Structural morphology and electrical transitions of V2O3 thin films grown on SiO2/Si by high power impulse ma

Effect of VN buffer layer on the magnetic anisotropy of epitaxial Ni80Fe20thin films deposited on MgO (001) substrates

“…X-ray reflectivity (XRR) and x-ray diffraction (XRD) measurements along with pole scans were performed using a Panalytical X'pert diffractometer (CuKα, 0.15406 nm). A detailed description of our x-ray diffraction analysis is provided in our previous works [4], [15]. An atomic force microscope (AFM), from Park System (PSIA XE-100) was utilized for surface analysis.…”

“…3, revealing the formation of 3D nanostructures). For Py on MgO/VN it can be seen that with increase in N content, and consequent reduction in compressive strain, the grain size increases to compensate for strain relaxation [15]. This results in the initial cubic anisotropy evolving into isotropic behavior.…”

Reversible exchange bias in epitaxial V2O3/Ni hybrid magnetic heterostructures

“…A detailed discussion of the fully strained component can be found elsewhere [16,22]. Ex situ atomic force microscopy (AFM) of the top V 2 O 3 interface was conducted by depositing a series of V 2 O 3 films, without depositing the subsequent Ni and capping Zr layers, with results presented in [23,24]. The RMS roughness of the films, determined from the AFM scans, was between 0.2-0.5 nm in agreement with values for the buried interface derived from the XRR and PNR fits described further below.…”