Structural, optical and electrical properties of n-ZnO/p-Si heterojunction prepared by ultrasonic spray

Effect of optical gap energy on the Urbach energy in the undoped ZnO thin films

“…The films were deposited at a substrate temperature of 350 • C. The optical properties of undoped ZnO thin film such a band gap energy and the Urbach energy were obtained from our previous paper [21], and various papers [22][23][24][25][26][27][28][29][30]; they have studied the effect of substrate temperature and precursor molarity on the structural and the optical properties of undoped ZnO thin films, these results are shown in Table 1 In this study, we will show the evolution of the precursor molarity on the Urbach energy and band gap energy, we tried to establish correlations for each model proposed. In our calculations, the Urbach energy can be calculated from precursor molarity and band gap energy of undoped ZnO thin films; the ZnO exhibit a single crystals exhibit n-type semiconductor with a high crystallinity.…”

The calculation of the optical gap energy of ZnXO (X = Bi, Sn and Fe)

“…In this study, the undoped and doped ZnO samples were deposited on glass substrates using the ultrasonic spray and spray pyrolysis techniques. In general, the depositions were performed at a substrate temperature of 350 ∘ C. The optical band gap energy and the Urbach energy of undoped and Bi, Sn and Fe doped ZnO thin films were taken from the literature [28][29][30][31][32][33][34][35][36][37][38][39][40][41][42][43][44], which studied the effect of precursor molarity, doping level and substrate temperature on structural, electrical and optical properties of undoped and doped ZnO thin films with Bi, Sn and Fe. Table 1 shows the typical procedures of experimental research designs, which used zinc as a precursor.…”

Electrical characterization of DC sputtered ZnO/p-Si heterojunction

“…It has been shown that the structure has forward-to-reverse current ratio of 519 at 3.0 V and ideality factor of 4.5. Furthermore, Zebbar et al [20] have prepared n-ZnO/p-Si have been heterojunction structures by ultrasonic spraying of undoped ZnO thin films onto p-type Si (1 0 0) substrates. They have reported the rectification ratio, ideality factor, barrier height and series resistance of the heterojunction as 36 at 3 V, 4, 0.67 eV and 4.8 k , respectively.…”

“…Recently, quite a lot of research groups have devoted to fabrication of ZnO based junctions due to potential applications in optoelectronic devices [9,13,[17][18][19][20]. For instance, a heterojunction composed of n-type Al-doped ZnO and p-type Si has been fabricated by the laser molecular beam epitaxy (LMBE) technique and its photovoltaic properties have been studied at room temperature by Wang et al [17].…”