Structural, Optical and Sensing Properties of Pure and Cu-Doped SnO&lt;SUB&gt;2&lt;/SUB&gt; Nanowires

Johari, Anima; Johari, Anoopshi; Bhatnagar, M.C.; Sharma, Manish

doi:10.1166/jnn.2014.9142

Cited by 9 publications

(6 citation statements)

References 7 publications

(7 reference statements)

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“…Many researchers were attracted by the importance of semiconductor gas sensors in the past decades. Considerable effort has been invested in the new generations of sensors, including semiconductor bulks [ 6 ], thick films [ 7 , 8 , 9 , 10 , 11 , 12 , 13 , 14 ], thin films [ 15 , 16 , 17 , 18 , 19 , 20 , 21 , 22 , 23 , 24 , 25 , 26 ] and nanostructured composites [ 27 , 28 , 29 , 30 , 31 , 32 , 33 , 34 , 35 ], which were made of different materials. These sensors hold the advantages of compatibility with microelectronic technology, low cost, being free of toxicity and good stability.…”

Section: Introductionmentioning

confidence: 99%

Inhomogeneous Oxygen Vacancy Distribution in Semiconductor Gas Sensors: Formation, Migration and Determination on Gas Sensing Characteristics

Liu

Gao

et al. 2017

Sensors

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The density of oxygen vacancies in semiconductor gas sensors was often assumed to be identical throughout the grain in the numerical discussion of the gas-sensing mechanism of the devices. In contrast, the actual devices had grains with inhomogeneous distribution of oxygen vacancy under non-ideal conditions. This conflict between reality and discussion drove us to study the formation and migration of the oxygen defects in semiconductor grains. A model of the gradient-distributed oxygen vacancy was proposed based on the effects of cooling rate and re-annealing on semiconductive thin films. The model established the diffusion equations of oxygen vacancy according to the defect kinetics of diffusion and exclusion. We described that the steady-state and transient-state oxygen vacancy distributions, which were used to calculate the gas-sensing characteristics of the sensor resistance and response to reducing gases under two different conditions. The gradient-distributed oxygen vacancy model had the applications in simulating the sensor performances, such as the power law, the grain size effect and the effect of depletion layer width.

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Section: Introductionmentioning

confidence: 99%

Inhomogeneous Oxygen Vacancy Distribution in Semiconductor Gas Sensors: Formation, Migration and Determination on Gas Sensing Characteristics

Liu

Gao

et al. 2017

Sensors

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“…This topic was so attractive to the researchers that plenty of investigations were carried out, promoting the development of new gas sensors in the last several decades. The technologies of thick film, thin film, and nanotechnique were introduced to fabricate semiconductor gas sensors, which were in various structures, made of different materials and involving various sensing mechanisms [3][4][5][6][7][8].…”

Section: Introductionmentioning

confidence: 99%

Effect of depletion layer width on electrical properties of semiconductive thin film gas sensor: a numerical study based on the gradient-distributed oxygen vacancy model

Liu

Cui

et al. 2016

Appl. Phys. A

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The effects of depletion layer width on the semiconductor gas sensors were investigated based on the gradient-distributed oxygen vacancy model, which provided numerical descriptions for the sensor properties. The potential barrier height, sensor resistance, and response to target gases were simulated to reveal their dependences on the depletion layer width. According to the simulation, it was possible to improve the sensor response by enlarging the width of depletion layer without changing the resistance of the gas sensor under the special circumstance. The different performances between resistance and response could provide a bright expectation that the design and fabrication of gas sensing devices could be economized. The simulation results were validated by the experimental performances of SnO 2 thin film gas sensors, which were prepared by the sol-gel technique. The dependences of sensor properties on depletion layer width were observed to be in agreement with the simulations.

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“…Cu-doped SnO 2 was recently studied for an ethanol gas sensor. The sensing behavior offered a suitable application of Cu-doped SnO 2 nanowires with 2.5 at.% Cu in the nanowires [20]. Other promising single-phase materials, such as CuO, Co 3 O 4 , and In 2 O 3 , have also been shown to exhibit a sensing performance toward CH 4 , although they are still in need of improvement [21,22,23].…”

Section: Introductionmentioning

confidence: 99%

Preparation and Characterization of Developed CuxSn1−xO2 Nanocomposite and Its Promising Methane Gas Sensing Properties

Shaalan

Hamad

Aljaafari

et al. 2019

Sensors

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Novel materials with nanostructures are effective in controlling the physical properties needed for specific applications. The use of active and sensing materials is increasing in many applications, such as gas sensing. In the present work, we attempted to synthesize incorporated Cu2+ into the SnO2 matrix as CuxSn1−xO2 nanocomposite using a cost-effective precursor and method. It was observed that, at low concentrations of copper precursor, only SnO2 phase could be detected by X-ray diffraction (XRD). The distribution of Cu in the SnO2 matrix was further measured by elemental analysis of energy-dispersive X-ray (EDX) mapping and X-ray fluorescence (XRF). At high copper concentration, a separated monoclinic phase of CuO was formed (noted here as CuO/SnO2). The average crystallite size was slightly reduced from 5.9 nm to 4.7 nm with low doping of 0.00–5.00% Cu but increased up to 15.0 nm at high doping of 10.00% Cu upon the formation of separated SnO2 and CuO phases. The formation of Cu–SnO2 or CuO phases at low and high concentrations was also observed by photoluminescent spectra. Here, only the emission peak of SnO2 with a slight blueshift was recorded at low concentrations, while only the CuO emission peak was recorded at high concentration. The effect of Cu concentration on the sensing properties of SnO2 toward methane (CH4) gas was also investigated. It was found that the sensor embedded with 2.00% Cu exhibited an excellent sensitivity of 69.0 at 350 °C and a short response–recovery time compared with the other sensors reported here. The sensing mechanism of CuxSn1−xO2 and CuO/SnO2 is thus proposed based on Cu incorporation.

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Structural, Optical and Sensing Properties of Pure and Cu-Doped SnO<SUB>2</SUB> Nanowires

Cited by 9 publications

References 7 publications

Inhomogeneous Oxygen Vacancy Distribution in Semiconductor Gas Sensors: Formation, Migration and Determination on Gas Sensing Characteristics

Inhomogeneous Oxygen Vacancy Distribution in Semiconductor Gas Sensors: Formation, Migration and Determination on Gas Sensing Characteristics

Effect of depletion layer width on electrical properties of semiconductive thin film gas sensor: a numerical study based on the gradient-distributed oxygen vacancy model

Preparation and Characterization of Developed CuxSn1−xO2 Nanocomposite and Its Promising Methane Gas Sensing Properties

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