Structural, Optical, and Electrical Investigations of Nd2O3-Doped PVA/PVP Polymeric Composites for Electronic and Optoelectronic Applications

Abstract

In this present work, a PVA/PVP-blend polymer was doped with various concentrations of neodymium oxide (PB-Nd+3) composite films using the solution casting technique. X-ray diffraction (XRD) analysis was used to investigate the composite structure and proved the semi-crystallinity of the pure PVA/PVP polymeric sample. Furthermore, Fourier transform infrared (FT-IR) analysis, a chemical-structure tool, illustrated a significant interaction of PB-Nd+3 elements in the polymeric blends. The transmittance data reached 88% for the host PVA/PVP blend matrix, while the absorption increased with the high dopant quantities of PB-Nd+3. The absorption spectrum fitting (ASF) and Tauc’s models optically estimated the direct and indirect energy bandgaps, where the addition of PB-Nd+3 concentrations resulted in a drop in the energy bandgap values. A remarkably higher quantity of Urbach energy for the investigated composite films was observed with the increase in the PB-Nd+3 contents. Moreover, seven theoretical equations were utilized, in this current research, to indicate the correlation between the refractive index and the energy bandgap. The indirect bandgaps for the proposed composites were evaluated to be in the range of 5.6 eV to 4.82 eV; in addition, the direct energy gaps decreased from 6.09 eV to 5.83 eV as the dopant ratios increased. The nonlinear optical parameters were influenced by adding PB-Nd+3, which tended to increase the values. The PB-Nd+3 composite films enhanced the optical limiting effects and offered a cut-off laser in the visible region. The real and imaginary parts of the dielectric permittivity of the blend polymer embedded in PB-Nd+3 increased in the low-frequency region. The AC conductivity and nonlinear I-V characteristics were augmented with the doping level of PB-Nd+3 contents in the blended PVA/PVP polymer. The outstanding findings regarding the structural, electrical, optical, and dielectric performance of the proposed materials show that the new PB-Nd+3-doped PVA/PVP composite polymeric films are applicable in optoelectronics, cut-off lasers, and electrical devices.

Effect of Ag/CuS nanoparticles loading to enhance linear/nonlinear spectroscopic and electrical characteristics of PVP/PVA blends for flexible optoelectronics

“…Through FT-IR measurements, chemical constituents and bonds created and modified in a sample could be detected. 28 Figure 1 illustrates FT-IR spectra of blank PVP/PVA and different ACS PNCs in wavenumbers range from 400 to 4000 cm À1 . According to FT-IR spectrum of blank PVP/PVA (denoted by PVP/PVA 0 ), an extremely broad absorption band centered at 3324 cm À1 is ascribed to O H stretching vibrations.…”

“…The optical limiting and electronic performance of PVP/PVA was examined using ZnO by Zyoud research group. 28 Ali and Khairy tailored dielectric and optical properties of PVP/PVA by LiMn 2 O 4 nanoparticles (NPs). 18 The spectroscopic performance of nano-CdS/Fe doped PVP/PVA blend was investigated by Heiba group.…”

“…The present study shows valuable enrichment in optical and electrical characteristics of PVP/PVA loaded with ACS that nominates it for applications in electronic, antimicrobial, optical cut-off and optoelectronic fields. 37,38…”

Synergistic Influence of FRET on a High Quantum Yield π- Conjugate Polycarbazole-ZnS Composite Thin Film

“…Many technologies have found significant uses for it, including rechargeable batteries, sensors, organic transistors, light-emitting diodes, and electroluminescent devices. Polymer composites are currently receiving increased attention due to their attractive and enhanced properties. , …”

“…Polymer composites are currently receiving increased attention due to their attractive and enhanced properties. 7,8 Researchers have been drawn to thin film materials during the past decade due to their potential use in a variety of fields, particularly the field of optoelectronics. 9 Zinc sulfide (ZnS) has been explored extensively for a broad range of applications including LEDs, flat panel displays, IR windows, thin film solar cells, sensors, and lasers due to its superior characteristics among the II−VI group compound semiconductors.…”