2015
DOI: 10.1016/j.solidstatesciences.2015.04.003
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Structural, optical and photocatalytic properties of Ce-doped SnS2 nanoflakes

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Cited by 66 publications
(15 citation statements)
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“…Different types of nanomaterials have been obtained including nanosheets and nanoplates , nanoflowers , nanoflakes , three‐dimensional hierarchical microspheres , nanowalls , nanotubes and graphene anchored SnS 2 . There are many other uses of SnS 2 especially in photocatalysis , as photoconductors , photoluminescence devices , photodetectors or field‐effect transistors , gas sensors and solar cells .…”
Section: Introductionmentioning
confidence: 99%
“…Different types of nanomaterials have been obtained including nanosheets and nanoplates , nanoflowers , nanoflakes , three‐dimensional hierarchical microspheres , nanowalls , nanotubes and graphene anchored SnS 2 . There are many other uses of SnS 2 especially in photocatalysis , as photoconductors , photoluminescence devices , photodetectors or field‐effect transistors , gas sensors and solar cells .…”
Section: Introductionmentioning
confidence: 99%
“…For instance, Ce doped SnS 2 material demonstrates obviously enhanced Li storage performance due to the fact that Ce doping can stabilize the crystal lattice during charge/discharge and improved photocatalytic effect for the modied electronic structure of SnS 2 . 43,44 Doping SnS 2 with copper can increase the carrier density and the optical absorption and makes the photocatalytic process more efficient. 45 However, to our knowledge, the investigation of SnS 2 nanostructures as a supercapacitor electrode is seldom and the electrochemical properties of SnS 2 for pseudocapacitors still need to be further investigated.…”
Section: Introductionmentioning
confidence: 99%
“…For excitation at 550 nm, an intense peak was observed at about 825 nm, corresponding to energy ∼ 1.50 eV which may be due to near band edge emission and is a little higher than the band gap estimated from UV-Vis data. The PL spectra did not exhibit any deep level emission peaks which confirm that the prepared SnS thin films did not have any defects [41]. The origin of a sharp emission peak around 825 nm is due to the emission from vacancies and that of defects which are essential for growth, i.e., interstitial and stacking faults.…”
Section: 3a Uv-vis-nir Spectroscopymentioning
confidence: 68%