Zinc oxide (ZnO) has attracted the attention of researchers as a photocatalyst material, because ZnO has a wide direct band gap (3.37 eV) and is a semiconductor material with a large excitation binding energy (60 meV). ZnO is a photocatalyst that has many advantages, namely cheap, non-toxic, and theoretically very active under UV irradiation. The most interesting thing about ZnO semiconductor compared to other semiconductors is that ZnO can absorb most of the solar spectrum. However, there is a weakness of the ZnO semiconductor, namely the very fast recombination of charge carriers and the ZnO semiconductor has a low efficiency in the visible region which causes the ZnO semiconductor to have a wide band gap. that is the weakness of ZnO. it is necessary to choose the right method to overcome this deficiency of ZnO. one way that can be done is to increase the photocatalytic ability of zinc oxide, it is necessary to develop it in the manufacture of thin films. The method used in the manufacture of Thin Film is using the sol-gel spray coating method. the first stage is through the manufacture of ZnO precursors by dissolving zinc acetate dehydrate with isopropanol solvent through stirring. then the second stage by adding Monoethanolamine. This stirring lasted for 30 minutes at a temperature of 70°C, the precursor concentration was prepared with three different concentrations which included concentrations of 0.1, 0.3, and 0.5 M. ZnO precursor deposited on the substrate glass is blown at 400 °C. Optical properties are carried out by recording the transmittance and absorbance which are affected by increasing concentrations. The optical transmission spectra show that the transmission increases with decreasing concentration and the maximum transmission in the visible region is about 90% for ZnO thin films prepared with 0.1 M. The optical band gap value produced by the thin film of 0.1 M precursor concentration resulted in an energy band gap of 3.11 eV; thin films of 0.3 M precursor concentration produced an energy band gap of 3.07 eV; and thin film of 0.5M precursor concentration produced an energy band gap of 3.06 eV.©2022 JNSMR UIN Walisongo. All rights reserved.

show abstract

“…In this regard, the sol-gel method for fabrication of TCOs has attracted much attention of the industry due to its simplicity, low cost, capability in control of doping level, the possibility of homogeneous large-area thin-film preparation, and ability in achieving atomic-scale thin films. [5,12,[20][21][22][23][24][25] Although the sol-gel method has not yet succeeded in producing ideal industrial TCOs, the results obtained so far show great hope for it in the future. For instance, Nehmann [26] et al show the sol-gel-derived ITO with 2.8 Â 10 À3 Ω cm resistivity and 90% transparency.…”

Section: Introductionmentioning

confidence: 99%

Effects of Thallium–Aluminum‐Codoped Zinc Oxide Thin Film as a New Transparent Conducting Oxide

Zamani-Meymian

Mousavi

Rabbani

et al. 2021

Physica Status Solidi (a)

View full text Add to dashboard Cite

Herein, the electro–optical properties of sol–gel spin‐coated “thallium–aluminum‐codoped zinc oxide (TAZO)” focusing on the effects of thallium are investigated. It is shown that the amount of thallium (Tl) has a significant effect on improving the electrical properties of TAZO as a new transparent conducting oxide (TCO). The optimum results are achieved by adding 1 at% of Tl to aluminum‐doped zinc oxide (AZO), after which the sheet resistance (Rs) value is reduced from 30.21 to 2.832 KΩ sq−1. Although less Rs is recorded in all amounts of Tl used (from 1 to 4 at%) than in Tl‐free samples, Rs also increases as the amount of Tl increases, which is related to the degradation of the crystal structure at higher values of Tl. In view of a trade‐off between electrical conductivity and optical transparency, a decrease in transparency in the presence of Tl is a predictable issue, but while the Tl‐free samples record 90% transparency, the uniform thin film of 1 at% Tl‐AZO is able to achieve 85% transparency. This small amount of reduction in transparency shows the high potential of Tl to improve the properties of AZO as a TCO.

show abstract

Structural, optical and thermoelectric properties of Al-doped ZnO thin films prepared by spray pyrolysis

Cited by 54 publications

References 47 publications

Air Annealing Effect on Oxygen Vacancy Defects in Al-doped ZnO Films Grown by High-Speed Atmospheric Atomic Layer Deposition

Air Annealing Effect on Oxygen Vacancy Defects in Al-doped ZnO Films Grown by High-Speed Atmospheric Atomic Layer Deposition

Analysis of the optical properties of ZnO thin films deposited on a glass substrate by the So-gel method

Effects of Thallium–Aluminum‐Codoped Zinc Oxide Thin Film as a New Transparent Conducting Oxide

Contact Info

Product

Resources

About