Structural, optical and electrical properties of In2Se3 thin films formed by annealing chemically deposited Se and vacuum evaporated In stack layers

Bindu, K; Kartha, C. Sudha; Vijayakumar, K. P.; Abe, T.; Kashiwaba, Y.

doi:10.1016/s0169-4332(02)00172-1

Cited by 37 publications

(19 citation statements)

References 14 publications

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“…It has been found that the optical energy gap values are 1.56 and 1.92 eV for amorphous and polycrystalline InSe thin films, respectively. This result is in agreement with the observation of Bindu et al [20] for the InSe films deposited at elevated temperatures and with other earlier reported data [21,22]. According to Mott and Davis model [23], the width of the localized states near the mobility edges depends on the degrees of disorder and the defects present in the amorphous structure.…”

Section: Optical Characterizationsupporting

confidence: 93%

Effect of substrate temperature on the properties of vacuum evaporated indium selenide thin films

Viswanathan

Senthilkumar

Sriranjini

et al. 2005

Cryst. Res. Technol.

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Thin films of InSe were obtained by thermal evaporation techniques on glass substrates maintained at various temperatures (T sb = 30°, 400°C). X-ray diffraction analysis showed the occurrence of amorphous to polycrystalline transformation in the films deposited at higher substrate temperature (400°C). The polycrystalline films were found to have a hexagonal lattice. Compositions of these films have been characterized by EDAX and the surface analysis by scanning electron microscopy. Optical properties of the films, investigated by using spectrophotometer transmittance spectra in the wavelength range (300 -1100 nm), were explained in terms of substrate temperatures. Films formed at room temperature showed an optical band gap (E g opt ) 1.56 eV; where as the films formed at 400°C were found to have a E g opt of 1.92 eV. The increase in the value of E g opt with T sb treatment is interpreted in terms of the density of states model as proposed by Mott and Davis. The analysis of current -Voltage characteristics, based on space charge limited currents (SCLC) measurements, confirms the exponential decrease of density of states from the conduction band edge towards the Fermi level for both the amorphous and polycrystalline films.

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Section: Optical Characterizationsupporting

confidence: 93%

Effect of substrate temperature on the properties of vacuum evaporated indium selenide thin films

Viswanathan

Senthilkumar

Sriranjini

et al. 2005

Cryst. Res. Technol.

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“…The values of the activation energy indicate that the prepared samples are semiconductors. Similar results were obtained by Bindu et al [47] for chemically deposited In 2 Se 3 thin films. The type of conductivity exhibited by the spray deposited In 2 Se 3 thin films is determined from TEP measurement.…”

Section: Electrical and Thermo Electrical Studiessupporting

confidence: 90%

Properties of spray deposited nanocrystalline indium selenide thin films

Yadav¹,

Salunke²

2015

J Mater Sci: Mater Electron

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Metal chalcogenide and chalcopyrite thin films have attracted great deal of attention due to their exciting photoelectrical characteristics. Indium selenide thin films have been deposited by computerized chemical spray pyrolysis technique on amorphous glass substrates. The as deposited films are characterized for wide range of properties including structural, surface morphological, optical and electrical, Hall effect and thermo-electrical measurements. X-ray diffraction study revealed that indium selenide thin films are polycrystalline with hexagonal crystal structure irrespective of substrate temperature. Surface morphology and film composition have been analyzed using atomic force microscopy and energy dispersive analysis by X-rays. Nearly stoichiometric deposition of the film at 350°C was confirmed from EDAX analysis. Optical absorption measurements show that the deposited films possess a direct band gap value of 1.78 eV. The Hall effect study reveals that the films exhibit n-type conductivity.

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“…This compound semiconductors are most important materials and has been use to fabricate scientific important devices such as optical mass memories, nonlinear optics¸ solar cells, photoconductors, gamma ray detectors, thermal imaging and optical fiber [5][6][7][8][9][10][11]. The development and synthesis of ternary chalcogenide semiconductor and to study its structural, electrical and optical properties is currently a topic of very active research [12,13].…”

Section: Introductionmentioning

confidence: 99%