Structural, optical and electrical properties of ZnO/Zn2GeO4 porous-like thin film and wires

Synthesis, characterization and electrical properties of hybrid Zn2GeO4–ZnO beaded nanowire arrays

“…The UV emission with a peak at $380 nm is due to the near band edge emission of ZnO [34]. The samples with longer treatment durations does not display any detectable shift to the near band edge emission peak at 380 nm, which confirms that Ge doping in the core ZnO grains is absent in our samples [35,36].…”

Thermoelectric Properties of Oxide Semiconductors

“…We have observed that (0 0 6) plane has the strongest intensity which is oxygen sensitive; therefore, enhancement of intensity of this plane with annealing temperature is understandable. which are indexed as (2 2 0), (6 0 0), (0 0 6), (6 3 0), and 7 1 3, respectively [14]. The peak which appears at 28.6° and 38.4° is belonging to (1 1 1) plane of Si and Au [15,16], respectively, along with peak of ZnO at 34.6° having (0 0 2) plane [17].…”

Luminescence of one dimensional ZnO, GeO2–Zn2GeO4 nanostructure through thermal evaporation of Zn and Ge powder mixture

“…Similarly, germanium based compound is a suitable materials for co-thermal evaporation with ZnO due to their potential application in high-speed microelectronics and photonics, on account of their small dimensions and high carrier mobility [20,21]. In addition to being an indirect band gap semiconductor with small energy difference (∼0.14 eV) between its direct and indirect band gaps, it has a small ionic radius difference between Ge ion (0.53Å) and Zn ion (0.74Å) to enhance the probability of Ge ion to replace the Zn ion vacancy [22] Previous studies reported that NBE emission band of ZnO was obtained by doping Ge in ZnO via sputtering [23]. Although light emission for ZnO nanowires have been well reported, but there are only a few reports on the way to control the emission center of ZnO nanowires, especially NBE emission for optoelectronic application [24,25] nanowires obtained by simple thermal evaporation of Zn:Ge powder mixture for modern optoelectronic applications.…”