Structural, Micro-Structural and Electrical Properties of Rare Earth Doped Bi₄V₂O₁₁Ceramics

Abstract

Rare earth (Nd) doped polycrystalline samples, Bi4V2-xNdxO11 (x = 0.05, 0.10, 0.15 and 0.20), were prepared by using solid–state reaction technique. The physical properties of the samples were studied by X-ray diffraction, FT-IR spectroscopy, scanning electron microscopy (SEM) and AC impedance. The studied samples showed an orthorhombic structure for x = 0.05–0.10 and monoclinic structure for x = 0.15–0.20 through X-ray diffraction (XRD) at room temperature. The nature of Nyquist plot confirmed the presence of contribution of both grain and grain boundary effects and non-Debye type of relaxation process occur for all Nd doped compounds. The frequency dependent ac conductivity followed Jonscher's universal power law. Dimensionless frequency exponent (n) and dispersion parameter (A) were determined by fitting the power law. The nature of variation of dc conductivity suggested the Arrhenius type of electrical conductivity for all the samples. The activation energies were found to be increased with increase in Nd content on vanadium site. The value of dc conductivity is high (0.78 eV) for x = 0.20.

Role of Al and Ti doping in modulating electrical properties of BIVOX system

“…The Nyquist plots are also characterized by depressed type semicircles with center lying below the real axis. This reflects a non-Debye type of relaxation mechanism in these materials [40]. In general, the different regions of the sample can be characterized by means of parallel RC elements [41].…”

Calcination Temperature Dependent Dielectric Properties of Nanocrystalline BaSnO3

“…In the present work, it can be seen that there are broad loss spectra found for all the samples which signifies non-Debye type of relaxation phenomenon. 23 The easy formation of induced dipoles in the presence of the external electric field also decreases the dielectric loss of the B18C sample.…”