Structural, Optical, and Luminescent Properties of ZnO:Ga and ZnO:In Ceramics

Chernenko, Kirill; Gorokhova, E. I.; Eron’ko, S. B.; Sandulenko, A. V.; Venevtsev, Ivan; Wieczorek, H.; Родный, П. А.

doi:10.1109/tns.2018.2810331

Cited by 22 publications

(24 citation statements)

References 36 publications

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“…Moreover, recently (Chernenko et al, 2018) it was found that doping with Ga or In suppresses the defect luminescence in optical ceramics made of ZnO. A similar effect was observed in ZnO:In nanowires at low doping level.…”

Section: Introductionmentioning

confidence: 57%

Sub-nanosecond excitonic luminescence in ZnO:In nanocrystals

Grigorjeva

Grūbe

Bite

et al. 2019

Radiation Measurements

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The effects of indium concentration influence on the morphology, luminescence spectra and luminescence decay kinetics of ZnO:In nanocrystals prepared by the solar physical vapour deposition method are investigated. While undoped ZnO nanocrystals exhibit tetrapod-like morphology, with increasing indium concentration the tetra-pods are transformed into particles whose average size decreases with increasing indium concentration. The results of time-resolved luminescence studies of undoped and indium doped ZnO nanocrystals showed that by increasing indium concentration the decay time falls and luminescence intensity decreases.

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Section: Introductionmentioning

confidence: 57%

Sub-nanosecond excitonic luminescence in ZnO:In nanocrystals

Grigorjeva

Grūbe

Bite

et al. 2019

Radiation Measurements

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“…Commercial zinc oxide powder (Sigma-Aldrich, USA) was used to obtain ceramics. The indium and gallium were introduced in the form of In 2 O 3 and Ga 2 O 3 by mechanical mixing with the original ZnO powder during 40 min at 293 K [8], [9]. The level of dopants was chosen based on previously studies [9] and corresponded to practically the same scintillation properties of In-and Ga-doped ZnO ceramics.…”

Section: Methodsmentioning

confidence: 99%

“…The indium and gallium were introduced in the form of In 2 O 3 and Ga 2 O 3 by mechanical mixing with the original ZnO powder during 40 min at 293 K [8], [9]. The level of dopants was chosen based on previously studies [9] and corresponded to practically the same scintillation properties of In-and Ga-doped ZnO ceramics. The undoped ZnO, Ga-, and In-doped ZnO ceramics were fabricated by hot uniaxial pressing under vacuum conditions at 1150 °C, 200 MPa for 60 min [4], [9].…”

Section: Methodsmentioning

confidence: 99%

“…However, the location of dopants in the microstructure is not yet clear. Moreover, despite many studies on the structural and optical properties of the doped ZnO:Ga and ZnO: In ceramics [8], [9], their mechanical characteristics remain practically unexplored even though the modern technology imposes rather strict requirements towards the mechanical properties of brittle optical components as they are subject to vibrations, small mechanical and thermal shock loads. The lack of comparative data on mechanical properties makes it difficult to use these ceramics.…”

Section: Introductionmentioning

confidence: 99%

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Comparative Study on Micromechanical Properties of ZnO:Ga and ZnO:In Luminiscent Ceramics

Muktepavela

Zolotarjovs

Zabels

et al. 2021

Latvian Journal of Physics and Technical Sciences

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Indium (0.038 at.%) and gallium (0.042 at.%) doped ZnO ceramics were prepared by hot pressing. Ceramics were investigated to determine their structural and mechanical characteristics for the prospective use in scintillators. Based on results of nanoindentation, atom force and scanning electron microscopy as well as energy dispersive X-ray spectra measurements, locations of gallium within grain, indium at grain boundaries (GBs) and their different effect on the mechanical properties of ZnO ceramics were detected. Doping of gallium led to the increased modulus of elasticity in grain, decreased hardness near GBs, stabilization of micropores and brittle intercrystalline fracture mode. ZnO:In ceramic has modulus of elasticity and hardness values close to ZnO characteristics, the increased fracture toughness and some plasticity near GBs. Differences in the micromechanical properties of the ceramics correlate with the location of dopants. Results demonstrate that the ZnO:In ceramic has a greater stress relaxation potential than the ZnO:Ga.

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“…The introduction of trivalent impurities not only reduces the intensity of the defect luminescence but also shortens its damping time. Studies have been carried out of how Ga affects the characteristics of ZnO powders [3], films [2,4], single crystals [5], and ceramics [6,7,8]. Ceramic ZnO:Ga is of special interest for its use in scintillation detectors, since it possesses a short damping time of the exciton luminescence (less than one nanosecond) and high radiation stability and is a comparatively inexpensive material.…”

mentioning

confidence: 99%

Structural, optical, and luminescence properties of ZnO:Ga optical scintillation ceramic

Gorokhova¹,

Eron’ko²,

Oreshchenko³

et al. 2018

J. Opt. Technol.

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This paper discusses the characteristics of ZnO and ZnO:Ga ceramics fabricated by uniaxial hot pressing. The short-wavelength transmission limit of zinc oxide ceramics is in the 370-nm region; the long-wavelength limit is determined by the free-charge-carrier concentration and lies in the interval from 5 to 9 μm. The total transmittance of such ceramics in the visible and near-IR regions is about 70% when the sample is 0.5 mm thick. The luminescence spectrum is represented by a broad emission band with maximum at 580 nm, having a defect nature. The introduction of 0.03-0.1 mass % gallium into the zinc oxide structure inhibits grain growth and increases the free-charge-carrier concentration to 3.44 × 10 19 cm −3. As the gallium concentration increases in the range 0.05-0.1 mass % in a ceramic of composition ZnO:Ga, the defect luminescence band is suppressed and a characteristic exciton luminescence is formed with a maximum corresponding to 389 nm and a damping time constant of 1.1 ns.

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Structural, Optical, and Luminescent Properties of ZnO:Ga and ZnO:In Ceramics

Cited by 22 publications

References 36 publications

Sub-nanosecond excitonic luminescence in ZnO:In nanocrystals

Sub-nanosecond excitonic luminescence in ZnO:In nanocrystals

Comparative Study on Micromechanical Properties of ZnO:Ga and ZnO:In Luminiscent Ceramics

Structural, optical, and luminescence properties of ZnO:Ga optical scintillation ceramic

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