Structural, optical, ac conductivity and dielectric relaxation studies of reactively evaporated In6Se7 thin films

Anuroop, R.; Pradeep, B.

doi:10.1016/j.jallcom.2017.01.190

Cited by 22 publications

(7 citation statements)

References 40 publications

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“…1, curve 2 ) testify to the presence of crystalline In 6 Se 7 inclusions of monoclinic system belonging to the space group P2 1 (standard JCPDS Card No: 24-0070 [35]) in the hexagonal 𝛼-In 2 Se 3 matrix (standard JCPDS Card No: 23-294 [33]). The crystal lattice parameters for In 6 Se 7 are 𝑎 = 9.43 Å, 𝑏 = 4.06 Å, 𝑐 = 17.66 Å, and 𝛽 = 109 ∘ , which agree well with their counterparts given in works [36][37][38]. In this case, the initial crystals can be considered as a heterogeneous mixture of two crystalline phases or a two-phase composite.…”

Section: Experimental Results and Their Discussionsupporting

confidence: 86%

Характеристика наноструктурованих включень In6Se7 у шаруватих кристалах α-In2Se3 аналітичними методами рентгенівської дифрактометрії

et al. 2022

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Методом Брiджмена iз стехiометричного розплаву компонентiв вирощено шаруватi кристали In2Se3, якi, по даним рентгеноструктурного аналiзу, є неоднорiдними: частина зразкiв, отриманих iз одного i того ж зливку, мiстять у собi лише фазу гексагонального α-In2Se3, а в iншiй частинi виявлено включення кристалiчної фази In6Se7. Вкраплення бiльш вузькозонного напiвпровiдника в матрицю α-In2Se3 спричиняють струмову нестабiльнiсть iз Z- i N-подiбними вольт-амперними характеристиками, в той час як однофазнi зразки характеризуються лiнiйними залежностями струму вiд прикладеної напруги. Низка аналiтичних методiв рентгенiвської дифрактометрiї, залучених для встанов лення структури включень In6Se7, засвiдчує в них дiю стискувальних напружень, через яку середнi значення розмiру кристалiтiв In6Se7, визначенi за допомогою модифiкованого методу Шеррера, графiчного розмiрно-деформацiйного методу i методу Холдера–Вагнера з точнiстю, кращою нiж 1%, спiвпадають i становлять 26,5 нм. Обговорюються причини неспiвпадiння середнього розмiру нанокристалiтiв In6Se7, визначеного за методом Вiльямсона–Холла (23,13 нм), iз вищезазначеними розмiрами. За допомогою дифракцiйноадсорбцiйного методу знайдено середню масову частку фази In6Se7 в дослiджуваних зразках α-In2Se3 i, вiдповiдно, розраховано середню концентрацiю нанокристалiтiв In6Se7 iз середнiм розмiром 26,5 нм у шаруватiй α-In2Se3. Вбачається перспективнiсть використання композитних зразкiв In2Se3/In6Se7 для роботи в оптичному телекомунiкацiйному дiапазонi довжин хвиль.

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Section: Experimental Results and Their Discussionsupporting

confidence: 86%

Характеристика наноструктурованих включень In6Se7 у шаруватих кристалах α-In2Se3 аналітичними методами рентгенівської дифрактометрії

et al. 2022

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“…It is seen that bismuth incorporated annealed films showed higher dislocation, strain, and lower crystallite size with respect to In 35 Se 65 film, which is due to an increase in the densification with doping that leads to the formation of smaller grains. Overall, decreasing behavior in the dislocation density inside the crystal is due to the refinement of crystallite size and annihilation of dislocation inside the films which indicates an increase in the crystallinity of the material 38 . The N c decreased with annealing temperature may be due to the change in structure or formation of smaller crystallites 39 .…”

Section: Resultsmentioning

confidence: 97%

Observation of high nonlinearity in Bi doped BixIn35-xSe65 thin films with annealing

