Structural, optical and electrical properties of sputtered NiO thin films for gas detection

Predanocy, M.; Hotovy, I.; Čaplovičová, Mária

doi:10.1016/j.apsusc.2016.05.028

Cited by 34 publications

(15 citation statements)

References 38 publications

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“…Therefore, it can be observed that both structural and chemical properties strongly impact the transport properties. The electrical properties of NiO thin films are strongly associated with the stoichiometry of the compound, presence of defects, and microstructure [36]. Besides, the variability of electrical properties can also rely on other processing parameters such as oxygen partial pressure and sputter pressure.…”

Section: Electrical Propertiesmentioning

confidence: 99%

Structural, spectroscopic and electrical properties of dc magnetron sputtered NiO thin films and an insight into different defect states

2021

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In this article, we report a detailed study on the influence of sputter power on physical properties of the NiO films grown by DC magnetron sputtering. Structural studies carried out by Grazing Incidence X-ray diffraction (XRD) reveals the polycrystalline nature of the films with FCC phase. The crystallographic orientation (111) plane followed by (200), (220), and (311) plane were evident from the XRD spectra. The average crystallites sizes were estimated from the spectra, and the values were compared using three different plots such as Scherrer, Williamson–Hall and size–strain plot. The surface morphology was carried out by atomic force microscopy. The deposited samples show semitransparent behavior in the visible region and the estimated band gap increased from 2.70 to 3.34 eV with an increase in sputter power. Furthermore, X-ray photoelectron spectroscopy (XPS) core-level Ni2p spectra were deconvoluted and the observed $${\text{Ni}}2{\text{p}}_{{{\text{3/2}}}}$$ Ni 2 p 3/2 , $${\text{Ni}}2{\text{p}}_{{1/2}}$$ Ni 2 p 1 / 2 domain along with their satellite’s peaks were analyzed. Most importantly, XPS quantification data and Raman spectra confirm the presence of both $${\rm{Ni}}^{2+}$$ Ni 2 + and $${\rm{Ni}}^{3+}$$ Ni 3 + states in the NiO films. The electrical properties carried at room temperature revealed that the resistivity of the film significantly increased and a mobility of ~ 84 $${\rm{cm}}^{2}{\rm{V}}^{-1}{s}^{-1}$$ cm 2 V - 1 s - 1 was obtained.

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Section: Electrical Propertiesmentioning

confidence: 99%

Structural, spectroscopic and electrical properties of dc magnetron sputtered NiO thin films and an insight into different defect states

2021

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“…The decreased mobility is owing colloidal energy loss of the particles with oxygen during sputtering process [42]. The tunable electrical properties of NiO thin films with oxygen flow rate could be associated with the point defects, microstructure and composition [43]. In addition, variation of electrical properties of the films not only rely on oxygen partial pressure, but other deposition parameters such as sputter power, target surface, sputter pressure also plays crucial role.…”

Section: Electrical Propertiesmentioning

confidence: 99%

Investigation on tailoring physical properties of Nickel Oxide thin films grown by dc magnetron sputtering

Salunkhe

Kekuda

2020

Mater. Res. Express

153

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We report a comprehensive study on influence of oxygen partial pressure on NiO thin films grown on glass substrates in a combined argon and oxygen ambience by reactive dc magnetron sputtering. In this present article, we have discussed the dependence of oxygen pressure on structural, chemical, morphological, optical and electrical properties of the sputtered NiO films. Glancing angle x-ray diffraction reveals that the deposited films were polycrystalline in nature with FCC phase. The preferred orientation changes from (200) to (111) in a higher O 2 flow rate environment and an average particle size was estimated using Scherrer relation. The surface morphology of films was studied by using atomic force microscopy. The x-ray photoelectron spectroscopy analysis demonstrates the core level Ni 2p spectra over a range of 850 eV to 885 eV of binding energy and observed Ni 2p 3/2 , Ni 2p 1/2 domains along with their satellite peaks. It infers the presence of both Ni +2 and Ni +3 oxidation states in the sputtered films. Additionally, Raman spectroscopy was carried out to confirm the structural defects level and crystalline nature of the films. The optical results show that deposited films were semi-transparent and the evaluated optical band gap of the material lies in the range 3.36 eV to 3.52 eV. The extracted electrical properties infer either n-type or p-type conductivity depending on the processing conditions of the films.

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“…This might result in a vacuum‐level shift and a decrease in overall work function. [10b] Furthermore, we observed a substantial increase in resistivity along with increasing thickness of the NiO coating (Figure b), which shows that thinner devices are desirable to minimise resistive losses in devices.…”

Section: Resultsmentioning

confidence: 78%

“…Of the known and established p‐type semiconductor oxides, nickel oxide (NiO), which is an intrinsic nonstoichiometric (O/Ni atomic ratio >1), wide‐bandgap (3.6–4 eV) p‐type semiconductor material, is possibly the most widely studied with a number of routes to thin films including both chemical and physical methods. Whereas the most popular methods of thin‐film deposition appear to be sol–gel, magnetron sputtering, evaporation and laser ablation deposition as well as electrospray deposition, a number of single‐source precursors for application in chemical‐vapour deposition (CVD) and atomic layer deposition (ALD) have also been developed (Scheme ).…”

Section: Introductionmentioning

confidence: 99%

“…For the cost‐effective engineering of large‐scale photovoltaic devices, deposition of NiO by means of laser‐assisted sputtering, [10f] or by other methods such as vacuum evaporation,[11d] sputtering[10b], [10c] or ALD, is less attractive than by CVD, which is capable of depositing films of good uniformity and composition and that is currently employed to coat large areas of float glass in an online process. However, precursors for the CVD of NiO remain rather limited.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Precursors for p‐Type Nickel Oxide: Atmospheric‐Pressure Metal–Organic Chemical‐Vapour Deposition (MOCVD) of Nickel Oxide Thin Films with High Work Functions

et al. 2017

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Structural, optical and electrical properties of sputtered NiO thin films for gas detection

Cited by 34 publications

References 38 publications

Structural, spectroscopic and electrical properties of dc magnetron sputtered NiO thin films and an insight into different defect states

Structural, spectroscopic and electrical properties of dc magnetron sputtered NiO thin films and an insight into different defect states

Investigation on tailoring physical properties of Nickel Oxide thin films grown by dc magnetron sputtering

Precursors for p‐Type Nickel Oxide: Atmospheric‐Pressure Metal–Organic Chemical‐Vapour Deposition (MOCVD) of Nickel Oxide Thin Films with High Work Functions

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