Structural, Optical and Dielectric Properties of Nd Doped NiO Thin Films Deposited with a Spray Pyrolysis Method

Ganesh, V.; Kumar, B. R. Vinay; Bitla, Yugandhar; Yahia, I.S.; AlFaify, S.

doi:10.1007/s10904-021-01889-3

Cited by 14 publications

(3 citation statements)

References 49 publications

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“…Especially, the second-order phonon vibrations 2TO phonon mode appeared at 863 cm −1 in NiO:Nd film. A similar observation was reported by Ganesh et al after incorporating Nd ions into NiO for films prepared by the NSP [19]. No additional peaks are present in the spectrum of all the prepared films, confirming the incorporation of RE ions in the host lattice.…”

Section: Raman Studiessupporting

confidence: 89%

“…It is due to larger ionic radii of Nd 3+ , La 3+ compared to host Ni 2+ ions. This shift in peak positions confirms the existence of lattice disorder and strain [19]. Especially, the second-order phonon vibrations 2TO phonon mode appeared at 863 cm −1 in NiO:Nd film.…”

Section: Raman Studiessupporting

confidence: 71%

“…To enhance the optical properties, we need to incorporate the appropriate concentration of trivalent RE ions with larger ionic radii to the host, and this process creates important attributes such as lattice distortion and shielded 4f orbitals. These attributes are known to limit the oxygen vacancies defects [19]. Pérez et al [8] suggested that the incorporation of a higher percentage of trivalent ions creates dense localized states at the forbidden gap, as a consequence the mobility of charge carriers hinders a lot.…”

Section: Introductionmentioning

confidence: 99%

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The effect of rare-earth element (Gd, Nd, La) doping of NiO films on UV photodetector

et al. 2022

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The semiconductor-based UV photodetectors are the most essential devices in the field of space observations, military, DNA sequencing, analysis of protein, medical imaging, checking of atmospheric pollution, optical communications radiation, etc. With such a wide range of possible applications, the nanostructured pristine and rare-earth (RE) doped NiO ((NiO: Gd(1%), NiO:Nd(1%), NiO:La(1%)) thin films were prepared and investigated for their suitability as UV photodetectors. The films were prepared by nebulized spray pyrolysis (NSP) at a substrate temperature of 450 °C. The X-ray diffraction studies confirm the cubic single phase with the polycrystalline nature of the prepared films. The spectroscopic studies such as absorbance and photoluminescence confirm that increase in the optical bandgap and 391 nm PL emission is attributed to the near band edge emission of the NiO. The X-ray photoelectron spectroscopy reveals the presence of nickel and the doped elements with their oxidation states. The UV photodetector performance of the prepared NiO films was carried out under the irradiation of 365 nm light. The NiO:Gd exhibits the best responsivity (0.353 AW-1), external quantum efficiency (120 %), detectivity (1.72×1010 Jones) and rise time (2.0 s), and fall time (2.2 s). Importantly, strategies such as limited doping (1 at.%) and larger ionic radii of Gd incorporation into the host NiO cause a moderate increase in the lattice distortion and inhibit the recombination rate instead of behaving as a recombination center. In addition, the conduction band (CB) electrons are trapped by a greater number of oxygen vacancies residing at the Gd3+ 4f state and cause a good separation of charge carriers. Overall, these modifications enhance the mean lifetime of electrons, consequently reducing the recombination rate and enhancing the photoresponse.

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Section: Raman Studiessupporting

confidence: 89%

Section: Raman Studiessupporting

confidence: 71%