Structural, morphological, dielectric and magnetic properties of Zn‐Zr co‐doping yttrium iron garnet

Abstract

In this study, yttrium iron garnet co‐doped with Zn and Zr atoms with a chemical formula Y3ZnxZrxFe(5−2x)O12 (x = 0.0‐0.3) has been successfully prepared by the solid‐state reaction method. The effects of doping concentration on the microstructure, crystal structure, magnetic properties, and dielectric properties of Y3ZnxZrxFe(5−2x)O12 were investigated. The microstructure analysis indicates that co‐doping of YIG with Zn and Zr can effectively reduce the grain size of the ceramic. The crystal structure results reveal that the doping concentration of Zn–Zr has substantial influence on the lattice parameters of YIG, such as, increases the lattice constant, crystal cell size, and interplanar spacing. However, the second phase of ZrO2 appears once x ≥ 0.15. Additionally, the dielectric properties of YIG ferrite can be regulated using this Zn–Zr co‐doping method. Zn–Zr co‐doping can improve the dielectric stability and reduce the dielectric loss at high temperature. The magnetization measurement shows that the saturation magnetization is stabilized at x < 0.15, and the magnetic loss is decreased with the increase in the doping concentration. Overall, the findings show that the ceramic with x = 0.1 exhibits better properties included high saturation magnetization (24.607 emu/g), low magnetic loss (0.0025 @ 1 MHz), and relatively low dielectric loss (496 @ 400°C).

High-Endurance Ferroelectric (La, Y) and (La, Gd) Co-Doped Hafnium Zirconate Grown by Atomic Layer Deposition

“…Similar observations were made by Chernikova et al 64 on La-doped HZO grown on Ru, where a faster wake-up was observed when the grains favored an o(002) orientation. 65 To summarize, the prolonged wake-up observed in thinner (∼9.5 nm) films up to ∼1 × 10 6 -1 × 10 7 cycles could be caused by a corroboration of several factors: a stronger pinning effect due to the larger amount of grain boundaries at a smaller grain size, 42,66 more grains containing unfavorable orientation of ferroelectric domains with a gradual substitution of La by Y, and a higher density of oxygen vacancies that requires more switching cycles for their redistribution. A completion of the wake-up stage is indicated by a plateau in 2Pr values between ∼1 × 10 7 and ∼1 × 10 9 cycles in the case of (Y, La) co-doped HZO and Y-doped HZO.…”

“…Reduction of monoclinic phase formation with the increase of tetragonal and cubic phases in a binary system of zirconia doped with trivalent Y 3+ , Sr 3+ , and Yb 3+ ions has been previously reported . Very low doping levels (less than ∼1–2%) were shown to trigger remarkable responses in complex oxides such as the reduction of dielectric loss and inhibition of the grain growth. , Doping HZO with a combination of two dopants from the group III dopants has not been investigated so far. In this paper, we demonstrate that stoichiometric hafnium zirconate (Hf 0.5 Zr 0.5 O 2 ) co-doped with lanthanides and/or rare earth elements can induce fatigue-free endurance of at least 1 × 10 11 cycles.…”