2023
DOI: 10.1007/s10854-022-09524-8
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Structural, optical, and electrochemical characteristics of undoped and In3+-doped tin antimony sulfide thin films for device applications

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Cited by 5 publications
(2 citation statements)
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“…Primarily, the energy band variation is performed within the experimentally observed Cu 2 Te bandgaps ranging from 0.5 to 1.8 eV [48,49], which are close to the bandgaps of Sn 6 Sb 10 S 21 thin films (Eg~1.67-1.68 eV) [50] and lower than those of Ce x Cd 1−x S (Eg~2.24-2.40 eV) [51] and Sb-doped Sn 3 O 4 (Eg~2.15-2.84 eV) [52]. Thus, the optimum bang gap of Cu 2 Te can be established for the effective performance of the rare Te:Cu buffer in CdTe.…”
Section: Effect Of Te:cu Band Offset On the Performance Of Cdte Thin ...mentioning
confidence: 94%
“…Primarily, the energy band variation is performed within the experimentally observed Cu 2 Te bandgaps ranging from 0.5 to 1.8 eV [48,49], which are close to the bandgaps of Sn 6 Sb 10 S 21 thin films (Eg~1.67-1.68 eV) [50] and lower than those of Ce x Cd 1−x S (Eg~2.24-2.40 eV) [51] and Sb-doped Sn 3 O 4 (Eg~2.15-2.84 eV) [52]. Thus, the optimum bang gap of Cu 2 Te can be established for the effective performance of the rare Te:Cu buffer in CdTe.…”
Section: Effect Of Te:cu Band Offset On the Performance Of Cdte Thin ...mentioning
confidence: 94%
“…Transition metal sulfides, denoted as M x S y where M represents transition metals such as Fe, Co, and Ni, have been the subject of extensive research due to their remarkable ability to anchor polysulfides [12]. Besides, the nearly metallic nature of transition metal sulfides offers fast electron transfer over conventional metal oxides such as thus permitting kinetically facilitated electrocatalytic transition of polysulfides species [13].…”
Section: Introductionmentioning
confidence: 99%