2019
DOI: 10.1007/s10854-019-02489-1
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Structural, optical and electrical characterization of SnS nanomaterials grown at different temperatures

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Cited by 6 publications
(5 citation statements)
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“…Pristine α-Fe 2 O 3 , which was synthesized from the decomposition of Fe­(acac) 3 in DMF in the presence of PVP surfactant at 180 °C, presents distinct diffraction peaks at 2θ = 24.1°, 33.1° (main characteristic peak), 35.6°, 40.8°, and 49.4°, assigned to the crystal planes of (012), (104), (110), (113), and (024), respectively (Figure (a)) . For pristine SnS, formed from SnCl 2 and sulfur in the presence of PVP in DMF, the characteristic diffraction peaks were observed at 2θ = 21.9°, 25.9°, 27.6°, 31.9°, 39.2°, 42.6°, 45.5°, and 48.5° corresponding to the (011), (012), (102), (004), (113), (021), (015), and (023) diffraction planes, respectively (Figure (a)) …”
Section: Resultsmentioning
confidence: 99%
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“…Pristine α-Fe 2 O 3 , which was synthesized from the decomposition of Fe­(acac) 3 in DMF in the presence of PVP surfactant at 180 °C, presents distinct diffraction peaks at 2θ = 24.1°, 33.1° (main characteristic peak), 35.6°, 40.8°, and 49.4°, assigned to the crystal planes of (012), (104), (110), (113), and (024), respectively (Figure (a)) . For pristine SnS, formed from SnCl 2 and sulfur in the presence of PVP in DMF, the characteristic diffraction peaks were observed at 2θ = 21.9°, 25.9°, 27.6°, 31.9°, 39.2°, 42.6°, 45.5°, and 48.5° corresponding to the (011), (012), (102), (004), (113), (021), (015), and (023) diffraction planes, respectively (Figure (a)) …”
Section: Resultsmentioning
confidence: 99%
“… 29 For pristine SnS, formed from SnCl 2 and sulfur in the presence of PVP in DMF, the characteristic diffraction peaks were observed at 2θ = 21.9°, 25.9°, 27.6°, 31.9°, 39.2°, 42.6°, 45.5°, and 48.5° corresponding to the (011), (012), (102), (004), (113), (021), (015), and (023) diffraction planes, respectively ( Figure 1 (a)). 30 …”
Section: Resultsmentioning
confidence: 99%
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“…Complex dielectric function ε = ε 1 + iε 2 or refractive index Ñ = n + ik values provide useful insight into the electronic structure for better characterization of device performance [15]. There are many reports on the optical properties of SnS by absorption and reflection [16], photoluminescence [17], photoreflectance [18], ultraviolet-visible-near infrared spectroscopy [19], and spectroscopic ellipsometry (SE) [2,3,14]. In this work, we used the SE because it directly determines the dielectric function and refractive index of a material [20,21] without using the Kramers-Kronig relations.…”
Section: Introductionmentioning
confidence: 99%
“…The complex dielectric function ε = ε 1 + iε 2 and refractive index Ñ = n + ik are especially useful for gaining insight into the electronic bandgap structure needed to characterize device performance 15 18 . As a consequence, optical properties have been measured by reflection and absorption 19 , photoreflectance 20 , optical-absorption measurements 21 on single crystals, UV–Vis-near infrared spectroscopy 22 , photoluminescence 23 , 24 , and UV–Vis spectrometry 25 of poly- and nano-crystalline films. Among optical metrology techniques, spectroscopic ellipsometry (SE) is the most powerful for determining dielectric functions and refractive indices of materials 26 – 30 .…”
Section: Introductionmentioning
confidence: 99%