Structural, optical, and electrical properties of Cu2SnS3 thin films produced by sol gel method

Orletskii, I. G.; Solovan, M. N.; Pinna, F.; Cicero, Giancarlo; Maryanchuk, P. D.; Майструк, Э. В.; Tresso, Elena Maria

doi:10.1134/s1063783417040163

Cited by 18 publications

(5 citation statements)

References 24 publications

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“…and E C for all samples are collected in table 3. The obtained values of κ 0 =10.7 is close to the reported value of κ 0 =9.6 in literature [33,39]. The deviation from these values may be related to an indirect way to determine the value of κ 0 and the rectangular approximation of DOS.…”

Section: Investigation Of Electrical Conduction Mechanisms Of Cts Samsupporting

confidence: 86%

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Structural properties and variable-range hopping conductivity of Cu₂SnS₃

Nguyen

Захвалинский

Pham³

et al. 2019

Mater. Res. Express

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Section: Investigation Of Electrical Conduction Mechanisms Of Cts Samsupporting

confidence: 86%

“…where E 0 is the energy of the DOS peak in the impurity band, κ 0 is the dielectric permittivity far from the MIT, and » m m 0.2 0 is the effective mass of the charge carries [32,33]. Therefore, the ratio of a/a B can be also calculated as m = - is the overlap integral [22].…”

Section: Investigation Of Electrical Conduction Mechanisms Of Cts Sammentioning

confidence: 99%

Structural properties and variable-range hopping conductivity of Cu₂SnS₃

Nguyen

Захвалинский

Pham³

et al. 2019

Mater. Res. Express

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show abstract

“…The hole effective mass of Cu 2 SnS 3 is much larger (2.4∼3.0m 0 ) than the electron effective mass of 0.2m 0 , suggesting that hole transport could be a bottleneck in Cu 2 SnS 3 . 154,155 The effective masses in AgBiS 2 are found to be m e = 0.35m 0 and m h = 0.722m 0 , but no anisotropy has been observed. 110 Considering its ground-state structure shown in Figure 11e, future study on the anisotropic effective mass may be necessary, to further improve the device performance.…”

Section: Band Structure and Band Alignmentmentioning

confidence: 99%

Emerging Chalcogenide Thin Films for Solar Energy Harvesting Devices

et al. 2021

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Chalcogenide semiconductors offer excellent optoelectronic properties for their use in solar cells, exemplified by the commercialization of Cu(In,Ga)Se 2 -and CdTe-based photovoltaic technologies. Recently, several other chalcogenides have emerged as promising photoabsorbers for energy harvesting through the conversion of solar energy to electricity and fuels. The goal of this review is to summarize the development of emerging binary

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“…Therefore, the intensity of the peak increases as the particle size increases when the heating temperature rises. In common cases, the electrical conductivity often improves with crystallinity [31]. Mn-S stretching vibrations and a single peak at 624.2 cm − 1 correspond to S-S disul de group [32].…”

Section: Electrochemical Studiesmentioning

confidence: 99%

Optimization of heating temperature on the growth of manganese sulfide nanosheets binder-free electrode for supercapattery

Rosli,

Omar,

Awang

et al. 2023

Ionics

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Supercapattery has emerged as one of the possibilities in the electrochemical energy storage system as a consequence of the expansion of technological advancement and the electrical vehicle sector. Manganese sulphide (MnS) nano akes were produced by hydrothermal technique at various heating temperatures (100,110,120, and 130 o C). The existence of MnS is revealed by the X-ray diffraction (XRD) diffractogram, and α-and γ-MnS crystals were effectively grown on a nickel (Ni) foam. MnS nano akes were seen under eld-emission scanning electron microscope (FESEM). The crystalline structure of MnS nano akes is susceptible to the variation depending on the heating temperature, and at 120 o C MnS produced nano ake with additional wrinkles. Through Brunauer-Emmett-Teller(BET) analysis, the thermal and physical adsorption investigations demonstrated the high total surface area and thermal stability of MnS electrodes. The ndings of BET studies demonstrate that MnS-120 has the highest surface BET (SBET) and the smallest pore size distribution (PSD),which later increases the total surface area of MnS nano akes for an effective energy storage mechanism. MnS is structurally stable below 200 o C, according to thermogravimetric analysis (TGA). MnS-120 electrode has a maximum speci c capacity of 1003.5 C/g at 5 A/g and a 49% rate capability. Supercapattery devices were created in a MnS-120//activated carbon (AC) con guration to assess the real-time performance of the material. The MnS-120//AC demonstrated better e ciency by offering speci c energy of 69.24 Wh/kg at 2953 W/kg. The life cycle test con rmed that MnS-120//AC is stable with a capacity retention of value of 96% after 4000 cycles.

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Structural, optical, and electrical properties of Cu2SnS3 thin films produced by sol gel method

Cited by 18 publications

References 24 publications

Structural properties and variable-range hopping conductivity of Cu₂SnS₃

Structural properties and variable-range hopping conductivity of Cu₂SnS₃

Emerging Chalcogenide Thin Films for Solar Energy Harvesting Devices

Optimization of heating temperature on the growth of manganese sulfide nanosheets binder-free electrode for supercapattery

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Structural, optical, and electrical properties of Cu2SnS3 thin films produced by sol gel method

Cited by 18 publications

References 24 publications

Structural properties and variable-range hopping conductivity of Cu2SnS3

Structural properties and variable-range hopping conductivity of Cu2SnS3

Emerging Chalcogenide Thin Films for Solar Energy Harvesting Devices

Optimization of heating temperature on the growth of manganese sulfide nanosheets binder-free electrode for supercapattery

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Product

Resources

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Structural properties and variable-range hopping conductivity of Cu₂SnS₃

Structural properties and variable-range hopping conductivity of Cu₂SnS₃