2014
DOI: 10.1016/j.apsusc.2014.04.076
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Structural, mechanical and oxidation characteristics of siliconized Ti–Al–X (X=Nb, Ta) alloys

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Cited by 23 publications
(5 citation statements)
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“…Furthermore, alloying elements that can lower the axial c/a ratio of TiAl close to unity may lead to an increase in the number of deformation modes, and consequently with improved ductility [4]. However, alloying with strong beta-stabilising elements such as (Cr, Nb, W and Mo) refine the grain structure and improve high temperature deformation ability as a result of stabilised metastable B2 phase (ordered phase of β at low temperature) [5,6]. However, small additions of silicon enhances high temperature oxidation resistance, in particular the fine coherent Ti 5 Si 3 particles formed during eutectoid reaction along lamellar interfaces intensifies creep resistance [7].…”
Section: Introductionmentioning
confidence: 99%
“…Furthermore, alloying elements that can lower the axial c/a ratio of TiAl close to unity may lead to an increase in the number of deformation modes, and consequently with improved ductility [4]. However, alloying with strong beta-stabilising elements such as (Cr, Nb, W and Mo) refine the grain structure and improve high temperature deformation ability as a result of stabilised metastable B2 phase (ordered phase of β at low temperature) [5,6]. However, small additions of silicon enhances high temperature oxidation resistance, in particular the fine coherent Ti 5 Si 3 particles formed during eutectoid reaction along lamellar interfaces intensifies creep resistance [7].…”
Section: Introductionmentioning
confidence: 99%
“…In the work of Popela et al [ 78 ] samples of Ti-46.6Al, Ti-45.2Al-7.2Nb, and Ti-44.8Al-6.6Ta were examined, which were siliconized in a powder of silicon and subsequently heated at 900, 1000, and 1100 °C for 2 to 12 h [ 78 ]. The kinetics of silicide formation were observed.…”
Section: Properties Of Tial Alloys and Effect Of Silicon On Themmentioning
confidence: 99%
“…The kinetics of silicide formation were observed. The layer grew linearly with time at 900 °C; at 1000 and 1100 °C, the growth was suppressed after the first 2 h of siliconization [ 78 ]. The silicide layers formed at 900 and 1000 °C are composed of TiSi and TiSi 2 sublayers, TiSi crystals with an elongated shape, and at 1100 °C the structure consists of a Ti 5 Si 3 layer with an outer Al 2 O 3 layer.…”
Section: Properties Of Tial Alloys and Effect Of Silicon On Themmentioning
confidence: 99%
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“…Chinese institutes had successfully prepared high-temperature alloy TiAl-3Ta-X(Cr, W), and successfully enhanced the high-temperature oxidation resistance. The research results showed that the alloy formed a square AlTaO4 phase during the oxidation processes, which efficiently prevented spreading O from the surface to the interior, thus inhibiting the oxidation of the alloy [14] .…”
Section: Introductionmentioning
confidence: 99%