Priyadarshini¹,

Das²,

Alagarasan

et al. 2021

Sci Rep

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The present work demonstrates the impact of thermal annealing on the structural, linear, and non-linear optical characteristics of thermally evaporated BixIn35-xSe65 (x = 0, 5, 10, 15 at%) thin films. The prominent crystalline phases have been developed for all annealed films at 450 °C whereas the films remain amorphous at 350 °C annealing. The XRD and Raman analysis showed the phase transformation of Bi-doped films and new Bi2Se3 phases developed upon annealing at 450 °C. The phase transformation induced change increased the linear and nonlinear properties with great extent as seen from the UV–visible optical studies. The direct and indirect optical bandgaps decreased with annealing temperature and also with Bi % content due to the formation of surface dangling bonds near the crystallite sites. The static linear refractive index and high-frequency dielectric constants were increased with annealing. The third-order non-linear susceptibility and non-linear refractive index were found to be greatly influenced by annealing temperature and increased with bismuth content. The FESEM micrographs also showed the phase transformation and EDX analysis showed the composition. The results obtained from the materials showed the potentiality to be useful for photovoltaic and optoelectronic applications.

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“…As temperature increases, R decreases because the prepared Cd 0.8 Sn 0.2 S thin film is semiconducting. This leads to the increase in capacitance C …”

Section: Resultsmentioning

confidence: 99%

AC conductivity and dielectric studies of Cd_0.8Sn_0.2S thin films

Amroun

Khadraoui

2019

Int J Numerical Modelling

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Thin films of Cd 0.8 Sn 0.2 S were prepared by spray pyrolysis method. The Dc and Ac electrical conduction of Cd 0.8 Sn 0.2 S thin films was investigated in this work. Ac conductivity study of the prepared sample is reported in the frequency range 5 Hz to 13 MHz at various temperatures (300-343 K) using impedance spectroscopy. The Cole-Cole plot shows a single semicircle, indicating an equivalent circuit with a single parallel resistor R and capacitance C. Ac conductivity Ac(ω) is found to be proportional to ω s where s < 1. The value of s tends to decrease depending on the temperature. The temperature dependence of both the Ac conductivity and the parameter s is interpreted by the correlated barrier hopping (CBH) model. The temperature-dependent Dc conductivity and the relaxation frequency are found to obey the Arrhenius law having activation energy of 0.17 eV. The density of states at Fermi level is calculated and is of the order of 10 15 eV −1 ·cm −3 . Dielectric constant ε′ and dielectric loss ε″ were found to decrease with frequency and increase with temperature in the investigated ranges.

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Structural, optical, ac conductivity and dielectric relaxation studies of reactively evaporated In6Se7 thin films

Cited by 22 publications

References 40 publications

Характеристика наноструктурованих включень In6Se7 у шаруватих кристалах α-In2Se3 аналітичними методами рентгенівської дифрактометрії

Характеристика наноструктурованих включень In6Se7 у шаруватих кристалах α-In2Se3 аналітичними методами рентгенівської дифрактометрії

Observation of high nonlinearity in Bi doped BixIn35-xSe65 thin films with annealing

AC conductivity and dielectric studies of Cd_0.8Sn_0.2S thin films

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Structural, optical, ac conductivity and dielectric relaxation studies of reactively evaporated In6Se7 thin films

Cited by 22 publications

References 40 publications

Характеристика наноструктурованих включень In6Se7 у шаруватих кристалах α-In2Se3 аналітичними методами рентгенівської дифрактометрії

Характеристика наноструктурованих включень In6Se7 у шаруватих кристалах α-In2Se3 аналітичними методами рентгенівської дифрактометрії

Observation of high nonlinearity in Bi doped BixIn35-xSe65 thin films with annealing

AC conductivity and dielectric studies of Cd0.8Sn0.2S thin films

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AC conductivity and dielectric studies of Cd_0.8Sn_0.2S thin films