2023
DOI: 10.1016/j.matchemphys.2022.126950
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Structural, optical, and electrical properties of e-beam deposited metamaterials of granular CdSe thin films on glass substrates with a thin buffer layer of HfO2 dielectric

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Cited by 12 publications
(6 citation statements)
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“…Over the last two decades, with the development of integrated circuit, HfO 2 is employed as the high-k dielectric layer in the electronic devices [3][4][5]. In addition, HfO 2 -based thin film with ferroelectric performance is discovered, further suggesting its potential in ferroelectric random-access memory (FeRAM) [6][7][8][9][10][11][12][13]. Generally, HfO 2 has three different crystal structures including monoclinic, tetragonal, and orthorhombic phases, in which the monoclinic and tetragonal phases are centrosymmetric structures, while the orthorhombic phase is non-centrosymmetric structure [14,15].…”
Section: Introductionmentioning
confidence: 99%
“…Over the last two decades, with the development of integrated circuit, HfO 2 is employed as the high-k dielectric layer in the electronic devices [3][4][5]. In addition, HfO 2 -based thin film with ferroelectric performance is discovered, further suggesting its potential in ferroelectric random-access memory (FeRAM) [6][7][8][9][10][11][12][13]. Generally, HfO 2 has three different crystal structures including monoclinic, tetragonal, and orthorhombic phases, in which the monoclinic and tetragonal phases are centrosymmetric structures, while the orthorhombic phase is non-centrosymmetric structure [14,15].…”
Section: Introductionmentioning
confidence: 99%
“…Among the potential candidates, HfO 2 becomes a leading material due to its superior high-k gate dielectric characteristics. It persists a relatively large band gap (>5 eV) [3], a high dielectric constant (∼25) [4], the good thermal and thermodynamic stability in contact with silicon [5]. Consequently, HfO 2 has been the focus of extensive research, especially for its application in high-k gate dielectrics as FETs [6,7].…”
Section: Introductionmentioning
confidence: 99%
“…where χ (2) interface and χ (3) are the second-order and third-order nonlinear susceptibility tensors, respectively. E 0 is the initial static built-in electric field while I ω is the intensity of the incident laser.…”
Section: Introductionmentioning
confidence: 99%
“…1−6 Before Veselago proposed the theoretical possibility of negative refraction, almost all previous investigations concentrated on the positive permittivity while giving the negative permittivity less attention. 7 Epsilon-negative materials have been shown to have a wide range of potential applications, including coil-free resonators, 8 novel capacitors with high permittivity, 9 negative capacitance field effect transistors, 10 and high-power microwave filters. 11 It has been shown that plasma, an established method of collectively exciting metal electrons in the visible or nearultraviolet region, can produce negative permittivity and the magnitude of negative permittivity is closely associated with their free carrier concentration.…”
Section: Introductionmentioning
confidence: 99%
“…These dielectric properties, determined by the permittivity, vary depending on the desired application and the material’s ability to respond to electric fields. Before Veselago proposed the theoretical possibility of negative refraction, almost all previous investigations concentrated on the positive permittivity while giving the negative permittivity less attention . Epsilon-negative materials have been shown to have a wide range of potential applications, including coil-free resonators, novel capacitors with high permittivity, negative capacitance field effect transistors, and high-power microwave filters …”
Section: Introductionmentioning
confidence: 99%